Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: • Improved Efficiency Due to: — Low Base Drive Requirements (High and Flat DC Current Gain hFE) — Low Power Losses (On–State and Switching Operations) — Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ) — Fast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.4 A • Full Characterization at 125°C • Tight Parametric Distributions Consistent Lot–to–Lot • BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369 MAXIMUM RATINGS Rating Symbol BUL45 BUL45F Unit Collector–Emitter Sustaining Voltage VCEO 400 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 9.0 Vdc IC ICM 5.0 10 Adc Collector Current — Continuous — Peak(1) Base Current IB RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c Total Device Dissipation Derate above 25°C (TC = 25°C) 2.0 Adc VISOL — — — 4500 3500 1500 Volts PD 75 0.6 35 0.28 Watts W/°C TJ, Tstg – 65 to 150 °C Symbol MJE18006 MJF18006 Unit Operating and Storage Temperature THERMAL CHARACTERISTICS Rating Thermal Resistance — Junction to Case — Junction to Ambient RθJC RθJA 1.65 62.5 BUL45 CASE 221A–06 TO–220AB 3.55 62.5 °C/W BUL45F CASE 221D–02 ISOLATED TO–220 TYPE UL RECOGNIZED ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 — — Vdc ICEO — — 100 µAdc ICES — — — — 10 100 µAdc IEBO — — 100 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (2) Proper strike and creepage distance must be provided. µAdc (continued) Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Base–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) (IC = 2.0 Adc, IB = 0.4 Adc) VBE(sat) — — 0.84 0.89 1.2 1.25 Vdc Collector–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) — — 0.175 0.150 0.25 — — — 0.25 0.275 0.4 — hFE 14 — 7.0 5.0 10 — 32 14 12 22 34 — — — — — fT — 12 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 50 75 pF Input Capacitance (VEB = 8.0 Vdc) Cib — 920 1200 pF (TC = 125°C) — — 1.75 4.4 — — (TC = 125°C) — — 0.5 1.0 — — (TC = 125°C) — — 1.85 6.0 — — (TC = 125°C) — — 0.5 1.0 — — ton — — 75 120 110 — ns toff — — 2.8 3.5 3.5 — µs ON CHARACTERISTICS (TC = 125°C) Collector–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.4 Adc) Vdc VCE(sat) (TC = 125°C) DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc) (TC = 125°C) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 125°C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Dynamic Saturation Voltage: Determined 1.0 µs and 3.0 µs respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.0 Adc IB1 = 100 mAdc VCC = 300 V) (IC = 2.0 Adc IB1 = 400 mAdc VCC = 300 V) 1.0 µs 3.0 µs 1.0 µs 3.0 µs VCE (Dyn sat) Vdc SWITCHING CHARACTERISTICS: Resistive Load Turn–On Time Turn–Off Time (IC = 2.0 Adc, IB1 = IB2 = 0.4 Adc Pulse Width = 20 µs, (TC = 125°C) Duty Cycle < 20% VCC = 300 V) (TC = 125°C) SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 Vdc, LC = 200 µH, Vclamp = 300 Vdc) Fall Time (IC = 2.0 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc) tfi 70 — — 200 170 — ns tsi 2.6 — — 4.2 3.8 — µs tc — — 230 400 350 — ns tfi — — 110 100 150 — ns tsi — — 1.1 1.5 1.7 — µs tc — — 170 170 250 — ns tfi — 80 120 ns tsi — 0.6 0.9 µs tc — 175 300 ns (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 1.0 Adc, IB1 = 100 mAdc IB2 = 0.5 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 2.0 Adc, IB1 = 250 mAdc IB2 = 2.0 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) 2 Motorola Bipolar Power Transistor Device Data TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 1 V TJ = 25°C TJ = 125°C hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125°C TJ = – 20°C 10 1 0.01 VCE = 5 V TJ = 25°C 1.00 