NSC LMH6646MA 2.7v, 650î¼a, 55mhz, rail-to-rail input and output amplifiers with shutdown option Datasheet

LMH6645, LMH6646, LMH6647
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SNOS970C – JUNE 2001 – REVISED APRIL 2013
LMH6645/46/47 2.7V, 650μA, 55MHz, Rail-to-Rail Input and Output Amplifiers with
Shutdown Option
Check for Samples: LMH6645, LMH6646, LMH6647
FEATURES
DESCRIPTION
1
(VS = 2.7V, TA = 25°C, RL = 1kΩ to V+/2, AV =
+1. Typical values unless specified).
The LMH™6645 (single) and LMH6646 (dual), rail-torail input and output voltage feedback amplifiers, offer
high speed (55MHz), and low voltage operation
(2.7V) in addition to micro-power shutdown capability
(LMH6647, single).
23
•
•
•
•
•
•
•
•
•
•
−3dB BW 55MHz
Supply Voltage Range 2.5V to 12V
Slew Rate 22V/μs
Supply Current 650μA/channel
Output Short Circuit Current 42mA
Linear Output Current ±20mA
Input Common Mode Voltage 0.3V Beyond
Rails
Output Voltage Swing 20mV from Rails
Input Voltage Noise 17nV/√Hz
Input Current Noise 0.75pA/√Hz
Input common mode voltage range exceeds either
supply by 0.3V, enhancing ease of use in multitude of
applications where previously only inferior devices
could be used. Output voltage range extends to
within 20mV of either supply rails, allowing wide
dynamic range especially in low voltage applications.
Even with low supply current of 650μA/amplifier,
output current capability is kept at a respectable
±20mA for driving heavier loads. Important device
parameters such as BW, Slew Rate and output
current are kept relatively independent of the
operating supply voltage by a combination of process
enhancements and design architecture.
APPLICATIONS
•
•
•
•
•
In portable applications, the LMH6647 provides
shutdown capability while keeping the turn-off current
to less than 50μA. Both turn-on and turn-off
characteristics are well behaved with minimal output
fluctuations during transitions. This allows the part to
be used in power saving mode, as well as
multiplexing applications. Miniature packages (SOT23, VSSOP-8, and SOIC-8) are further means to
ease the adoption of these low power high speed
devices in applications where board area is at a
premium.
Active filters
High speed portable devices
Multiplexing applications (LMH6647)
Current sense buffer
High speed transducer amp
Connection Diagram
5
1
OUTPUT
V
+
6
1
OUTPUT
5
V
-
2
V
-
2
+
+
+IN
3
V
+
SD
-
+IN
-IN
Figure 1. SOT-23-5 (LMH6645)
Package Number DBV0005A
Top View
3
-IN
+IN
4
1
4
-IN
Figure 2. SOT-23-6 (LMH6647)
Package Number DBV0006A
Top View
8
N/C
-
2
3
-
+
4
V
7
6
N/C
+
V
OUTPUT
5
N/C
Figure 3. SOIC-8 (LMH6645)
Package Number D0008A
Top View
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LMH is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2001–2013, Texas Instruments Incorporated
LMH6645, LMH6646, LMH6647
SNOS970C – JUNE 2001 – REVISED APRIL 2013
N/C
1
www.ti.com
8
1
SD
8
+
V
OUT A
A
-IN
2
7
-
+
V
2
-
+
7
-IN A
+IN
3
6
+
OUT B
OUTPUT
3
6
+IN A
-
4
5
V
N/C
+
V
Figure 4. SOIC-8 (LMH6647)
Package Number D0008A
Top View
-
-IN B
B
4
5
+IN B
Figure 5. SOIC-8 and VSSOP-8 (LMH6646)
Package Numbers D0008A and DGK0008A
Top View
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
ESD Tolerance
(1) (2)
Human Body
Machine Model
2KV
(3)
200V
(4)
VIN Differential
±2.5V
See (5), (6)
Output Short Circuit Duration
Supply Voltage (V+ - V−)
12.6V
+
V +0.8V, V −0.8V
Voltage at Input/Output pins
−65°C to +150°C
Storage Temperature Range
Junction Temperature
(7)
+150°C
Soldering Information
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Infrared or Convection (20 sec)
235°C
Wave Soldering (10 sec)
260°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Human body model, 1.5kΩ in series with 100pF.
