Rohm IMT3A General purpose (dual transistors) Datasheet

EMT3 / IMT3A
Transistors
General purpose (dual transistors)
EMT3 / IMT3A
zExternal dimensions (Unit : mm)
zFeatures
1) Two 2SA1037AK chips in a EMT or SMT package.
0.22
zEquivalent circuits
EMT3
(2)
(1)
(4)
(4)
(6)
(5)
(3)
(5)
(6)
(2)
1.2
1.6
(1)
Tr2
(4)
Tr2
Tr1
(5)
(6)
(3)
0.5
0.13
(3)
IMT3A
0.5 0.5
1.0
1.6
EMT3
Tr1
(2)
(1)
Each lead has same dimensions
ROHM : EMT6
V
(5)
Collector-emitter voltage
VCEO
−50
V
(4)
Emitter-base voltage
VEBO
−6
V
IC
−150
mA
300(TOTAL)
IMT3A
Junction temperature
Storage temperature
Tj
150
°C
Tstg
−55 to +150
°C
(2)
(3)
2.8
∗1
∗2
0.3Min.
1.1
mW
0.8
150(TOTAL)
PC
0~0.1
EMT3
Collector power
dissipation
1.6
0.15
Collector current
(1)
Unit
−60
(6)
Limits
VCBO
Parameter
0.3
Symbol
Collector-base voltage
0.95 0.95
1.9
2.9
IMT3A
zAbsolute maximum ratings (Ta=25°C)
Each lead has same dimensions
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
ROHM : SMT6
EIAJ : SC-74
zPackage, marking, and packaging specifications
Type
EMT3
IMT3A
Package
EMT6
SMT6
Marking
Code
T3
T2R
T108
8000
3000
Basic ordering unit (pieces)
T3
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
−60
−
−
V
IC=−50µA
Conditions
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC=−1mA
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
ICBO
−6
−
−
−
−
−0.1
V
µA
IE=−50µA
VCB=−60V
VEB=−6V
IEBO
−
−
−0.1
µA
VCE(sat)
−
−
−0.5
V
IC/IB=−50mA/−5mA
hFE
120
−
560
−
VCE=−6V, IC=−1mA
Transition frequency
fT
−
140
−
MHz
Output capacitance
Cob
−
4
5
pF
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
VCE=−12V, IE=2mA, f=100MHz
∗
VCE=−12V, IE=0A, f=1MHz
∗Transition frequency of the device.
Rev.A
1/2
EMT3 / IMT3A
Transistors
zElectrical characteristics curves
−5
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−24.5
−21.0
−6
−17.5
−14.0
−4
−10.5
−7.0
−2
−3.5µA
−0.4
−0.8
−1.2
DC CURRENT GAIN : hFE
25˚C
200
100
−40˚C
100
50
50
−250
−150
−40
−100
−20
−50µA
IB=0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
−1
Ta=25˚C
−0.5
−0.2
IC/IB=50
−0.1
20
10
−0.05
−2
−5 −10 −20
−0.2 −0.5 −1
−50 −100
1000
TRANSITION FREQUENCY : fT (MHz)
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
−0.05
−0.2
−0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
500
200
100
50
0.5
1
2
5
10
20
50
−5 −10 −20
−50 −100
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
Ta=25˚C
VCE= −12V
lC/lB=10
−2
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (II)
Fig.4 DC current gain vs.
collector current (I)
−0.5
−0.2 −0.5 −1
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
−1
VCE= −6V
−5 −10 −20 −50 −100
−2
100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
−0.2 −0.5 −1
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−500
−450
−400
−350
−300
Fig.3 Grounded emitter output
characteristics (II)
Ta=100˚C
200
Ta=25˚C
−200
Fig.2 Grounded emitter output
characteristics (I)
VCE= −5V
−3V
−1V
Ta=25˚C
−60
IB=0
−1.6
−2.0
500
500
−80
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
characteristics
DC CURRENT GAIN : hFE
−28.0
−8
0
BASE TO EMITTER VOLTAGE : VBE (V)
−100
−31.5
COLLECTOR CURRENT : IC (mA)
−10
−35.0
Ta=25˚C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−20
−10
VCE= −6V
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
−50
20
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cib
10
Co
b
5
2
−0.5
−1
−2
−5
−10
−20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
Rev.A
2/2
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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