ONSEMI MMBT5087LT1G

MMBT5087LT1G
Low Noise Transistor
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−50
Vdc
Collector −Base Voltage
VCBO
−50
Vdc
Emitter−Base Voltage
VEBO
−3.0
Vdc
IC
−50
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
2Q M G
G
1
2Q = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT5087LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBT5087LT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 4
1
Publication Order Number:
MMBT5087LT1/D
MMBT5087LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
−
Vdc
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−50
−
Vdc
−
−
−10
−50
250
250
250
800
−
−
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = −10 Vdc, IE = 0)
(VCB = −35 Vdc, IE = 0)
ICBO
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mAdc, VCE = −5.0 Vdc)
(IC = −1.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
VCE(sat)
−
−0.3
Vdc
Base−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
VBE(sat)
−
0.85
Vdc
fT
40
−
MHz
Cobo
−
4.0
pF
Small−Signal Current Gain
(IC = −1.0 mAdc, VCE = −5.0 Vdc, f = 1.0 kHz)
hfe
250
900
−
Noise Figure
(IC = −20 mAdc, VCE = −5.0 Vdc, RS = 10 kW, f = 1.0 kHz)
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)
NF
−
−
2.0
2.0
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = −500 mAdc, VCE = −5.0 Vdc, f = 20 MHz)
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
dB
TYPICAL NOISE CHARACTERISTICS
(VCE = − 5.0 Vdc, TA = 25°C)
10
7.0
IC = 10 mA
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
30 mA
3.0
100 mA
300 mA
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
3.0
2.0
300 mA
1.0
0.7
0.5
100 mA
30 mA
0.3
0.2
1.0
10 mA
0.1
10
20
50
100 200
500 1.0k
f, FREQUENCY (Hz)
2.0k
5.0k
10k
10
Figure 1. Noise Voltage
20
50
100 200
500 1.0k 2.0k
f, FREQUENCY (Hz)
Figure 2. Noise Current
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2
5.0k
10k
MMBT5087LT1G
NOISE FIGURE CONTOURS
1.0M
500k
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
2.0 dB
3.0 dB
200
100
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
(VCE = − 5.0 Vdc, TA = 25°C)
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
2.0 dB
3.0 dB
200
100
5.0 dB
10
1.0M
500k
500 700 1.0k
5.0 dB
10
20
Figure 3. Narrow Band, 100 Hz
RS , SOURCE RESISTANCE (OHMS)
1.0M
500k
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700 1.0k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is Defined as:
NF + 20 log10
20k
10k
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
ƫ
en2 ) 4KTRS ) In 2RS2 1ń2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
0.5 dB
5.0k
2.0k
1.0k
500
ƪ
500 700 1.0k
IC, COLLECTOR CURRENT (mA)
Figure 5. Wideband
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3
MMBT5087LT1G
1.0
100
TA = 25°C
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL STATIC CHARACTERISTICS
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
TA = 25°C
PULSE WIDTH = 300 ms
80 DUTY CYCLE ≤ 2.0%
300 mA
200 mA
150 mA
40
100 mA
20
50 mA
0
5.0 10
20
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
40
Figure 7. Collector Characteristics
1.4
0.2
250 mA
60
Figure 6. Collector Saturation Region
0.1
IB = 400 mA
350 mA
50
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
*qVC for VCE(sat)
0
- 55°C to 25°C
0.8
25°C to 125°C
1.6
2.4
0.1
100
25°C to 125°C
Figure 8. “On” Voltages
qVB for VBE
0.2
- 55°C to 25°C
0.5 1.0 2.0
5.0
10 20
IC, COLLECTOR CURRENT (mA)
Figure 9. Temperature Coefficients
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50
100
MMBT5087LT1G
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
100
70
50
tf
30
td @ VBE(off) = 0.5 V
20
2.0
3.0
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
50 70
10
-1.0
100
- 2.0 - 3.0 - 5.0 - 7.0 -10
- 20 - 30
IC, COLLECTOR CURRENT (mA)
Figure 10. Turn−On Time
- 50 - 70 -100
Figure 11. Turn−Off Time
500
10
TJ = 25°C
TJ = 25°C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
f,
T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
VCC = - 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Current−Gain — Bandwidth Product
Figure 13. Capacitance
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5
10
20
50
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MMBT5087LT1G
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 16
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569/D)
ZqJA(t) = r(t) • RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
Figure 14. Thermal Response
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
104
IC, COLLECTOR CURRENT (nA)
VCC = 30 V
A train of periodical power pulses can be represented by
the model as shown in Figure 16. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 14 was calculated for various
duty cycles.
To find ZqJA(t), multiply the value obtained from Figure
14 by the steady state value RqJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.
103
ICEO
102
101
ICBO
AND
ICEX @ VBE(off) = 3.0 V
100
10-1
10-2
-4
0
-2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. Typical Collector Leakage Current
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MMBT5087LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative
MMBT5087LT1/D