Machine Model, 0Ω in series with 200pF.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
Operating Ratings
(1)
Supply Voltage (V+ – V−)
Temperature Range
(2)
2
2.5V to 12V
(2)
Package Thermal Resistance
(1)
−
−40°C to +85°C
(2)
(θJA)
SOT-23-5
265°C/W
SOT-23-6
265°C/W
SOIC-8
190°C/W
VSSOP-8
235°C/W
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
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SNOS970C – JUNE 2001 – REVISED APRIL 2013
2.7V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 2.7V, V− = 0V, VCM = VO = V+/2, and Rf = 2kΩ, and RL
= 1kΩ to V+/2. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
40
55
(1)
(2)
BW
−3dB BW
AV = +1, VOUT = 200mVPP,
VCM = 0.7V
en
Input-Referred Voltage Noise
f = 100kHz
17
f = 1kHz
25
in
Input-Referred Current Noise
f = 100kHz
0.75
f = 1kHz
1.20
CT Rej.
Cross-Talk Rejection (LMH6646
only)
f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
SR
Slew Rate
AV = −1, VO = 2VPP
See (3), (4)
TON
Max
(1)
Units
MHz
nV/√Hz
pA/√Hz
47
dB
22
V/μs
Turn-On Time
(LMH6647 only)
250
ns
TOFF
Turn-Off Time
(LMH6647 only)
560
ns
THSD
Shutdown Threshold (LMH6647
only)
15
IS ≤ 50μA
1.95
(5)
2.30
V
−20
μA
ISD
Shutdown Pin Input Current
(LMH6647 only)
See
VOS
Input Offset Voltage
0V ≤ VCM ≤ 2.7V
TC VOS
Input Offset Average Drift
See
IB
Input Bias Current
VCM = 2.5V
(5)
0.40
2
2.2
VCM = 0.5V
(5)
−0.68
−2
−2.2
1
500
−3
−4
(6)
±1
3
4
μV/°C
±5
0V ≤ VCM ≤ 2.7V
mV
μA
IOS
Input Offset Current
RIN
Common Mode Input Resistance
3
MΩ
CIN
Common Mode Input
Capacitance
2
pF
CMVR
Input Common-Mode Voltage
Range
CMRR
CMRR ≥ 50dB
Common Mode Rejection Ratio
−0.5
3.0
2.8
3.2
VCM Stepped from 0V to 2.7V
46
77
VCM Stepped from 0V to 1.55V
58
76
76
74
87
2.55
2.66
AVOL
Large Signal Voltage Gain
VO = 0.35V to 2.35V
VO
Output Swing
High
RL = 1k to V+/2
RL = 10k to V+/2
2.68
Output Swing
Low
RL = 1k to V+/2
40
RL = 10k to V+/2
20
(1)
(2)
(3)
(4)
(5)
(6)
nA
−0.3
−0.1
V
dB
dB
V
150
mV
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Slew rate is the average of the rising and falling slew rates.
Guaranteed based on characterization only.
Positive current corresponds to current flowing into the device.
Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Copyright © 2001–2013, Texas Instruments Incorporated
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2.7V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 2.7V, V− = 0V, VCM = VO = V+/2, and Rf = 2kΩ, and RL
= 1kΩ to V+/2. Boldface limits apply at the temperature extremes.
Symbol
ISC
Parameter
Conditions
Output Short Circuit Current
Min
(1)
Typ
(2)
Sourcing to V−
VID = 200mV (7) (8)
43
Sinking to V+
VID = −200mV
42
(7) (8)
Max
(1)
mA
IOUT
Output Current
VOUT = 0.5V from rails
PSRR
Power Supply Rejection Ratio
V+ = 2.7V to 3.7V or
V− = 0V to −1V
IS
Supply Current (per channel)
Normal Operation
650
1250
Shutdown Mode (LMH6647 only)
15
50
(7)
(8)
75
Units
±20
mA
83
dB
μA
Short circuit test is a momentary test.
Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, and Rf = 2kΩ, and RL =
1kΩ to V+/2. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
40
55
(1)
(2)
BW
−3dB BW
AV = +1, VOUT = 200mVPP
en
Input-Referred Voltage Noise
f = 100kHz
17
f = 1kHz
25
in
Input-Referred Current Noise
f = 100kHz
0.75
f = 1kHz
1.20
CT Rej.
Cross-Talk Rejection
(LMH6646 only)
f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
SR
Slew Rate
AV = −1, VO = 2VPP
See (3), (4)
TON
Turn-On Time (LMH6647 only)
210
TOFF
Turn-Off Time (LMH6647 only)
500
THSD
Shutdown Threshold
(LMH6647 only)
IS ≤ 50μA
ISD
Shutdown Pin Input Current
(LMH6647 only)
See
VOS
Input Offset Voltage
0V ≤ VCM ≤ 5V
Max
(1)
MHz
nV/√Hz
pA/√Hz
47
15
dB
V/μs
22
4.25
Units
ns
ns
4.60
V
(5)
−20
−3
−4
(6)
TC VOS
Input Offset Average Drift
See
IB
Input Bias Current
VCM = 4.8V
(5)
VCM = 0.5V
(5)
±1
μA
3
4
μV/C
±5
0V ≤ VCM ≤ 5V
mV
+0.36
+2
−2.2
−0.68
−2
−2.2
1
500
μA
IOS
Input Offset Current
RIN
Common Mode Input Resistance
3
MΩ
CIN
Common Mode Input
Capacitance
2
pF
(1)
(2)
(3)
(4)
(5)
(6)
4
nA
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Slew rate is the average of the rising and falling slew rates.
