MSQA6V1W5T2 Quad Array for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. http://onsemi.com MARKING DIAGRAM 5 4 • • • • • SC88A Package Allows Four Separate Unidirectional Configurations Low Leakage < 1 A @ 3 Volt Breakdown Voltage: 6.1 Volt − 7.2 Volt @ 1 mA Low Capacitance (90 pF typical) ESD Protection Meeting IEC1000−4−2 D Specification Features 61 SC−88A/SOT−323 CASE 419A 1 2 3 61 = Device Marking D = One Digit Date Code Mechanical Characteristics • • • • Void Free, Transfer−Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications 1 5 2 3 4 ORDERING INFORMATION Device Package Shipping† MSQA6V1W5T2 SC−88A 3000/Tape & Reel NOTE: T2 Suffix Devices are Packaged with Pin 1 NOTE: Opposing Sprocket Hole. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 November, 2003 − Rev. 3 1 Publication Order Number: MSQA6V1W5T2/D MSQA6V1W5T2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Peak Power Dissipation @ 20 s @TA ≤ 25°C (Note 1) Ppk 150 W Steady State Power − 1 Diode (Note 2) PD 385 mW Thermal Resistance Junction to Ambient Above 25°C, Derate RJA 325 3.1 °C/W mW/°C Maximum Junction Temperature TJmax 150 °C Operating Junction and Storage Temperature Range TJ Tstg −55 to +150 °C VPP 16 16 9 kV TL 260 °C ESD Discharge MIL STD 883C − Method 3015−6 IEC1000−4−2, Air Discharge IEC1000−4−2, Contact Discharge Lead Solder Temperature (10 seconds duration) ELECTRICAL CHARACTERISTICS Breakdown Voltage VBR @ 1 mA (Volts) Min Device Nom Leakage Current IRM @ VRWM = 3 V (A) Max Capacitance @ 0 V Bias (pF) MSQA6V1W5 6.1 6.6 7.2 1.0 90 1. Non−repetitive current per Figure 1. Derate per Figure 2. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR−4 board with min pad. 100 tr 90 % OF PEAK PULSE CURRENT Ppk , PEAK SURGE POWER (WATTS) 1000 100 10 NOTE: Non−Repetitive Surge. Max VF @ IF = 200 mA (V) 1.25 PEAK VALUE IRSM @ 8 s PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s 80 70 60 HALF VALUE IRSM/2 @ 20 s 50 40 30 tP 20 10 1 1 10 100 0 1000 0 20 40 60 t, TIME (s) t, TIME (s) Figure 1. Pulse Width Figure 2. 8 × 20 s Pulse Waveform http://onsemi.com 2 80 100 100 90 90 80 80 TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY OR CURRENT @ TA = 25 ° C MSQA6V1W5T2 70 60 50 40 30 20 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 10 0 200 0 2.0 1.0 TA, AMBIENT TEMPERATURE (°C) Figure 3. Pulse Derating Curve Ipp, PEAK PULSE CURRENT (AMPS) 100 0.1 0.01 0.6 0.7 0.8 1.0 0.9 1.1 10 2.5 s SQUARE WAVE 1.0 1.2 0 5.0 10 15 20 25 VF, FORWARD VOLTAGE (VOLTS) VC, CLAMPING VOLTAGE (VOLTS) Figure 5. Forward Voltage Figure 6. Clamping Voltage versus Peak Pulse Current (Reverse Direction) Ipp, PEAK FORWARD PULSE CURRENT (AMPS) IF , FORWARD CURRENT (A) 5.0 Figure 4. Capacitance 1.0 0.001 4.0 3.0 BIAS VOLTAGE (VOLTS) 100 10 1.0 2.5 s SQUARE WAVE 0.1 0 2.0 4.0 6.0 8.0 10 VC, FORWARD CLAMPING VOLTAGE (VOLTS) Figure 7. Clamping Voltage versus Peak Pulse Current (Forward Direction) http://onsemi.com 3 12 30 MSQA6V1W5T2 PACKAGE DIMENSIONS SC−88A/SOT−323 5−LEAD PACKAGE CASE 419A−02 ISSUE G A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 3 D 5 PL 0.2 (0.008) M B M N J DIM A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C H K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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