Excelics EPA960CR-CP083 High efficiency heterojunction power fet Datasheet

EPA960CR-CP083
High Efficiency Heterojunction Power FET
UPDATED 01/16/2006
FEATURES
G1dB
PAE
●
P1dB
All Dimensions in mil
Tolerance: ± 3 mil
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
EPA
•
•
•
•
•
NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
+38 dBm OUTPUT POWER AT 1dB COMPRESSION
16.5 dB GAIN AT 2 GHz
0.4x9600 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
960CR
•
PARAMETER/TEST CONDITIONS
Output Power at 1dB Compression
f=
Vds = 8 V, Ids=50% Idss
f=
Gain at 1dB Compression
f=
Vds = 8 V, Ids=50% Idss
f=
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f=
2.0 GHz
4.0 GHz
2.0 GHz
4.0 GHz
MIN
TYP
36.5
38.0
38.0
16.5
11.5
15.0
MAX
UNITS
dBm
dB
45
2.0 GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
1760
2880
GM
Transconductance
VDS = 3 V, VGS = 0 V
1920
3120
VP
Pinch-off Voltage
VDS = 3 V, IDS = 28 mA
-1.0
%
3760
mA
mS
-2.5
V
BVGD
Drain Breakdown Voltage
IGD = 9.6 mA
-11
-15
V
BVGS
Source Breakdown Voltage
IGS = 9.6 mA
-7
-14
V
RTH*
Thermal Resistance
o
6*
C/W
Notes: * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE1
CONTINUOUS2
12V
-8V
86.4 mA
14.4 mA
36 dBm
175oC
-65/175oC
25 W
8V
-3V
28.8 mA
4.8 mA
@ 3dB Compression
175oC
-65/175oC
25 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised January 2006
EPA960CR-CP083
High Efficiency Heterojunction Power FET
UPDATED 01/16/2006
FREQ
--- S11 ---
(GHz)
MAG
ANG
0.5
0.969
1.0
S-PARAMETERS
8V, 1/2 Idss
--- S21 ----- S12 ---
--- S22 ---
MAG ANG
MAG
ANG
MAG
ANG
-167.6
8.140
88.4
0.008
24.0
0.814
178.7
0.978
178.4
4.058
73.8
0.011
32.3
0.784
175.2
1.5
0.935
167.8
3.512
66.1
0.016
38.4
0.741
169.4
2.0
0.929
161.0
2.695
57.2
0.021
38.2
0.741
165.6
2.5
0.922
155.5
2.253
49.3
0.025
38.3
0.727
163.4
3.0
0.918
149.8
2.032
40.2
0.030
36.2
0.705
159.7
3.5
0.908
142.2
1.891
30.6
0.037
32.0
0.685
154.5
4.0
0.891
132.4
1.814
19.2
0.045
23.2
0.659
147.7
4.5
0.879
119.7
1.753
5.8
0.052
14.6
0.634
139.9
5.0
0.868
105.9
1.673
-8.2
0.060
5.2
0.623
130.9
5.5
0.859
91.7
1.585
-22.2
0.068
-5.6
0.617
121.2
6.0
0.850
78.2
1.501
-35.7
0.076
-16.6
0.608
112.0
6.5
0.843
64.9
1.461
-46.5
0.084
-23.6
0.565
109.2
7.0
0.825
51.6
1.475
-61.0
0.098
-34.6
0.553
98.3
7.5
0.815
33.9
1.490
-78.4
0.112
-49.5
0.540
81.4
8.0
0.821
12.7
1.415
-98.4
0.119
-66.6
0.521
61.3
8.5
0.850
-6.9
1.253
-116.7
0.120
-82.4
0.546
39.2
9.0
0.877
-22.5
1.087
-133.1
0.114
-98.7
0.593
20.5
9.5
0.892
-33.5
0.928
-145.9
0.108
-110.8
0.609
8.8
10.0
0.902
-43.6
0.852
-153.8
0.111
-118.9
0.665
4.5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised January 2006
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