Guaranteed based on characterization only.
Positive current corresponds to current flowing into the device.
Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
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LMH6645, LMH6646, LMH6647
www.ti.com
SNOS970C – JUNE 2001 – REVISED APRIL 2013
5V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, and Rf = 2kΩ, and RL =
1kΩ to V+/2. Boldface limits apply at the temperature extremes.
Symbol
CMVR
CMRR
Parameter
Conditions
Min
(1)
CMRR ≥ 50dB
Input Common-Mode Voltage
Range
Common Mode Rejection Ratio
Typ
Max
−0.5
−0.3
−0.1
(2)
5.3
5.1
5.5
VCM Stepped from 0V to 5V
56
82
VCM Stepped from 0V to 3.8V
66
85
76
74
85
4.80
4.95
AVOL
Large Signal Voltage Gain
VO = 1.5V to 3.5V
VO
Output Swing
High
RL = 1k to V+/2
RL = 10k to V+/2
4.98
Output Swing
Low
RL = 1k to V+/2
50
RL = 10k to V /2
20
Output Short Circuit Current
Sourcing to V−
VID = 200mV (7) (8)
55
Sinking to V+
VID = −200mV
53
ISC
+
(1)
V
dB
dB
V
200
mV
mA
(7) (8)
IOUT
Output Current
VOUT = 0.5V From rails
PSRR
Power Supply Rejection Ratio
V+ = 5V to 6V or V− = 0V to −1V
IS
Supply Current (per channel)
Normal Operation
700
1400
Shutdown Mode (LMH6647 only)
10
50
(7)
(8)
Units
75
±20
mA
95
dB
μA
Short circuit test is a momentary test.
Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
±5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO = 0V, Rf = 2kΩ, and RL = 1kΩ
to GND. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
40
55
(1)
(2)
BW
−3dB BW
AV = +1, VOUT = 200mVPP
en
Input-Referred Voltage Noise
f = 100kHz
17
f = 1kHz
25
in
Input-Referred Current Noise
f = 100kHz
0.75
f = 1kHz
1.20
CT Rej.
Cross-Talk Rejection
(LMH6646 only)
f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
SR
Slew Rate
AV = −1, VO = 2VPP (3)
TON
TOFF
THSD
Shutdown Threshold
(LMH6647 only)
IS ≤ 50μA
ISD
Shutdown Pin Input Current
(LMH6647 only)
See
VOS
Input Offset Voltage
−5V ≤ VCM ≤ 5V
TC VOS
(1)
(2)
(3)
(4)
(5)
Max
(1)
Units
MHz
nV/√Hz
pA/√Hz
47
dB
22
V/μs
Turn-On Time (LMH6647 only)
200
ns
Turn-Off Time (LMH6647 only)
700
ns
Input Offset Average Drift
See
15
4.25
(4)
V
4.60
−20
−3
−4
(5)
±1
±5
μA
3
4
mV
μV/°C
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Slew rate is the average of the rising and falling slew rates.
Positive current corresponds to current flowing into the device.
Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Copyright © 2001–2013, Texas Instruments Incorporated
Product Folder Links: LMH6645 LMH6646 LMH6647
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±5V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO = 0V, Rf = 2kΩ, and RL = 1kΩ
to GND. Boldface limits apply at the temperature extremes.
Symbol
IB
Parameter
Conditions
Input Bias Current
VCM = 4.8V
Min
(1)
Typ
Max
+0.40
+2
+2.2
−0.65
−2
−2.2
3
500
(2)
(4)
VCM = −4.5V
(4)
−5V ≤ VCM ≤ 5V
(1)
Units
μA
IOS
Input Offset Current
RIN
Common Mode Input Resistance
3
MΩ
CIN
Common Mode Input
Capacitance
2
pF
CMVR
Input Common-Mode Voltage
Range
CMRR ≥ 50dB
−5.5
5.3
5.1
CMRR
Common Mode Rejection Ratio
5.5
VCM Stepped from −5V to 5V
60
84
VCM Stepped from −5V to 3.5V
66
104
76
74
85
4.70
4.92
AVOL
Large Signal Voltage Gain
VO = −2V to 2V
VO
Output Swing
High
RL = 1kΩ
RL = 10kΩ
4.97
Output Swing
Low
RL = 1kΩ
−4.93
RL = 10kΩ
−4.98
Output Short Circuit Current
Sourcing to V−
VID = 200mV (6) (7)
66
Sinking to V+
VID = −200mV
61
ISC
IOUT
Output Current
dB
dB
V
−4.70
VOUT = 0.5V from rails
−
±20
Power Supply Rejection Ratio
V = 5V to 6V or V = −5V to −6V
IS
Supply Current (per channel)
Normal Operation
725
1600
Shutdown Mode (LMH6647 only)
10
50
6
V
mA
PSRR
(6)
(7)
V
mA
(6) (7)
+
−5.3
−5.1
nA
76
95
dB
μA
Short circuit test is a momentary test.
Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
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SNOS970C – JUNE 2001 – REVISED APRIL 2013
Typical Performance Characteristics
At TJ = 25°C. Unless otherwise specified.
Closed Loop Frequency Response for Various Temperature
GAIN
Frequency Response for Various AV
AV = +1
0
25°C
50
AV = +1
GAIN (dB)
0
PHASE
PHASE (°)
-4
0
PHASE
50
100
100
-40°C
VS = ±2.5V
AV = +5
VS = ±5V
RL = 1K
RL = 1k:
VOUT = 200mVPP
100k
AV = +10
-4
1M
1M
10M
FREQUENCY (Hz)
100k
100M 200M
10M
FREQUENCY (Hz)
Figure 6.
200M
Figure 7.
Open Loop Gain/Phase vs. Frequency for Various
Temperature
THD vs. Output Swing
70
-50
RL = 500:
f = 100KHz
60
PHASE
50
-55
100
40
80
GAIN
20
60
40
-40°C
20
10
0
AV = +2
-60
THD (dBc)
85°C
85°C
30
PHASE (°)
GAIN (dB)
PHASE (°)
-2
-2
GAIN (dB)
AV = +2
GAIN
85°C
0
-65
VS = ±2.5V
VS = ±5V
-70
0
-40°C
-20
VS = ±2.5V
-75
RL = 2k
100k
1M
10M
-80
100M
1
3
2
FREQUENCY (Hz)
Figure 8.
6
7
8
Figure 9.
THD vs. Output Swing
Output Swing vs. Frequency
-30
10
RL = 500:
f = 1MHz
-35
4
5
VOUT (VPP)
AV = +2
-45
VOUT (VPP)
THD (dBc)
-40
-50
-55
VS = ±5V
VS = ±2.5V
1
RL = 500:
-60
AV = +2
65
Rf = Rg = 2K
VS = ±5V
-70
1
2
3
4
VOUT (VPP)
5
6
0.1
100k
Figure 10.
1M
10M
FREQUENCY (Hz)
Figure 11.
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Typical Performance Characteristics (continued)
At TJ = 25°C. Unless otherwise specified.
Settling Time vs. Step Size
Noise vs. Frequency
250
10.00
1000
±0.1%
100
VS = ±2.5V
Hz)
CURRENT
1.00
100
in (pA/
150
en (nV/ Hz)
SETTLING TIME (ns)
200
RL = 500:
50
VOLTAGE
CL = 13pF
±1%
AV = -1
0
0
1
2
3
10
10
4
100
STEP AMPLITUDE (VPP)
10
FREQUENCY (Hz)
Figure 12.
Figure 13.
VOUT from V+ vs. ISOURCE
VOUT from V−
vs.
ISINK
40°C
VS = 10V
10 VS = 10V
85°C
40°C
85°C
VOUT FROM V (V)
+
1.0
-
VOUT FROM V (V)
0.10
100k
10k
1k
0.1
85°C
1.0
0.1
85°C
25°C
40°C
0.01
.01
.1
-40°C
1
10
ISOURCE (mA)
0.01
.01
100
Figure 15.
Output Swing from V+ vs. RL (tied to VS/2)
Output Swing from V+ vs. RL (tied to VS/2)
10k
10k
T = -40°C
AV = +1
AV = +1
VOUT FROM V (mV)
T = 25°C
1k
1k
+
+
VOUT FROM V (mV)
100
ISINK (mA)
Figure 14.
10V
5V
100
1
0
0
10V
5V
100
2.7V
2.7V
10
500
1k
1.5k
RL (:)
2k
2.5k
0
500
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1k
1.5k
2k
2.5
k
RL (:)
Figure 16.
8
10
1
.1
Figure 17.
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SNOS970C – JUNE 2001 – REVISED APRIL 2013
Typical Performance Characteristics (continued)
At TJ = 25°C. Unless otherwise specified.
