ONSEMI 2N6547

ON Semiconductor
SWITCHMODE Series NPN
Silicon Power Transistors
2N6547
The 2N6547 transistor is designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. They
are particularly suited for 115 and 220 volt line operated switch–mode
applications such as:
15 AMPERE
NPN SILICON
POWER TRANSISTORS
300 and 400 VOLTS
175 WATTS
•
•
•
•
Switching Regulators
PWM Inverters and Motor Controls
Solenoid and Relay Drivers
Deflection Circuits
Specification Features
• High Temperature Performance Specified for:
CASE 1–07
TO–204AA
(TO–3)
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
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MAXIMUM RATINGS (1)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO(sus)
400
Vdc
Collector–Emitter Voltage
VCEX(sus)
450
Vdc
Collector–Emitter Voltage
VCEV
850
Vdc
Emitter Base Voltage
VEB
9.0
Vdc
Collector Current — Continuous
— Peak (2)
IC
ICM
15
30
Adc
Base Current — Continuous
— Peak (2)
IB
IBM
10
20
Adc
Emitter Current — Continuous
— Peak (2)
IE
IEM
25
35
Adc
Total Power Dissipation
@ TC = 25C
@ TC = 100C
Derate above 25C
PD
Operating and Storage Junction Temperature Range
Watts
175
100
1.0
W/C
TJ, Tstg
–65 to +200
C
Symbol
Max
Unit
RθJC
1.0
C/W
TL
275
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
 Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 6
1
Publication Order Number:
2N6547/D
2N6547
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*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
300
400
—
—
350
450
200
300
—
—
—
—
—
—
1.0
4.0
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage
(IC = 100 mA, IB = 0)
VCEO(sus)
2N6546
2N6547
Collector–Emitter Sustaining Voltage
(IC = 8.0 A, Vclamp = Rated VCEX, TC = 100C)
Vdc
VCEX(sus)
2N6546
2N6547
2N6546
2N6547
(IC = 15 A, Vclamp = Rated VCEO = 100 V,
TC = 100C)
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100C)
ICEV
mAdc
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100C)
ICER
—
5.0
mAdc
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
IS/b
0.2
—
Adc
12
6.0
60
30
—
—
—
1.5
5.0
2.5
—
—
1.6
1.6
fT
6.0
28
MHz
Cob
125
500
pF
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
t = 1.0 s (non–repetitive) (VCE = 100 Vdc)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 Adc, VCE = 2.0 Vdc)
(IC = 10 Adc, VCE = 2.0 Vdc)
hFE
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
(IC = 15 Adc, IB = 3.0 Adc)
(IC = 10 Adc, IB = 2.0 Adc, TC = 100C)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
(IC = 10 Adc, IB = 2.0 Adc, TC = 100C
VBE(sat)
—
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz)
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2
2N6547
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SWITCHING CHARACTERISTICS
Resistive Load
Delay Time
Rise Time
Storage Time
td
—
0.05
µs
tr
—
1.0
µs
ts
—
4.0
µs
tf
—
0.7
µs
(IC = 10 A(
A(pk),
k), Vclam
clamp = Rated VCEX, IB1 = 2.0 A,
VBE(off) = 5.0 Vdc, TC = 100C)
ts
—
5.0
µs
tf
—
1.5
µs
(IC = 10 A(
A(pk),
k), Vclam
clamp = Rated VCEX, IB1 = 2.0 A,
VBE(off) = 5.0 Vdc, TC = 25C)
ts
2.0
µs
tf
0.09
µs
(VCC = 250 V, IC = 10 A,
IB1 = IB2 = 2.0
2 0 A,
A tp = 100 µs,
µs
Duty Cycle 2.0%)
Fall Time
Inductive Load, Clamped
Storage Time
Fall Time
Typical
Storage Time
Fall Time
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
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3
2N6547
TYPICAL ELECTRICAL CHARACTERISTICS
hFE, DC CURRENT GAIN
70
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
TJ = 150°C
50
25°C
30
20
-55°C
10
VCE = 2.0 V
VCE = 10 V
7.0
5.0
0.2
0.3
0.5
1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMP)
20
10
2.0
TJ = 25°C
1.6
1.2
IC = 2.0 A
1.0
0.6
VBE(on) @ VCE = 2.0 V
0.4
0.2
VCE(sat) @ IC/IB = 5
0
0.2 0.3
0.5
3.0 k
2.0 k
1.0
2.0
3.0
5.0 7.0 10
20
0.4
0
0.07 0.1
2.5
2.0
*APPLIES FOR IC/IB 1.5
1.0
25°C to 150°C
*θVC for VCE(sat)
0.5
[email protected] 2.0V
3
0
-55°C to 25°C
-0.5
25°C to 150°C
-1.0
θVB for VBE
-1.5
-55°C to 25°C
-2.0
-2.5
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
Figure 3. “On” Voltages
Figure 4. Temperature Coefficients
tr
10 k
7.0 k
5.0 k
VCC = 250 V
IC/IB = 5.0
TJ = 25°C
20
ts
3.0 k
300
200
30
0.02
5.0 7.0
IC, COLLECTOR CURRENT (AMP)
1.0 k
700
500
100
70
50
2.0 3.0
0.2 0.3
0.5 0.7 1.0
IB, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
t, TIME (ns)
t, TIME (ns)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 5.0
15 A
Figure 2. Collector Saturation Region
1.4
0.8
10 A
0.8
Figure 1. DC Current Gain
1.2
5.0 A
td @ VBE(off) = 5.0 V
2.0 k
1.0 k
700
tf
500
300
VCC = 250 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
200
0.05
5.0
0.1 0.2
1.0 2.0
0.5
IC, COLLECTOR CURRENT (AMP)
10
100
20
0.02
Figure 5. Turn–On Time
0.05
0.1
0.2
0.5 1.0 2.0
5.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
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4
10
20
2N6547
MAXIMUM RATED SAFE OPERATING AREAS
20
10 ms
20
10
5.0 ms
5.0
1.0 ms
100 µs
dc
2.0
1.0
0.5
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
50
TC = 25°C
0.2
0.1
0.05
BONDING WIRE LIMITED
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
0.02
2N6546
2N6547
0.01 CURVES APPLY BELOW RATED VCEO
0.005
50 70 100
200 300 400
5.0 7.0 10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TURN OFF LOAD LINE
BOUNDARY FOR 2N6547.
FOR 2N6546, VCEO AND
VCEX ARE 100 VOLTS LESS.
16
12
VCEX(sus)
8.0
8.0 V
4.0
0
0
POWER DERATING FACTOR (%)
SECOND BREAKDOWN
DERATING
60
THERMAL DERATING
40
20
0
40
80
120
160
TC, CASE TEMPERATURE (°C)
200
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 9. Power Derating
1.0
0.7
0.5
0.3
0.2
500
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 7 may be found at
any case temperature by using the appropriate curve on
Figure 9.
TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
100
0
100
400
200
300
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Reverse Bias Safe Operating Area
Figure 7. Forward Bias Safe Operating Area
80
VCEO(sus)
VCEX(sus)
VBE(off) 5 V
TC 100°C
D = 0.5
0.2
0.1
0.1
0.07
0.05
P(pk)
ZθJC (t) = r(t) RθJC
RθJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
Figure 10. Thermal Response
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5
20
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500 1.0 k
2N6547
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
C
–T–
E
D
SEATING
PLANE
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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6
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
2N6547
Notes
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7
2N6547
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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