<^E.mi-(-on.au<2toi Lp , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 IRF610-613 MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. LOW RDS(on) VQS Rated at ± 20 V Silicon Gate lor Fast Switching Speeds loss. VDS(0n), Specified at Elevated Temperature Rugged Low Drive Requirements Ease of Paralleling IRF610 IRF611 IRF612 IRF613 MTP2N18 MTP2N20 Maximum Ratings Rating IRF610/612 MTP2N20 Rating MTP2N18 Rating IRF611/813 Unit VDSS Drain to Source Voltage1 200 180 150 V VDGR Drain to Gate Voltage1 RGS «= 20 kfi 200 180 150 V Symbol Characteristic VGS Gate to Source Voltage Tj, TS|S Operating Junction and Storage Temperatures TL Maximum Lead Temperature for Soldering Purposes, 1/8" From Case for 5 s ±20 V -55 to +150 -55 to +150 °c 275 275 275 °c IRF610/611 MTP2N18/20 IRF612/613 1.5 1.8 2.4 2,5 1.5 10 3.25 2.25 9.0 2.0 1.25 8.0 ±20 -55 to ±20 +150 Maximum On-State Characteristics RDS(on) Static Drain-to-Source On Resistance b Drain Current Continuous at Tc = 25°C Continuous at TO - 100°C Pulsed n A Maximum Thermal Characteristics Rjjc Thermal Resistance, Junction to Case 6.4 2.5 6.4 °C/W RfljA Thermal Resistance, Junction to Ambient 80 80 80 °C/W PD Total Power Dissipation at Tc - 25°C 20 50 20 W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors IRF610-613 MTP2N18/2N20 Electrical Characteristics (Tc - 25°C unless otherwise noted) Characteristic Symbol Mln Max Unit Test Conditions Off Characteristics V(BR)DSS IDSS IGSS Drain Source Breakdown Voltage1 IRF610/612/MTP2N20 200 MTP2N18 180 IRF611/613 150 Zero Gate Voltage Drain Current 250 Gate-Body Leakage Current V VGS = 0 V, ID - 250 pA MA VDS - Rated VDSs. VQS = 0 V 1000 MA VDS = 0.8 x Rated VDSs. VGS = 0 V, TC = 125°C ±500 nA VQS = ± 20 V, VDS = 0 V On Characteristics VQS(th) RDSIOH) VDS(on) Gate Threshold Voltage V IRF610-613 2.0 4.0 MTP2N18/20 2.0 4.5 IRF61 0/611 1.5 IRF612/613 2.4 MTP2N18/20 1.8 Drain-Source On-Voltage2 Forward Transconductance ID = 1 mA, VDS - VGS n Static Drain-Source On-Resistance2 MTP2N18/2N20 grs ID - 250 MA. VDS • VGS VQS =10 V, ID =1.25 A ID -1.0 A 4.4 V VGS =10 V; I0 = 2.0 A 3.6 V VQS -10 V; ID -1.0 A; T C -100°C 0.8 S (U) VDS = 10 V. ID =1.25 A Dynamic Characteristics Qss Input Capacitance coas Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics 200 PF 80 pF 25 PF VDS = 25 V, VGS - 0 V f-1.0 MHz 25''C, Figures 11, 12}3 td(on) Turn-On Delay Time 15 ns t, Rise Time 25 ns tdfoH) Turn-Off Delay Time 15 ns t| Fall Time 15 ns Q9 Total Gate Charge 7.5 nC VDD = 50 V, ID = 1.25 A VGS = 10 V, RGEN = 50 ft RQS = 50 n V GS = 10 V, ID = 3.0 A VDD = 45 V IRF610-613 MTP2N18/2N20 Electrical Characteristics (Cont.) (Tc - 25°C unless otherwise noted) Typ Characteristic Symbol Max Test Conditions Unit Source-Drain Diode Characteristics Diode Forward Voltage IRF610/611 VSD IRF612/613 Reverse Recovery Time tir 2.0 V Is = 2.5 A; VGS = 0 V 1.8 V ls - 2.0 A: VGS - 0 V ns ls = 2.5 A; dls/dt = 25 A//jS 290 Holes 1. Tj-+25'C to +150'C 2. Pulse test Pulse width < SO Its, Only cycle <1% 3. Switching time measurements performed en LEM TR-5B tast equipmGnl Typical Performance Curves Figure 2 Static Drain to Source Resistance vs Drain Current Figure 1 Output Characteristics 5 0 1 4 6 I Vj,—DRAIN TO SOURCE VOLTAQE-V 10 1 2 3 4 ID—DRAIN CURRENT—A PCll44flf Figure 3 Transfer Characteristics Figure 4 Temperature Variation of Gate to Source Threshold Voltage 7 <l V10 I0-1.0mA 1 * \-n>s I" \ i* i § c'fl 4 s < 7 a « vM-OATe TO SOURCE VOLTAOB-V 1 0.7 z 0 Tj-JUNCTION TEMPERATURE—*C