Output Swing from V− vs. RL (tied to VS/2)
Output Swing from V+ vs. RL (tied to VS/2)
10k
T = 25°C
AV = +1
AV = +1
VOUT FROM V (mV)
T = 85°C
1k
1k
-
+
VOUT FROM V (mV)
10k
10V
5V
100
10V
5V
100
2.7V
2.7V
10
10
0
1.5k
1k
500
2k
500
0
2.5k
1k
Figure 18.
Output Swing from V− vs. RL (tied to VS/2)
2.5k
Output Swing from V− vs. RL (tied to VS/2)
10k
T = 85°C
AV = +1
AV = +1
VOUT FROM V (mV)
T = -40°C
1k
-
1k
-
VOUT FROM V (mV)
2k
Figure 19.
10k
10V
5V
100
2.7V
10
0
500
1k
1.5k
RL (:)
2k
10V
5V
100
1
00
25k
2.7V
500
1k
Figure 20.
10k
2.5k
ZOUT vs. Frequency
100
100
CL
10
10
1
4
3
2
CLOSED LOOP GAIN
1
5
VS = ±2.5V
100 AV = +1
ZOUT (:)
1k
ts
ts (± 1% SETTLING WITH CL) (ns)
200mVPP STEP
30% OVERSHOOT
1
2k
500
10k
VS = +5V
1k
1.5k
RL (:)
Figure 21.
Cap Load Tolerance and Setting Time vs. Closed Loop Gain
CL (pF)
1.5k
RL (:)
RL (:)
10
1.0
0.1
0.02
10k
1M
10M
100k
FREQUENCY (Hz)
Figure 22.
200M
Figure 23.
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Typical Performance Characteristics (continued)
At TJ = 25°C. Unless otherwise specified.
PSRR vs. Frequency
CMRR vs. Frequency
110
90
+PSRR
100
VS = ±2.5V
90
VS = 5V
RF = 10k:
80
RG = 1k:
70
CMRR (dB)
PSRR (dB)
80
70
-PSRR
60
50
60
50
40
40
30
30
20
20
10
100
10k
1M
100k
FREQUENCY (Hz)
1k
10
1k
10M
100k
10k
Figure 24.
Figure 25.
Crosstalk Rejection vs. Frequency (Output to Output)
(LMH6646)
VOS Distribution
100
RELATIVE FREQUENCY (%)
90
CT (rej) (dB)
80
70
60
50
40
Receive CH.: AV = +2, Rf = Rg = 510
30
1k
10k
10M
1M
FREQUENCY (Hz)
100k
1M
14
13 VS = ±5V
12
11
10
9
8
7
6
5
4
3
2
1
0
-3.5 -2.5 -1.5
x
x
xxxx
x
10M
N = 19k UNITS
V = 0.46mV
x
x
-0.5
0.5
x
1.5
2.5
3.5
VOS (mV)
FREQUENCY (Hz)
Figure 26.
Figure 27.
VOSvs. VS (A Typical Unit)
VOS vs. VOUT (A Typical Unit)
0.25
0.2
-40°C
0.15
0.1
-40°C
0.05
25°C
25°C
VOS (mV)
VOS (mV)
0.05
0.2
0.1
5
0.1
0
-0.05
-0.1
-0.15
85°C
-0.2
-0.25
VCM = 0.5V
-0.3
1
2
3
4
5
6
7
VS (V)
8
9 10 11 12
0
85°
C
-0.05
0.1
-0.15
VS = 10V
0.2 RL = 10k: to VS/2
-0.25
0
-2
6
2
4
VOUT (V)
Figure 28.
10
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8
10
12
Figure 29.
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Typical Performance Characteristics (continued)
At TJ = 25°C. Unless otherwise specified.
VOS vs. VOUT (A Typical Unit)
VOS vs. VCM (A Typical Unit)
0.6
0.4
VS = 2.7V
0.3
40°C
0.5
-40°C
0.2
25°C
0.1
VOS (mV)
VOS (mV)
0.4
25°C
0
85°
C
-0.1
0.
3
0.2
85°C
-0.2
-0.3
0.4 2
0.1
VS = 10V
RL = 1k: to VS/2
0
4
2
6
8
10
0
-0.5
12
0.5
1.5
1
VCM (V)
Figure 30.
Figure 31.
VOS vs. VCM (A Typical Unit)
2
2.5
0.6
VS = 10V
VS = 5V
0.5
0.4
0.4
VOS (mV)
0.5
-40°C
0.3
0.2
0.
3
-40°C
0.2
25°C
0.1
0.1
0
25°C
0
85°C
-0.1
-1
2
1
0
3
4
0.1
-2
6
5
85°C
0
4
2
VCM (V)
6
8
10
12
VCM (V)
Figure 32.
Figure 33.
