ON MJ11022G Complementary darlington silicon power transistor Datasheet

MJ11021(PNP)
MJ11022 (NPN)
Complementary Darlington
Silicon Power Transistors
Complementary Darlington Silicon Power Transistors are designed
for use as general purpose amplifiers, low frequency switching and
motor control applications.
Features
• High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types)
• Collector−Emitter Sustaining Voltage
VCEO(sus) = 250 Vdc (Min) − MJ11022, 21
• Low Collector−Emitter Saturation
VCE(sat)
•
•
= 1.0 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
100% SOA Tested @ VCE = 44 V
IC = 4.0 A
t = 250 ms
Pb−Free Packages are Available*
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15 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
250 VOLTS, 175 WATTS
TO−204 (TO−3)
CASE 1−07
STYLE 1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
250
Vdc
Emitter−Base Voltage
VEBO
50
Vdc
Collector Current − Continuous
− Peak (Note 1)
IC
15
30
Adc
Base Current
IB
0.5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
175
1.16
W
W/°C
TJ, Tstg
– 65 to +175
− 65 to +200
°C
Operating and Storage Junction
Temperature Range
MARKING DIAGRAM
MJ1102xG
AYYWW
MEX
MJ1102x = Device Code
x = 1 or 2
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.86
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
ORDERING INFORMATION
Device
MJ11021
MJ11021G
MJ11022
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2
1
MJ11022G
Package
Shipping
TO−3
100 Units/Tray
TO−3
(Pb−Free)
100 Units/Tray
TO−3
100 Units/Tray
TO−3
(Pb−Free)
100 Units/Tray
Publication Order Number:
MJ11021/D
PD, POWER DISSIPATION (WATTS)
MJ11021(PNP)
MJ11022 (NPN)
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
200
RC
SCOPE
TUT
150
V2
APPROX
+12 V
100
0
50
V1
APPROX
−8.0 V
0
VCC
100 V
RB
51
D1
≈ 10 K
≈ 8.0
+4.0 V
25 ms
for td and tr, D1 is disconnected
and V2 = 0
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
200
For NPN test circuit reverse diode and voltage polarities.
Figure 1. Power Derating
Figure 2. Switching Times Test Circuit
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
250
−
−
1.0
−
−
0.5
5.0
−
2.0
400
100
15,000
−
−
−
2.0
3.4
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
MJ11021, MJ11022
VCEO(sus)
Collector Cutoff Current
(VCE = 125, IB = 0)
MJ11021, MJ11022
Vdc
ICEO
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ICEV
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 100 mA)
(IC = 15 Adc, IB = 150 mA)
VCE(sat)
Vdc
Base−Emitter On Voltage
IC = 10 A, VCE = 5.0 Vdc)
VBE(on)
−
2.8
Vdc
Base−Emitter Saturation Voltage
(IC = 15 Adc, IB = 150 mA)
VBE(sat)
−
3.8
Vdc
[hfe]
3.0
−
Mhz
−
−
400
600
75
−
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
MJ11022
MJ11021
Small−Signal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
pF
−
SWITCHING CHARACTERISTICS
Characteristic
Symbol
Delay Time
Rise Time
Storage Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 50 V) (See Figure 2)
Fall Time
1. Pulsed Test: Pulse Width = 300 ms, Duty Cycle v 2%.
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2
Typical
NPN
PNP
Unit
td
150
75
ns
tr
1.2
0.5
ms
ts
4.4
2.7
ms
tf
10.0
2.5
ms
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJ11021(PNP)
1.0
0.7
0.5
MJ11022 (NPN)
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
RqJC(t) = r(t) RqJC
RqJC(t) = 0.86°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.05
0.02
0.01
0.03
SINGLE PULSE
0.02
0.01
0.01
0.02
0.03 0.05
1.0
0.2
0.3 0.5
1.0
2.0
3.0 5.0
t, TIME (ms)
10
20
30
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1000
Figure 3. Thermal Response
1.0ms
0.5ms
30
20
0.1 ms
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0
3.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
30
5.0ms
dc
TJ = 175°C
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
5.0 7.0
10
20
30 50
70
L = 200 mH
IC/IB1 ≥ 50
TC = 25°C
VBE(off) 0 − 5.0 V
RBE = 47 W
DUTY CYLE = 10%
20
10
0
100 150 200
0 20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias Safe
Operating Area (FBSOA)
60
100
140
180
220
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
260
Figure 5. Maximum RBSOA, Reverse Bias Safe
Operating Area
REVERSE BIAS
FORWARD BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be hold to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives ROSOA characteristics.
There are two limitations on the power handling ability of
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T J(pk) = 175_C, TC is
variable dependIng on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 175_C. T J(pk) may be calculated from the data in
Figure 3. At high case temperatures thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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MJ11021(PNP)
MJ11022 (NPN)
PNP
NPN
30,000
20,000
VCE = 5.0 Vdc
TJ = 150°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
10,000
7000
5000
3000
2000
TJ = 25°C
1000
700
500
TJ = − 55°C
300
VCE = 5.0 Vdc
TJ = 150°C
10,000
7000
5000
TJ = 25°C
3000
2000
TJ = − 55°C
1000
700
500
200
100
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (A)
10
300
0.2 0.3
15 20
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (A)
10
15 20
Figure 6. DC Current Gain
NPN
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
PNP
4.0
IC = 15 A
TJ = 25°C
3.5
IC = 10 A
3.0
IC = 5.0 A
2.5
2.0
1.5
1.0
0.5
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IB, BASE CURRENT (mA)
4.0
IC = 15 A
3.5
TJ = 25°C
IC = 10 A
3.0
IC = 5.0 A
2.5
2.0
1.5
1.0
0.5
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IB, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
PNP
NPN
4.0
3.5
4.0
3.5
TJ = 25°C
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
TJ = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
0.1
VBE(sat) @ IC/IB = 100
VBE @ VCE = 5.0 V
2.0 3.0 5.0 7.0 10
2.5
2.0
1.5
VBE(sat) @ IC/IB = 100
1.0
VCE(sat) @ IC/IB = 100
0.2 0.3 0.5 0.7 1.0
3.0
20 30
50
0.5
0.1
70
VBE @ VCE = 5.0 V
0.2 0.3 0.5 0.7 1.0
COLLECTOR CURRENT (AMPS)
VCE(sat) @ IC/IB = 100
2.0 3.0 5.0 7.0 10
COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
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4
20 30
50
MJ11021(PNP)
MJ11022 (NPN)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
A
N
C
−T−
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
−−− 1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−− 0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−− 26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−− 21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
M
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MJ11021/D
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