VISHAY MI3060C

New Product
M3060C, MF3060C & MI3060C
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
FEATURES
ITO-220AB
TO-220AB
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
2
3
1
1
M3060C
2
3
• High frequency operation
MF3060C
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
PIN 2
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-262AA
K
TYPICAL APPLICATIONS
1
2
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
3
MI3060C
PIN 1
MECHANICAL DATA
PIN 2
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PIN 3
PRIMARY CHARACTERISTICS
IF(AV)
15 A x 2
VRRM
60 V
IFSM
160 A
VF at IF = 15 A
0.547 V
TJ max.
150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
M3060C
MF3060C
MI3060C
UNIT
VRRM
60
V
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
160
A
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
TJ, TSTG
- 65 to + 150
°C
VAC
1500
V
Maximum average forward rectified current
total device
per diode
Operating junction and storage temperature range
Isolation voltage from terminal to heatsink with t = 1 min
Document Number: 89009
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
New Product
M3060C, MF3060C & MI3060C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Instantaneous forward voltage per diode
(1)
IF = 5.0 A
IF = 7.5 A
IF = 15 A
SYMBOL
TJ = 25 °C
TYP.
MAX.
0.482
0.520
0.614
0.72
0.387
0.443
0.547
0.62
UNIT
V
VF
IF = 5.0 A
IF = 7.5 A
IF = 15 A
TJ = 125 °C
Reverse current per diode (2)
rated VR
TJ = 25 °C
TJ = 125 °C
IR
50
23
350
45
µA
mA
Typical junction capacitance per diode
4.0 V, 1 MHz
TJ = 25 °C
CJ
540
-
pF
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M3060C
MF3060C
MI3060C
UNIT
RθJC
2.0
5.5
2.0
°C/W
Thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
M3060C-E3/4W
PREFERRED P/N
1.85
4W
50/tube
Tube
ITO-220AB
MF3060C-E3/4W
1.75
4W
50/tube
Tube
TO-262AA
MI3060C-E3/4W
1.46
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
11
30
24
D = 0.3
10
MF3060C
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
18
M(I)3060C
12
6
D = 0.8
D = 0.2
9
8
D = 1.0
D = 0.1
7
6
5
4
T
3
2
D = tp/T
1
0
D = 0.5
tp
0
0
50
100
150
0
2
4
6
8
10
12
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89009
Revision: 19-May-08
New Product
M3060C, MF3060C & MI3060C
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 25 °C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10
M(I)3060C
1
0.1
0.01
0.01
0
Junction to Case
0.8
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
1000
TJ = 150 °C
100
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.001
10
20
30
40
50
60
70
80
90
100
10
MF3060C
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 89009
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
New Product
M3060C, MF3060C & MI3060C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
PIN
2
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.671 (17.04)
0.651 (16.54)
PIN
1
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
0.057 (1.45)
0.045 (1.14)
0.076 (1.93) REF.
45° REF.
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45)
MAX.
30° (TYP.)
(REF.)
0.250 (6.35)
MIN.
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
K
0.350 (8.89)
0.330 (8.38)
0.950 (24.13)
0.920 (23.37)
1
PIN
2
3
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
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0.401 (10.19)
0.381 (9.68)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89009
Revision: 19-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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