IB vs. VCM
IB vs. VCM
0.6
0.6
85°C
VS = 2.7V
85°C
VS = ±5V
0.4
0.4
25°C
25°C
0.2
0.2
-40°C
-40°C
0
-0.2
IB (µA)
0
IB (µA)
3
VOS vs. VCM (A Typical Unit)
0.6
VOS (mV)
0
VOUT (V)
-40°C
25°C
-0.2
-0.4
-0.4
-0.6
-0.6
40°C
25°C
85°C
-0.8
-0.8
85°C
-1
-0.5
-1
0
0.5
1
1.5
2
2.5
3
5
VCM (V)
Figure 34.
3
1
-1
VCM (V)
3
5
Figure 35.
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Typical Performance Characteristics (continued)
At TJ = 25°C. Unless otherwise specified.
IB vs. VS
-0.50
-0.52
VCM = 0.2V
85°C
0.9
-0.54
IS (mA) (per channel)
IB (µA)
VS = ±5V
85°C
0.85
-0.56
-0.58
25°C
-0.60
-0.62
-0.64
-0.66
0.8
0.75
25°C
0.7
0.65
0.6
0.55
-40°C
-0.68
-0.7
IS vs. VCM
0.95
-40°C
0.5
1
3
2
4
6
5
7
0.45
9 10 11 12
8
-7
-5
VS (V)
IS (mA)
IS (mA) (per channel)
0.7
0.45
0.
41
25°C
-40°C
3
4
5
6
7
8
0.9
0.
8
0.
7
0.6
0.
5
0.
4
0.
3
0.2
25°C
-40°C
0
0.1
-0.15 0.35
9 10 11 12
VS (V)
Figure 38.
IS vs. VSHUTDOWN (LMH6647)
85°C
0.
9
0.
8
0.
7
0.6
VS = 5V
0.8
25°C
IS (mA)
IS (mA)
0.7
-40°C
0.3
0.2
0.1
0
-0.1
-0.5
0.5
3.5
1.5
2.5
VSHUTDOWN (V)
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2.35
2.85
4.5
5.5
IS vs. VSHUTDOWN (LMH6647)
85°C
25°C
0.5
0.4
-40°C
0.3
0.2
0.
1
0
VS = ±5V
0.1
-6
4
Figure 40.
12
0.85 1.35 1.85
VSHUTDOWN (V)
Figure 39.
0.9
0.6
0.
5
0.4
VS = 2.7V
85°C
0.1
VS = ±5V
VCM = 0.2V
2
7
5
3
IS vs. VSHUTDOWN (LMH6647)
85°C
0.5
1
Figure 37.
IS (mA) vs. Vs(V)
0.65
0.
6
0.55
-1
VCM (V)
Figure 36.
0.
9
0.85
0.
8
0.75
-3
2
0
2
VSHUTDOWN (V)
4
6
Figure 41.
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SNOS970C – JUNE 2001 – REVISED APRIL 2013
Typical Performance Characteristics (continued)
At TJ = 25°C. Unless otherwise specified.
Shutdown Pin and Supply Current vs. Shutdown Voltage
1000
Small Signal Step Response
-100
85°C
-40°C
IVCC (µA)
100
-10
IVCC
1
0
SHUTDOWN
PIN CURRENT
-1
85°C
ISHUTDOWN PIN (P$)
25°C
VS = ±5V
RL = 1k:
AV = +1
-40°C
VS = ±2.5V
1
1.5
-3.5 -2.5 -1.5 -0.5 0.5
VSHUTDOWN (V)
VOUT = 0.2VPP
25°C
2.5
-0.1
3.5
40 mV/
DIV
20 ns/DIV
Figure 42.
Figure 43.
Large Signal Step Response
Large Signal Step Response
VS = 2.7V, RL = 1k:
VS = 5V
VOUT = 1VPP, AV = +1
RL = 1k:
VOUT = 1VPP
AV = -1
0.2 V/DIV
Figure 44.
40 ns/
DIV
40 ns/DIV
0.2 V/DIV
Figure 45.
Output Overload Recovery
INPUT
OUTPUT
VS = ±2.5V, AV = +2
RL = 1k: RF = RG = 2k:
1 V/DIV
400 ns/DIV
Figure 46.
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APPLICATION NOTES
CIRCUIT DESCRIPTION
The LMH6645/6646/6647 family is based on proprietary VIP10 dielectrically isolated bipolar process.
This device family architecture features the following:
• Complimentary bipolar devices with exceptionally high ft (∼8GHz) even under low supply voltage (2.7V) and
low Collector bias current.
• Rail-to-Rail input which allows the input common mode voltage to go beyond either rail by about 0.5V
typically.
• A class A-B “turn-around” stage with improved noise, offset, and reduced power dissipation compared to
similar speed devices (patent pending).