0.10 TJ = – 20°C 10 1 0.01 10.00 0.10 1.00 10.00 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain at @ 5 Volts 2.0 10 1.5 1 A 1.5 2 A A 1.0 3A 4A 5A VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) TJ = 25°C 6A 0.5 1.0 IC/IB = 10 0.1 TJ = 25°C TJ = 125°C IC/IB = 5 IC = 0.5 A 0 0.01 0.10 1.00 0.01 0.01 10.00 1.00 10.00 IB, BASE CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Region Figure 4. Collector–Emitter Saturation Voltage 1.1 10000 C, CAPACITANCE (pF) 1.0 VBE , VOLTAGE (VOLTS) 0.10 0.9 0.8 0.7 TJ = 25°C 0.6 Cib 1000 Cob 100 10 TJ = 125°C IC/IB = 10 IC/IB = 5 0.5 0.4 0.01 TJ = 25°C f = 1 MHz 0.10 1.00 10.00 1 1 10 100 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 1000 3 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1200 3000 IB(off) = IC/2 VCC = 300 V PW = 20 µs 1000 TJ = 25°C TJ = 125°C 2500 2000 t, TIME (ns) t, TIME (ns) 800 IB(off) = IC/2 VCC = 300 V PW = 20 µs TJ = 25°C TJ = 125°C IC/IB = 5 IC/IB = 10 600 400 IC/IB = 10 1500 1000 200 500 IC/IB = 5 0 0 0 1 2 3 5 4 7 6 8 0 3 4 5 6 7 Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff 8 3500 IC/IB = 5 2500 VZ = 300 V VCC = 15 V IB(off) = IC/2 LC = 200 µH 2000 1500 1000 TJ = 25°C TJ = 125°C 500 0 1 IB(off) = IC/2 LC = 200 µH VZ = 300 V VCC = 15 V TJ = 25°C TJ = 125°C 3000 t si , STORAGE TIME (ns) 3000 t, TIME (ns) 2 IC, COLLECTOR CURRENT (AMPS) 3500 0 1 IC, COLLECTOR CURRENT (AMPS) 2500 IC = 1 A 2000 1500 1000 IC/IB = 10 3 2 4 500 5 IC = 2 A 3 4 5 6 7 8 9 10 11 13 12 14 IC, COLLECTOR CURRENT (AMPS) hFE, FORCED GAIN Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE) 300 15 200 250 tc tc 150 t, TIME (ns) t, TIME (ns) 200 150 100 100 VCC = 15 V IB(off) = IC/2 LC = 200 µH VZ = 300 V 50 0 0 4 1 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 50 tfi 2 TJ = 25°C TJ = 125°C 3 4 5 0 0 1 tfi 2 TJ = 25°C TJ = 125°C 3 4 5 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc & tfi, IC/IB = 5 Figure 12. Inductive Switching, tc & tfi, IC/IB = 10 Motorola Bipolar Power Transistor Device Data TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 150 300 140 t fi , FALL TIME (ns) 130 IC = 1 A 120 t c , CROSSOVER TIME (ns) IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH TJ = 25°C TJ = 125°C 110 100 90 70 250 IC = 1 A 200 150 100 IC = 2 A 80 TJ = 25°C TJ = 125°C 50 3 4 5 6 7 8 9 10 11 12 13 15 14 VCC = 15 V VZ = 300 V IB(off) = IC/2 LC = 200 µH 3 4 5 6 7 IC = 2 A 8 9 10 11 12 hFE, FORCED GAIN hFE, FORCED GAIN Figure 13. Inductive Fall Time, tfi(hFE) Figure 14. Crossover Time 13 14 15 GUARANTEED SAFE OPERATING AREA INFORMATION 6 100 TC ≤ 125°C IC/IB ≥ 4 LC = 500 µH 10 5 ms 50 µs 1 ms 10 µs 1 µs EXTENDED SOA 1.0 DC (BUL45F) 0.1 0.01 10 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 Figure 15. Forward Bias Safe Operating Area POWER DERATING FACTOR SECOND BREAKDOWN DERATING 0.6 0.4 THERMAL DERATING 0.2 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 17. Forward Bias Power Derating Motorola Bipolar Power Transistor Device Data 5 4 3 2 –5 V 1 0 300 VBE(off) = 0 V –1.5 V 400 600 700 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 800 Figure 16. Reverse Bias Switching Safe Operating Area 1.0 0.8 I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) DC (BUL45) 160 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse–biased. The safe level is specified as a reverse–biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 5 10 5 4 VCE dyn 1 µs 3 8 2 VOLTS 90% IC tfi IC 9 tsi 7 dyn 3 µs 1 6 0 5 tc VCLAMP 10% VCLAMP IB 90% IB1 10% IC 4 –1 90% IB –2 3 1 µs –3 –4 2 3 µs IB –5 0 1 0 1 2 3 4 TIME 5 6 7 0 8 Figure 18. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 6 7 8 Figure 19. Inductive Switching Measurements +15 V 1 µF 150 Ω 3W MTP8P10 100 Ω 3W IC PEAK 100 µF VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 Iout MPF930 +10 V IB A IB2 50 Ω RB2 MJE210 COMMON 500 µF 150 Ω 3W MTP12N10 1 µF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA –Voff INDUCTIVE SWITCHING L = 200 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit 6 Motorola Bipolar Power Transistor Device Data r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL THERMAL RESPONSE 1.00 D = 0.5 0.2 0.10 0.1 P(pk) 0.05 t1 t2 0.02 SINGLE PULSE 0.01 0.01 DUTY CYCLE, D = t1/t2 0.10 1.00 RθJC(t) = r(t) RθJC RθJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 10.00 100.00 1000.00 t, TIME (ms) r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 20. Typical Thermal Response (ZθJC(t)) for BUL45 1.00 D = 0.5 0.2 0.10 P(pk) 0.1 t1 t2 0.05 0.02 0.01 0.01 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.10 1.00 10.00 100.00 RθJC(t) = r(t) RθJC RθJC = 5.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 1000.00 10000.00 100000.00 t, TIME (ms) Figure 21. Typical Thermal Response (ZθJC(t)) for BUL45F Motorola Bipolar Power Transistor Device Data 7 demonstrate how well these devices operate. The circuit and detailed component list are provided below. The BUL45/BUL45F Bipolar Power Transistors were specially designed for use in electronic lamp ballasts. A circuit designed by Motorola applications was built to COLLECTOR CURRENT SENSE (USE EXTERNAL STRAPS) 22 µF MUR150 385 V Q1 47 Ω 1Ω 470 kΩ D9 C5 D5 D3 C1 D10 IC T1A 400 V 0.1 µF 1000 V 15 µF C4 TUBE T1B D8 FUSE D1 D7 IC 0.1 µF D6 Q2 C3 1000 V 47 Ω MUR150 C2 CTN 1N4007 L D2 0.1 µF D4 100 V AC LINE 220 V 10 nF C6 400 V 5.5 mH 1N5761 1Ω Components Lists Q1 D1 D2 D3 D5 D7 CTN L = = = = = = = = T1 = Q2 = BUL45 Transistor 1N4007 Rectifier 1N5761 Rectifier D4 = MUR150 D6 = MUR105 D8 = D9 = D10 = 1N400 47 Ω @ 25°C RM10 core, A1 = 400, B51 (LCC) 75 turns, wire ∅ = 0.6 mm FT10 toroid, T4A (LCC) Primary: 4 turns Secondaries: T1A: 4 turns Secondaries: T1B: 4 turns All resistors are 1/4 Watt, ±5% R1 = 470 kΩ R2 = R3 = 47 Ω R4 = R5 = 1 Ω (these resistors are optional, and might be replaced by a short circuit) C1 = 22 µF/385 V C2 = 0.1 µF C3 = 10 nF/1000 V C4 = 15 nF/1000 V C5 = C6 = 0.1 µF/400 V NOTES: 1. Since this design does not include the line input filter, it cannot be used “as–is” in a practical industrial circuit. 2. The windings are given for a 55 Watt load. For proper operation they must be re–calculated with any other loads. Figure 22. Application Example 8 Motorola Bipolar Power Transistor Device Data TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK MOUNTED FULLY ISOLATED PACKAGE 0.107″ MIN MOUNTED FULLY ISOLATED PACKAGE LEADS LEADS HEATSINK HEATSINK 0.107″ MIN 0.110″ MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** 4–40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola Bipolar Power Transistor Device Data 9 PACKAGE DIMENSIONS –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L STYLE 1: PIN 1. 2. 3. 4. R V J BASE COLLECTOR EMITTER COLLECTOR G D N DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BUL45 CASE 221A–06 TO–220AB ISSUE Y –T– –B– F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S Q U A 1 2 3 H STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER –Y– K G N L D J R 3 PL 0.25 (0.010) M B M DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 Y BUL45F CASE 221D–02 (ISOLATED TO–220 TYPE) ISSUE D How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 10 ◊ Motorola Bipolar Power Transistor Device Data *BUL45/D* BUL45/D