2N3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 625 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = -200mA • Pb free product are available :99% Sn above can meet RoHS environment substance directive request MECHANICAL DATA Case: TO-92 Terminals: Solderable per MIL-STD-750, Method 2026 Approx Weight : 0.02grams Marking : S2A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector - Emitter Voltage V C EO -40 V Collector - Base Voltage V C BO -40 V Emitter - Base Voltage V EBO -5.0 V IC -200 mA Max Power Dissipation PTOT 625 mW Storage Temperature TSTG -55 to 150 O Junction Temperature TJ -55 to 150 O Collector Current - Continuous C C THERMAL CHARACTERISTICS PARAMETER Thermal Resistance, Junction to Ambient REV.0-DEC.12.2005 SYMBOL VALUE RθJA 200 UNITS O C/W PAGE . 1 2N3906 ELECTRICAL CHARACTERISTICS PA RA M E TE R S YM B O L T E S T C O N D IT IO N M IN . T YP. MA X . U N IT C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V (B R)C E O IC = 1 . 0 m A , IB = 0 -40 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e V (B R)C B O IC = - 1 0 u A , IE = 0 -40 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e V (B R)E B O IE = 1 0 u A , IC = 0 -5 .0 - - V B a s e C ut o f f C ur r e nt IB L V CE=-3 0 V, V EB=-3 .0 V - - -50 nA C o l l e c t o r C ut o f f C ur r e nt IC E X V CE=-3 0 V, V EB=-3 .0 V - - -50 nA hFE IC = - 0 . 1 m A , V C E = - 1 . 0 V IC = - 1 . 0 m A , V C E = - 1 . 0 V IC = - 1 0 m A , V C E = - 1 . 0 V IC = - 5 0 m A , V C E = - 1 . 0 V IC = - 1 0 0 m A , V C E = - 1 . 0 V 60 80 100 60 30 - 300 - - D C C ur r e nt G a i n C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e V C E ( S AT) IC = - 1 0 m A , IB = - 1 . 0 m A IC = - 5 0 m A , IB = - 5 . 0 m A - - -0 .2 5 -0 .4 V B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e V B E ( S AT) IC = - 1 0 m A , IB = - 1 . 0 m A IC = - 5 0 m A , IB = - 5 . 0 m A -0 .6 5 - - -0 .8 5 -0 .9 5 V C o l l e c t o r - B a s e C a p a c i t a nc e C CBO V C B = - 5 . 0 V , IE = 0 , f = 1 M H Z - - 4 .5 pF E m i t t e r - B a s e C a p a c i t a nc e C EBO V C B = - 0 . 5 V , IC = 0 , f = 1 M H Z - - 10 pF - - 35 ns - - 35 ns - - 225 ns - - 75 ns D e l a y Ti m e td R i s e Ti m e tr S t o r a g e Ti m e ts F a l l Ti m e V CC=-3 V, V BE=-0 .5 V, IC = - 1 0 m A , IB = - 1 m A V C C = - 3 V , IC = - 1 0 m A IB 1 = IB 2 = - 1 m A tf SWITCHING TIME EQUIVALENT TEST CIRCUITS 3V 3V 275O 275O < 1ns 0 < 1ns +9.1V 10KO 0.5V C S* < 4pF -10.9V 1N916 300ns 10KO 0 CS * < 4pF -10.9V 1N916 10 to 500us Duty Cycle ~ 2.0% Delay and Rise Time Equivalent Test Circuit REV.0-DEC.12.2005 Duty Cycle ~ 2.0% Storage and Fall Time Equivalent Test Circuit PAGE . 2 2N3906 ELECTRICAL CHARACTERISTICS CURVES 1.2 300 TJ = 150° C VCE = 1V 250 1.0 0.8 TJ = 100° C TJ = 25° C VBE(V) hFE 200 150 TJ = 25° C 100 0.6 TJ = 100° C TJ = 150° C 0.4 50 0.2 VCE = 1V 0 0.01 0.1 1 10 100 0.0 0.01 1000 0.1 Collector Current, IC (mA) Fig. 1. Typical hFE vs. Collector Current 1.00 10 100 1000 Fig. 2. Typical VBE vs. Collector Current 1.000 IC/IB = 10 0.10 TJ = 25° C TJ = 100° C VBE(sat) (V) VCE(sat) (V) 1 Collector Current, IC (mA) TJ = 150° TJ = 25° TJ = 150° C IC/IB = 10 0.01 0.01 0.1 1 10 100 1000 0.100 0.01 Collector Current, IC (mA) 0.1 1 10 100 Collector Current, IC (mA) Fig. 3. Typical VCE (sat) vs. Collector Current Fig. 4. Typical VBE (sat) vs. Collector Current 10 Capacitance (pF) CIB (EB) COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 5. Typical Capacitances vs. Reverse Voltage REV.0-DEC.12.2005 PAGE . 3 2N3906 TO-92 Case Outline TO-92 LEGAL STATEMENT Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-AUG.23.2005 PAGE . 4