• Common Emitter push-pull output stage capable of 20mA output current (at 0.5V from the supply rails) while
consuming only ∼700μA of total supply current per channel. This architecture allows output to reach within
milli-volts of either supply rail at light loads.
• Consistent performance from any supply voltage (2.7V-10V) with little variation with supply voltage for the
most important specifications (e.g. BW, SR, IOUT, etc.)
APPLICATION HINTS
The total input common mode voltage range, which extends from below V− to beyond V+, is covered by both a
PNP and a NPN stage. The NPN stage is switched on whenever the input is less than 1.2V from V+ and the PNP
stage covers the rest of the range. In terms of the input voltage, there is an overlapping region where both
stages are processing the input signal. This region is about 0.5V from beginning to the end. As far as the device
application is concerned, this transition is a transparent operation. However, keep in mind that the input bias
current value and direction will depend on which input stage is operating (see Figure 34, 35, and 36 for plots).
For low distortion applications, it is best to keep the input common mode voltage from transversing this transition
point. Low gain settling applications, which generally encounter larger peak-to-peak input voltages, could be
configured as inverting stages to eliminate common mode voltage fluctuations.
In terms of the output, when the output swing approaches either supply rail, the output transistor will enter a
Quasi-saturated state. A subtle effect of this operational region is that there is an increase in supply current in
this state (up to 1mA). The onset of Quasi-saturation region is a function of output loading (current) and varies
from 100mV at no load to about 1V when output is delivering 20mA, as measured from supplies. Both input
common mode voltage and output voltage level effect the supply current (see Figure 37 and 38. for plot).
With 2.7V supplies and a common mode input voltage range that extends beyond either supply rail, the
LMH6645/6646/6647 family is well suited to many low voltage/low power applications. Even with 2.7V supplies,
the −3dB BW (@ AV = +1) is typically 55MHz with a tested limit of 45MHz. Production testing guarantees that
process variations will not compromise speed.
This device family is designed to avoid output phase reversal. With input over-drive, the output is kept near the
supply rail (or as close to it as mandated by the closed loop gain setting and the input voltage). Figure 47, below,
shows the input and output voltage when the input voltage significantly exceeds the supply voltages:
INPUT
OUTPUT
VS = ±2.5V, RL = 10k: AV = +1
2 V/DIV
10.0 µs/DIV
Figure 47. Input/Output Shown with Exceeded Input CMVR
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As can be seen, the output does not exhibit any phase reversal as some op amps do. However, if the input
voltage range is exceeded by more than a diode drop beyond either rail, the internal ESD protection diodes will
start to conduct. The current flow in these ESD diodes should be externally limited.
LMH6647
MICRO-POWER SHUTDOWN
The LMH6647 can be shutdown to save power and reduce its supply current to less than 50μA guaranteed, by
applying a voltage to the SD pin. The SD pin is “active high” and needs to be tied to V− for normal operation. This
input is low current (<20μA, 4pF equivalent capacitance) and a resistor to V− (≤20kΩ) will result in normal
operation. Shutdown is guaranteed when SD pin is 0.4V or less from V+ at any operating supply voltage and
temperature.
In the shutdown mode, essentially all internal device biasing is turned off in order to minimize supply current flow
and the output goes into Hi-Z (high impedance) mode. Complete device Turn-on and Turn-off times vary
considerably relative to the output loading conditions, output voltage, and input impedance, but is generally
limited to less than 1μs (see tables for actual data).
During shutdown, the input stage has an equivalent circuit as shown below in Figure 48.
INVERTING
INPUT
RS
200-400:
D4
D1
D3
D2
NON-INVERTING
INPUT
Figure 48. LMH6647 Equivalent Input in Shutdown Mode
As can be seen above, in shutdown, there may be current flow through the internal diodes shown, caused by
input potential, if present. This current may flow through the external feedback resistor and result in an apparent
output signal. In most shutdown applications the presence of this output is inconsequential. However, if the
output is “forced” by another device such as in a multiplexer, the other device will need to conduct the current
described in order to maintain the output potential.
To keep the output at or near ground during shutdown when there is no other device to hold the output low, a
switch (transistor) could be used to shunt the output to ground. Figure 49 shows a circuit where a NPN bipolar is
used to keep the output near ground (∼80mV):
5V
-
VOUT
LMH6647
VIN
+
SD
V
SHUTDOWN
INPUT
-
Q1
RS
10k
Figure 49. Active Pull-Down Schematic
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Figure 50 shows the output waveform.
VOUT
VS = 5V
AV = +1
VIN = 3.5VPP
SD
2.00 µs/DIV
2 V/DIV
Figure 50. Output Held Low by Active Pull-Down Circuit
If bipolar transistor power dissipation is not tolerable, the switch could be by a N-channel enhancement mode
MOSFET.
