DIODES ZXMP7A17G

ZXMP7A17G
70V P-channel enhancement mode MOSFET
Summary
VDSS=70V : RDS(on)=0.16⍀
ID=3.7A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
D
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT223 package
G
S
Applications
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
•
Class D audio output stages
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXMP7A17GTA
7
12
1,000
ZXMP7A17GTC
13
12
4,000
Device marking
ZXMP
7A17
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ZXMP7A17G
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
-70
V
Gate-source voltage
VGS
⫾20
V
ID
-3.7
A
Continuous drain current
@ VGS=10V; TA=25°C (b)
@ VGS=10V; TA=25°C (b)
-2.9
@ VGS=10V; TA=25°C (a)
-2.6
IDM
-9.6
A
IS
-4.8
A
Pulsed source current (body diode) (c)
ISM
-9.6
A
Power dissipation at TA =25°C (a)
Linear derating factor
PD
2
16
W
mW/°C
Power dissipation at TA =25°C (b)
Linear derating factor
PD
3.9
31
W
mW/°C
Tj, Tstg
-55 to +150
°C
Symbol
Limit
Unit
Junction to ambient (a)
R⍜JA
62.5
°C/W
Junction to ambient (b)
R⍜JA
32
°C/W
Pulsed drain current (c)
Continuous source current (body diode) (b)
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ5 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10␮s - pulse width limited by maximum junction
temperature.
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ZXMP7A17G
Characteristics
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ZXMP7A17G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Drain-source breakdown
voltage
V(BR)DSS
-70
Zero gate voltage drain
current
IDSS
Gate-body leakage
IGSS
Typ.
Max.
Unit
Conditions
Static
Gate-source threshold voltage VGS(th)
Static drain-source on-state
resistance (*)
V
ID= -250␮A, VGS=0V
-1
␮A
VDS= -70V, VGS=0V
100
nA
VGS=±20V, VDS=0V
-1.0
V
ID= -250␮A, VDS=VGS
0.16
⍀
VGS= -10V, ID= -2.1A
0.25
⍀
VGS= -4.5V, ID = -1.7A
4.4
S
VDS= -15V, ID= -2.1A
RDS(on)
Forward transconductance(*)(‡) gfs
Dynamic(‡)
Input capacitance
Ciss
635
pF
Output capacitance
Coss
52
pF
Reverse transfer capacitance
Crss
42.5
pF
Turn-on-delay time
td(on)
2.5
ns
Rise time
tr
3.4
ns
Turn-off delay time
td(off)
27.9
ns
Fall time
tf
8
ns
Total gate charge
Qg
9.6
nC
Total gate charge
Qg
18
nC
Gate-source charge
Qgs
1.77
nC
Gate drain charge
Qgd
3.66
nC
Diode forward voltage(*)
VSD
-0.85
Reverse recovery time(‡)
trr
Reverse recovery charge(‡)
Qrr
VDS= -40V, VGS=0V
f=1MHz
Switching (†) (‡)
VDD= -35V, ID= -1A
RG≅6.0⍀, VGS= -10V
VDS= -35V, VGS= -5V
ID= -2.1A
VDS= -35V, VGS= -10V
ID= -2.1A
Source-drain diode
-0.95
V
Tj=25°C, IS= -2.0A,
VGS=0V
29.8
ns
38.5
nC
Tj=25°C, IS= -2.1A,
di/dt=100A/␮s
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
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ZXMP7A17G
Typical characteristics
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ZXMP7A17G
Typical characteristics
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ZXMP7A17G
Intentionally left blank
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ZXMP7A17G
Package outline - SOT223
DIM
Millimeters
Inches
DIM
Millimeters
Min
Max
Inches
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
8
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