Sanyo ECH8615 P-channel silicon mosfet general-purpose switching device Datasheet

ECH8615
Ordering number : ENA0301
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8615
General-Purpose Switching Device
Applications
Features
•
•
4V drive.
Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
Gate-to-Source Voltage
VGSS
±20
V
--2
A
Drain Current (DC)
ID
V
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
--20
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
1.3
W
Total Power Dissipation
PT
Tch
Mounted on a ceramic board (900mm2✕0.8mm)
Channel Temperature
Storage Temperature
Tstg
1.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
Ratings
min
typ
Unit
max
Zero-Gate Voltage Drain Current
IDSS
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
yfs
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
RDS(on)1
RDS(on)2
ID=--1A, VGS=--10V
ID=--0.5A, VGS=--4V
Input Capacitance
Ciss
660
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
54
pF
42
pF
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
Conditions
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : FH
td(off)
tf
--60
V
±10
µA
µA
--2.6
V
160
210
mΩ
210
295
mΩ
--1
--1.2
2.1
3.5
S
VDS=--20V, f=1MHz
See specified Test Circuit.
10.5
ns
See specified Test Circuit.
7.0
ns
See specified Test Circuit.
93
ns
See specified Test Circuit.
30
ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 12506PE MS IM TB-00001931 No. A0301-1/4
ECH8615
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Total Gate Charge
Qg
nC
Qgs
VDS=--30V, VGS=--10V, ID=--2A
VDS=--30V, VGS=--10V, ID=--2A
15
Gate-to-Source Charge
2.1
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--30V, VGS=--10V, ID=--2A
2.7
Diode Forward Voltage
VSD
IS=--2A, VGS=0V
Package Dimensions
unit : mm
7011A-001
--0.82
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.25
2.9
0.15
5
2.3
4
0.65
1
2
3
4
Top view
0.3
0.9
0.25
2.8
0 to 0.02
1
V
Electrical Connection
Top View
8
nC
--1.2
0.07
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Bottom View
Switching Time Test Circuit
VDD= --30V
VIN
0V
--10V
ID= --1A
RL=30Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
G
ECH8615
P.G
50Ω
S
No. A0301-2/4
ECH8615
ID -- VDS
VDS= --10V
VGS= --2.5V
--0.5
0
--0.6
--0.7
--0.8
--0.9
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--1A
300
ID= --0.5A
200
150
100
50
--2
--4
--6
--8
--10
--12
--14
Gate-to-Source Voltage, VGS -- V
5
5°
=
Ta
1.0
C
--2
7
5
°C
75
°C
25
2
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Drain Current, ID -- A
5
7
--4V
S=
G
V
,
0V
5A
--0.
= --1
S
VG
I D=
A,
--1.0
I D=
250
200
150
100
50
--40
--20
0
20
40
60
80
100
120
140
160
IT10647
IS -- VSD
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.001
--0.2
--0.4
tf
3
2
td(on)
10
7
5
tr
Ciss
5
3
2
100
Coss
7
5
3
2
--1.2
IT10649
1000
Ciss, Coss, Crss -- pF
100
7
5
--1.0
f=1MHz
7
td(off)
--0.8
Ciss, Coss, Crss -- VDS
2
VDD= --30V
VGS= --10V
3
2
--0.6
Diode Forward Voltage, VSD -- V
IT10648
SW Time -- ID
1000
7
5
1.0
--0.01
--3.5
IT10645
--0.01
7
5
3
2
3
0.1
--0.01
300
7
5
3
2
VDS= --10V
2
--3.0
Ambient Temperature, Ta -- °C
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
--16
3
--2.5
350
IT10646
yfs -- ID
10
--2.0
400
0
--60
0
0
--1.5
RDS(on) -- Ta
450
400
250
--1.0
Gate-to-Source Voltage, VGS -- V
Ta=25°C
350
--0.5
IT10644
RDS(on) -- VGS
450
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
--1.0
C
--0.5
C
--0.4
--25°
--0.3
25°
--0.2
Ta=
75°
C
--0.1
Drain-to-Source Voltage, VDS -- V
Switching Time, SW Time -- ns
--1
0
0
7
--2
25° --25
C
°C
--1.0
--3
Ta=
75°
C
--6
.
Drain Current, ID -- A
0V
--10.
--15
.0 V
Drain Current, ID -- A
--1.5
ID -- VGS
--4
--5.
0V
0V -4.0
V
--3
.0V
--2.0
Crss
3
2
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
2
3
5 7
IT10650
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT10651
No. A0301-3/4
ECH8615
VGS -- Qg
--10
3
2
--8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--9
--7
--6
--5
--4
--3
2
3
4
5
6
7
8
9
10 11 12 13 14 15
IT10652
PD -- Ta
1.8
0µ
s
1m
s
ID= --2A
10
DC
ms
10
0m
op
s
era
tio
3
2
3
2
1
10
--1.0
7
5
--1
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
3
2
--2
0
≤10µs
IDP= --20A
--10
7
5
--0.1
7
5
0
ASO
5
VDS= --30V
ID= --2A
Operation in this
area is limited by RDS(on).
n(
Ta
=
25
°C
)
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
--0.01
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 --100
IT10653
Mounted on a ceramic board (900mm2✕0.8mm)
1.6
1.5
1.4
1.3
1.2
To
t
al
1.0
1u
0.8
di
ss
ip
ati
on
nit
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10654
Note on usage : Since the ECH8615 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
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Any and all information described or contained herein are subject to change without notice due to
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for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of January, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0301-4/4
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