MOTOROLA MRF19030LR3 The rf mosfet line rf power field effect transistors n-channel enhancement-mode lateral mosfet Datasheet

MOTOROLA
Freescale Semiconductor, Inc.
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by MRF19030/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
MRF19030LR3
MRF19030LSR3
RF Power Field Effect Transistors
Freescale Semiconductor, Inc...
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for class AB PCN and PCS base station applications with
frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
• CDMA Performance @ 1990 MHz, 26 Volts
IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — - 47 dBc @ 30 kHz BW
1.25 MHz — - 55 dBc @ 12.5 kHz BW
2.25 MHz — - 55 dBc @ 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
2.0 GHz, 30 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF19030LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF19030LSR3
MAXIMUM RATINGS
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
83.3
0.48
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
2.1
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Class
2 (Minimum)
Machine Model
M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 10
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
For More Information On This Product,
Go to: www.freescale.com
MRF19030LR3 MRF19030LSR3
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µA)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 300 mA)
VGS(Q)
2
3.3
4.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
37
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.3
—
pF
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
Gps
—
13
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
η
—
36
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IMD
—
- 31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IRL
—
- 13
—
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Gps
12
13
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
η
33
36
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IMD
—
- 31
- 28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IRL
—
- 13
-9
dB
OFF CHARACTERISTICS
Freescale Semiconductor, Inc...
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 300 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF19030LR3 MRF19030LSR3
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
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Freescale Semiconductor, Inc.
VGG
+
C2
B1
B2
R3
R1
R2
R4
C3
C4
+
C6
C9
B3
B4
B5
R5
R6
R7
C5
Z6
Z7
Z9
Z8
Z5
Z1
Z2
Z3
C8
Z10
RF
OUTPUT
C7
Z4
C1
+
L3
L2
RF
INPUT
VDD
DUT
L4
C10
Freescale Semiconductor, Inc...
L1
B1 - B5
C1, C7
C2, C8
C3, C5
C4, C6
C9
C10
L1 - L4
R1 - R7
Z1
Z2
Short Ferrite Beads
10 pF Chip Capacitors, B Case
470 µF, 35 V Electrolytic Capacitors
0.1 µF Chip Capacitors, B Case
5.1 pF Chip Capacitors, B Case
22 µF Tantalum Chip Capacitor
0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim
12.5 nH Inductors
12 Ω Chip Resistors (0805)
0.080″ x 0.595″ Microstrip
0.080″ x 0.600″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Substrate
0.080″
0.325″
0.510″
0.510″
0.325″
0.080″
0.080″
0.080″
0.030″
Arlon
x 0.480″ Microstrip
x 0.280″ Microstrip
x 0.200″ Microstrip
x 0.200″ Microstrip
x 0.280″ Microstrip
x 0.480″ Microstrip
x 0.530″ Microstrip
x 0.671″ Microstrip
x 3.00″ x 5.00″ Glass Teflon,
Figure 1. MRF19030LR3(LSR3) Test Circuit Schematic
C2
C8
C3
R1
B2
B1
R2
C5
R6
B4
C4
R3 R4
B3 R5
C9
L2
L3
C6
C7
C1
L1
R7
B5
L4
C10
MRF19030
Rev. 0
Figure 2. MRF19030LR3(LSR3) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MRF19030LR3 MRF19030LSR3
3
Freescale Semiconductor, Inc.
−15
η
20
−20
VDD = 26 Vdc
IDQ = 300 mA, Pout = 30 W (PEP)
Two−Tone Measurement, 100 kHz Tone Spacing
−25
Gps
10
−30
IMD
0
1900
1920
1940
1960
1980
f, FREQUENCY (MHz)
2000
−35
2020
VDD = 26 Vdc
IDQ = 350 mA, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz),
1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
40
35
−50
2.25 MHz
25
885 kHz
20 1.25 MHz
−70
15
Gps
−80
10
CDMA 9 Channels Forward
PILOT:0, PAGING:1, TRAFFIC:8−13, SYNC:32
−90
5
0
2
4
6
8
10
Pout, OUTPUT POWER (WATTS Avg.) CDMA
−40
300 mA
400 mA
−45
350 mA
−50
300 mA
−55
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
100
VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
−30
3rd Order
−40
−50
5th Order
7th Order
−60
−70
−80
1.0
Figure 5. Intermodulation Distortion
versus Output Power
10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 6. Intermodulation Distortion Products
versus Output Power
15
−22
14
G ps , POWER GAIN (dB)
400 mA
350 mA
300 mA
13
300 mA
200 mA
f = 1960 MHz
IDQ = 300 mA, Pout = 30 W (PEP)
Two−Tone Measurement, 100 kHz Tone Spacing
13.5
−24
−26
Gps
−28
−30
13
IMD
−32
−34
12.5
VDD = 26 Vdc, f = 1960 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
11
1.0
−100
12
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
200 mA
12
−60
η
−20
VDD = 26 Vdc, f = 1960 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
−35
14
−40
30
−25
−30
−30
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
MRF19030LR3 MRF19030LSR3
4
−36
12
20
22
24
26
28
30
32
−38
34
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MOTOROLA RF DEVICE DATA
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IMD, INTERMODULATION DISTORTION (dBc)
30
−20
45
ADJACENT CHANNEL POWER RATION (dB)
IRL
40
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
−10
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
50
Figure 3. Class AB Broadband Circuit Performance
G ps , POWER GAIN (dB)
Freescale Semiconductor, Inc...
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Freescale Semiconductor, Inc.
f = 1990 MHz
f = 1990 MHz
Zload
Zsource
f = 1930 MHz
Freescale Semiconductor, Inc...
f = 1930 MHz
Zo = 25 Ω
VDD = 26 V, IDQ = 300 mA, Pout = 30 W PEP
f
MHz
Zsource
Ω
Zload
Ω
1930
10.57 - j7.69
5.81 - j5.01
1960
10.54 - j7.43
5.84 - j4.67
1990
10.47 - j7.21
5.84 - j4.35
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
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MRF19030LR3 MRF19030LSR3
5
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
NOTES
MRF19030LR3 MRF19030LSR3
6
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X
G
bbb
Q
M
T B
M
A
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
2X K
3
B
2
2X D
bbb
M
T A
M
B
M
N (LID)
Freescale Semiconductor, Inc...
ccc
M
T A
B
M
ccc
M
aaa
M
T A
M
B
M
A
2X D
bbb M T A
S
(INSULATOR)
SEATING
PLANE
aaa
A
M
F
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
M
T A
M
H
B
M
B
2
2X K
M
T A
M
N
E
B
R
M
(LID)
ccc
(LID)
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
ccc
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465E - 04
ISSUE E
NI - 400
MRF19030LR3
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
T A
B
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE C
NI - 400S
MRF19030LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
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MRF19030LR3 MRF19030LSR3
7
Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
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E Motorola Inc. 2004
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MRF19030LR3 MRF19030LSR3
8
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MOTOROLA RF DEVICE MRF19030/D
DATA
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