2.7V SINGLE SUPPLY RRIO 2:1 MUX
The schematic show in Figure 51 will function as a 2:1 MUX operating on a single 2.7V power supply, by utilizing
the shutdown feature of the LMH6647:
1/5
74HC04
1/5
74HC04
SELECT
INPUT
2k
2k
2.7V
-
SHUTDOWN
LMH6647
+
INPUT A
RL
2.7V
SHUTDOWN
+
INPUT B
LMH664
7
-
2k
2k
Figure 51. 2:1 MUX Operating off a 2.7V Single Supply
Figure 52 shows the MUX output when selecting between a 1MHz sine and a 250KHz triangular waveform.
16
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SNOS970C – JUNE 2001 – REVISED APRIL 2013
VOUT
SELECT
1 V/DIV
1 µs/DIV
Figure 52. 2:1 MUX Output
As can be seen in Figure 52, the output is well behaved and there are no spikes or glitches due to the switching.
Switching times are approximately around 500ns based on the time when the output is considered “valid”.
PRINTED CIRCUIT BOARD LAYOUT, COMPONENT VALUES SELECTION, AND EVALUATION
BOARDS
Generally, a good high-frequency layout will keep power supply and ground traces away from the inverting input
and output pins. Parasitic capacitances on these nodes to ground will cause frequency response peaking and
possible circuit oscillations (see Application Note OA-15 for more information).
Another important parameter in working with high speed/high performance amplifiers, is the component values
selection. Choosing large valued external resistors, will effect the closed loop behavior of the stage because of
the interaction of these resistors with parasitic capacitances. These capacitors could be inherent to the device or
a by-product of the board layout and component placement. Either way, keeping the resistor values lower, will
diminish this interaction. On the other hand, choosing very low value resistors could load down nodes and will
contribute to higher overall power dissipation.
National Semiconductor suggests the following evaluation boards as a guide for high frequency layout and as an
aid in device testing and characterization:
Device
Package
Evaluation Board PN
LMH6645MF
SOT-23-5
CLC730068
LMH6645MA
8-Pin SOIC
CLC730027
LMH6646MA
8-Pin SOIC
CLC730036
LMH6646MM
8-Pin VSSOP
CLC730123
LMH6647MA
8-Pin SOIC
CLC730027
LMH6647MF
SOT-23-6
CLC730116
These free evaluation boards are shipped when a device sample request is placed with National Semiconductor.
LMH6647 Evaluation
For normal operation, tie the SD pin to V−.
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REVISION HISTORY
Changes from Revision B (April 2013) to Revision C
•
18
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 17
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PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMH6645MA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
45MA
LMH6645MAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
45MA
LMH6645MF
NRND
SOT-23
DBV
5
1000
TBD
Call TI
Call TI
-40 to 85
A68A
LMH6645MF/NOPB
ACTIVE
SOT-23
DBV
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
A68A
LMH6645MFX
NRND
SOT-23
DBV
5
3000
TBD
Call TI
Call TI
-40 to 85
A68A
LMH6645MFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
A68A
LMH6646MA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
46MA
LMH6646MAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
46MA
LMH6646MM
NRND
VSSOP
DGK
8
1000
TBD
Call TI
Call TI
-40 to 85
A70A
LMH6646MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
A70A
LMH6646MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
A70A
LMH6647MA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
47MA
LMH6647MAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
47MA
LMH6647MF
NRND
SOT-23
DBV
6
1000
TBD
Call TI
Call TI
-40 to 85
A69A
LMH6647MF/NOPB
ACTIVE
SOT-23
DBV
6
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
A69A
LMH6647MFX/NOPB
ACTIVE
SOT-23
DBV
6
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
A69A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LMH6645MAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LMH6645MF
SOT-23
DBV
5
1000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LMH6645MFX
SOT-23
DBV
5
3000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LMH6646MAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LMH6647MAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LMH6647MF
SOT-23
DBV
6
1000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LMH6647MF/NOPB
SOT-23
DBV
6
1000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LMH6647MFX/NOPB
SOT-23
DBV
6
3000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMH6645MAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LMH6645MF
SOT-23
DBV
5
1000
210.0
185.0
35.0
LMH6645MFX
SOT-23
DBV
5
3000
210.0
185.0
35.0
LMH6646MAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LMH6647MAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LMH6647MF
SOT-23
DBV
6
1000
210.0
185.0
35.0
LMH6647MF/NOPB
SOT-23
DBV
6
1000
210.0
185.0
35.0
LMH6647MFX/NOPB
SOT-23
DBV
6
3000
210.0
185.0
35.0
Pack Materials-Page 2
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