MGSF2N02EL Preferred Device Power MOSFET 2.8 Amps, 20 Volts, N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. http://onsemi.com Features • • • • 2.8 A, 20 V RDS(on) = 85 m (max) Pb−Free Packages are Available Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space IDSS Specified at Elevated Temperature N−Channel D Applications • DC−DC Converters • Power Management in Portable and Battery Powered Products, ie: G Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 8.0 Vdc ID Rating Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 s) IDM 2.8 5.0 Total Power Dissipation @ TA = 25°C PD 1.25 W Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance Junction−to−Ambient (Note 1) Thermal Resistance Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds MARKING DIAGRAM A 3 °C/W RJA 100 SOT−23 CASE 318 STYLE 21 1 NT M 2 NT M = Device Code = Date Code 300 TL °C 260 PIN ASSIGNMENT 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. 1” Pad, t < 10 sec. 2. Min pad, steady state. Drain 1 Gate 2 Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. This document contains information on a new product. Specifications and information herein are subject to change without notice. Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 2 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MGSF2N02EL/D MGSF2N02EL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 10 Adc) Temperature Coefficient (Positive) V(BR)DSS 20 − − 22 − − Vdc mV/°C − − − − 1.0 10 − − 100 nA 0.5 − − −2.3 1.0 − Vdc mV/°C − − 78 105 85 115 Ciss − 150 − Coss − 130 − Crss − 45 − td(on) − 6.0 − tr − 95 − td(off) − 28 − tf − 125 − QT − 3.5 − Qgs − 0.6 − Qgd − 1.5 − − − 0.76 − 1.2 − trr − 104 − ta − 42 − tb − 62 − QRR − 0.20 − OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Source Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc) IGSS Adc ON CHARACTERISTICS (Note 3) Gate−Source Threshold Voltage (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (VGS = 4.5 Vdc, ID = 3.6 A) (VGS = 2.5 Vdc, ID = 3.1 A) RDS(on) m DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 5 0 Vdc, Vd VGS = 0 V V, f = 1.0 MHz) Output Capacitance Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time (VDD = 16 Vdc, ID = 2.8 Adc, Vgs = 4.5 V, RG = 2.3 ) Turn−Off Delay Time Fall Time Gate Charge (VDS = 16 Vd Vdc, ID = 1.75 1 75 Adc, Ad VGS = 4.0 Vdc) (Note 3) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS VSD Forward Voltage (IS = 1.0 Adc, VGS = 0 Vdc) (Note 3) Reverse Recovery Time (IS = 1.0 Adc, VGS = 0 Vdc, dlS/ dt = 100 A/s) (Note 3) Reverse Recovery Stored Charge V ns C 3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Package Shipping† SOT−23 3,000 Tape & Reel SOT−23 (Pb−Free) 3,000 Tape & Reel SOT−23 10,000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel Device MGSF2N02ELT1 MGSF2N02ELT1G MGSF2N02ELT3 MGSF2N02ELT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MGSF2N02EL 5 VGS = 10 V VGS = 7 V VGS = 5 V 6 VGS = 2.2 V VGS = 2.0 V VGS = 2.6 V 4 VGS = 1.8 V VGS = 3 V VGS = 1.6 V 2 VDS 10 V TJ = 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 8 4 3 2 TJ = 55°C TJ = 100°C 1 VGS = 1.2 V 0 0 0 0.5 1 1.5 2 2.5 0 1.5 2 2.5 3 Figure 2. Transfer Characteristics 0.3 0.12 TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () 1 VGS, GATE−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics TJ = 25°C 0.10 ID = 3.6 A 0.2 0.08 0.06 0.1 0.04 VGS = 2.5 V 0 0.02 0 2 4 6 4 8 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.8 6 7 8 Figure 4. On−Resistance vs. Gate Voltage 10000 ID = 3.6 A VGS = 4.5 V VGS = 0 V IDSS, LEAKAGE (nA) 1.5 1.2 0.9 0.6 −50 5 −ID, DRAIN CURRENTS (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.5 −25 0 25 50 75 100 125 150 TJ = 150°C 1000 TJ = 100°C 100 10 4 TJ, JUNCTION TEMPERATURE (°C) 8 12 16 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature http://onsemi.com 3 Figure 6. Drain−to−Source Leakage Current vs. Voltage 20 MGSF2N02EL VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C 300 C, CAPACITANCE (pF) 250 200 150 Ciss 100 Coss 50 Crss 0 0 4 8 12 16 20 5 QT 4 3 Q1 Q2 2 1 0 ID = 3.6 A TJ = 25°C 0 1 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 2 3 Qg, TOTAL GATE CHARGE, (nC) Figure 8. Gate−to−Source Voltage vs. Total Charge −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 350 1.8 1000 IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 2.8 A VGS = 4.5 V tf 100 t, TIME (ns) tr td(off) 10 td(on) 10 VGS = 4.5 V TJ = 25°C 1.2 0.9 0.6 0.3 0 0.20 1 1 1.5 100 RG, GATE RESISTANCE () 0.30 0.40 0.50 0.60 0.70 0.80 0.90 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 1.00 MGSF2N02EL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AJ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MGSF2N02EL ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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