WILLAS FM120-M+ DTC144ECATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers Features better reverse leakage current and thermal resistance. • • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H Absolute maximum ratings @ 25к , • Terminals :Plated terminals, solderable per MIL-STD-750 Symbol VCC VIN IO Pd Tj Tstg • • • Parameter Method 2026 Supply voltage Input voltage Polarity : Indicated by cathode band Output current Mounting Position : Any Power dissipation Junction: Approximated temperature Weight 0.011 gram Storage temperature Min ---10 -------55 Typ 50 ----200 150 --- Max --40 100 ----150 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .080(2.04) .070(1.78) 0.031(0.8) Typ. Unit V V mA mW ć ć .122(3.10) .106(2.70) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .110(2.80) • 0.146(3.7) 0.130(3.3) .006(0.15)MIN. • • • .063(1.60) .047(1.20) • SOT-23 SOD-123H Pb-Free package is available • Low profile surface mounted application in order to RoHS optimize product board for packing space. code suffix ”G” Low power loss, efficiency.code suffix “H” • Halogen free producthigh for packing current capability, low forwardrating voltage drop. Epoxy• High meets UL 94 V-0 flammability surge capability. • High Moisure Sensitivity Level 1 for overvoltage protection. • Guardring Built-in bias resistors enable the configuration of an inverter circuit Ultra high-speed switching. • without connecting external input resistors epitaxial planar metalresistors silicon junction. • Silicon The bias resistors consist ofchip, thin-film with complete meet environmental of also have the • Lead-free isolation to allowparts negative biasing of thestandards input. They MIL-STD-19500 /228 advantage of almost completely eliminating parasitic effects. • RoHS product for packing code suffix "G" Only the on/off conditions need to be set for operation, making Halogen free product for packing code suffix "H" device design easy Mechanical data .083(2.10) Features MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .055(1.40) .035(0.89) .008(0.20) Ratings at 25℃ ambient temperature unless otherwise specified. .003(0.08) Single phase half wave, 60Hz, resistive of inductive load. Electrical Characteristics @ 25к For capacitive load, derate current by 20% Symbol Parameter Min Typ Max Unit SYMBOL FM120-MH ---FM130-MH --V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VI(off) 0.5 Input voltageRATINGS (VCC=5V, IO=100A) ----- 12 3.0 13 V VI(on) Code (VO=0.3V, IO=2mA) .004(0.10)MAX. Marking 14 15 16 18 10 115 120 VO(on) Output voltage = (IO/II 10mA/0.5mA) --50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM --- 20 0.3 30 V 40 II = Input current (VI 5V) ----0.18 mA 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS A IO(off) Output current (VCC = =50V, VI 0) ----0.5 .020(0.50) Maximum DC 40 50 60 80 100 150 200 GI DCBlocking current Voltage gain (VO=5V, = IO 5mA) 68 VDC --- 20 --- 30 .012(0.30) K¡ R1 Input resistance 32.9 47 61.1 Maximum Average Forward Rectified Current IO 1.0 R2/R1 Resistance ratio 0.8 1.0 1.2 Transition frequency Peak fT Forward Surge Current 8.3 ms single half sine-wave --250 --MHz Dimensions 30 in inches and (millimeters) IFSM (VO=10V, IO=5mA, f=100MHz) superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS Suggested Solder Pad Layout *Marking: 26 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 40 120 RΘJA Typical Thermal Resistance (Note 2) @T A=125℃ IR 0.50 0.70 .031 .800 0.85 0.9 0.92 0.5 .035 .900 10 .079 2.000 NOTES: inches mm 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient .037 .950 2012-06 2012-0 .037 .950 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC144ECA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Typical Characteristics Features ONdesign, Characteristics excellent power dissipation offers • Batch process INPUT VOLTAGE VI(ON) 10 3 1 Mechanical data 0.3 SOD-123H 0.3 (mA) (V) 30 OFF Characteristics 1 VCC=5V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.1 IO better reverse leakage current and thermal resistance. V =0.3V • Low profile surface mounted application Oin order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. metal silicon junction. • Silicon epitaxial planar chip, Ta=25℃ standards of • Lead-free parts meet environmental Ta=100℃ MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" OUTPUT CURRENT 100 Ta=100℃ 0.071(1.8) 0.056(1.4) 0.03 Ta=25℃ 0.01 3E-3 • Epoxy : UL94-V0 rated flame retardant 0.1 : Molded plastic, SOD-123H 30 0.1 • Case 0.3 1 10 3 , I solderable (mA) • Terminals OUTPUT :PlatedCURRENT terminals, per MIL-STD-750 0.040(1.0) 0.024(0.6) 1E-3 0.0 0.4 0.031(0.8) Typ. O 0.8 1.2 INPUT VOLTAGE VI(OFF) 1.6 2.0 0.031(0.8) Typ. (V) Method 2026 • Polarity : Indicated by cathode band VO(ON) —— IO : Any • Mounting Position • Weight : Approximated 0.011 gram 1000 Dimensions in inches and (millimeters) GI IO/II=20 VO=5V OUTPUT VOLTAGE RATINGS Marking Code VRRM 12 20 Maximum RMS Voltage VRMS 14 VDC 20 Ta=100℃ Ta=25℃ Maximum DC Blocking Voltage Peak10Forward Surge Current 8.3 ms single half sine-wave 3 superimposed on rated load (JEDEC method) OUTPUT CURRENT I O Typical Thermal Resistance (Note 2) 10 30 IFSM 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 1 0.1 50 0.3 1 30 3 OUTPUT CURRENT 40 120 -55 to +125 TJ VR TSTG PD 400 10 IO 30 100 (mA) —— Ta - 65 to +175 -55 to +150 f=1MHz Ta=25℃ 350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH IR PD @T A=125℃ (mW) VF 6 Maximum Average Reverse Current at @T A=25℃ (pF) 16 60 1.0 CJ CHARACTERISTICS CO NOTES: CAPACITANCE 15 50 RΘJA Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 14 40 (mA) Typical Junction Capacitance (Note 1) Operating Temperature Range CO —— Storage Temperature Range 8 13 30 10 3 POWER DISSIPATION 1 Ta=25℃ 100 IO Maximum Average Forward Rectified Current 0.5 Ta=100℃ 30 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH Maximum Recurrent Peak Reverse Voltage 30 GI VO(ON) 300 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% DC CURRENT GAIN (mV) 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 100 IO —— 1000 4 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2 0.50 300 0.70 0.9 0.85 0.92 0.5 10 250 DTC144ECA 200 150 100 50 0 0 2012-06 2012-0 5 10 REVERSE BIAS VOLTAGE 15 VR (V) 20 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.