IXYS IXFL38N100P Polar power mosfet hiperfet Datasheet

Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
IXFL38N100P
VDSS
ID25
RDS(on)
trr
( Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
=
=
≤
≤
1000V
29A
Ω
230mΩ
300ns
ISOPLUS i5-PakTM (HV)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
29
A
IDM
TC = 25°C, Pulse Width Limited by TJM
120
A
IA
TC = 25°C
19
A
EAS
TC = 25°C
2
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
15
V/ns
PD
TC = 25°C
520
W
-55 ... +150
°C
TJ
TJM
150
°C
Tstg
-55 ... +150
°C
TL
Maximum Lead Temperature for Soldering
300
°C
TSOLD
Plastic Body for 10s
260
°C
VISOL
50/60 Hz, RMS, 1 minute
IISOL ≤ 1mA
t = 1s
2500
3000
V~
V~
FC
Mounting Force
40..120/4.5..27
N/lb.
8
g
Weight
G
D
G = Gate
S = Source
BVDSS
VGS = 0V, ID = 3mA
1000
Silicon Chip on Direct-Copper-Bond
Substrate
- High Power Dissipation
- Isolated Mounting Surface
- 2500V Electrical Isolation
z
International Standard Packages
z
miniBLOC, with Aluminium Nitride
Isolation
z
Low Drain to Tab Capacitance(<30pF)
z
Rugged Polysilicon Gate Cell
Structure
z
Avalanche Rated
z
Fast Intrinsic Diode
Advantages
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS , VGS = 0V
RDS(on)
VGS = 10V, ID = 19A, Note 1
TJ = 125°C
© 2009 IXYS CORPORATION, All Rights Reserved
z
V
6.5
V
± 300
nA
50 μA
4 mA
230 mΩ
D = Drain
z
z
Characteristic Values
Min.
Typ.
Max.
ISOLATED TAB
Features
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
S
Easy Assembly
Space Savings
High Power Density
Applications
z
Switched-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC Motor Drives
z
Robotics and Servo Controls
DS99755B(7/09)
IXFL38N100P
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
18
VDS = 20V, ID = 19A, Note 1
29
S
24
nF
1245
pF
80
pF
0.78
Ω
74
ns
55
ns
71
ns
40
ns
350
nC
150
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate input resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 10V, VDS = 0.5 • VDSS, ID = 19A
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 19A
Qgd
RthJC
0.15
Source-Drain Diode
TJ = 25°C Unless Otherwise Specified)
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
trr
QRM
IRM
IF = IS, VGS = 0V, Note 1
VR = 100V, VGS = 0V
INCHES
MIN
MAX
MILLIMETER
MIN
MAX
0.190
0.205
4.83
0.102
0.118
2.59
3.00
nC
A2
0.046
0.055
1.17
1.40
b
0.045
0.055
1.14
1.40
0.24 °C/W
b1
0.063
0.072
1.60
1.83
°C/W
b2
0.058
0.068
1.47
1.73
c
0.020
0.029
0.51
0.74
D
1.020
1.040
25.91
26.42
E
0.770
0.799
19.56
20.29
e
0.150 BSC
e1
L
0.450 BSC
0.780
0.820
5.21
3.81 BSC
11.43 BSC
19.81
20.83
L1
0.080
0.102
2.03
2.59
38
A
Q
0.210
0.235
5.33
5.97
150
A
Q1
0.490
0.513
12.45
13.03
R
0.150
0.180
3.81
4.57
R1
0.100
0.130
2.54
3.30
S
0.668
0.690
16.97
17.53
1.5
IF = 25A, -di/dt = 100A/μs
SYM
A
Characteristic Values
Min.
Typ.
Max.
IS
PIN 1 = Gate
PIN 2 = Source
PIN 3 = Drain
Tap 4 = Electricall isolated 2500V
A1
150
RthCS
ISOPLUS i5-PakTM HV (IXFL) Outline
V
300 ns
T
0.801
0.821
20.34
20.85
2.5
μC
U
0.065
0.080
1.65
2.03
17
A
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFL38N100P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
100
40
VGS = 15V
11V
10V
35
VGS = 15V
11V
90
80
30
ID - Amperes
ID - Amperes
70
25
9V
20
15
10V
60
50
40
9V
30
10
8V
20
5
8V
10
7V
0
0
0
1
2
3
4
5
6
7
8
0
5
10
15
25
30
Fig. 4. RDS(on) Normalized to ID = 19A Value vs.
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
40
3.0
VGS = 15V
10V
35
VGS = 10V
2.6
R DS(on) - Normalized
30
9V
ID - Amperes
20
VDS - Volts
VDS - Volts
25
20
8V
15
10
7V
5
2.2
I D = 38A
1.8
I D = 19A
1.4
1.0
0.6
6V
0
0.2
0
2
4
6
8
10
12
14
16
18
-50
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain
Current
50
75
100
125
150
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
32
2.6
VGS = 10V
2.4
28
15V - - - -
2.2
24
TJ = 125ºC
2.0
ID - Amperes
R DS(on) - Normalized
25
TJ - Degrees Centigrade
1.8
1.6
20
16
12
1.4
8
1.2
TJ = 25ºC
4
1.0
0.8
0
0
10
20
30
40
50
60
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
70
80
90
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFL38N100P
Fig. 8. Transconductance
Fig. 7. Input Admittance
65
60
60
TJ = - 40ºC
55
50
40
45
g f s - Siemens
ID - Amperes
50
TJ = 125ºC
25ºC
- 40ºC
30
20
40
25ºC
35
30
125ºC
25
20
15
10
10
5
0
0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0
10
20
30
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
50
60
70
80
90
450
500
Fig. 10. Gate Charge
16
110
100
VDS = 500V
14
I D = 19A
90
I G = 10mA
12
80
70
VGS - Volts
IS - Amperes
40
ID - Amperes
60
50
TJ = 125ºC
40
30
10
8
6
4
TJ = 25ºC
20
2
10
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
1.3
50
100
150
VSD - Volts
200
250
300
350
400
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000.00
100,000
RDS(on) Limit
Ciss
10,000
ID - Amperes
Capacitance - PicoFarads
1ms
Coss
25µs
100ms
DC
10.00
1,000
100µs
10ms
100.00
1.00
100
TJ = 150ºC
0.10
Crss
TC = 25ºC
Single Pulse
f = 1 MHz
10
0.01
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFL38N100P
Fig. 13. Maximum Transient Thermal Impedance
1.000
Z(th)JC - ºC / W
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_38N100(99)7-14-09-D
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