WINNERJOIN BZM55C5V1 Zener diode Datasheet

RoHS
BZM55C2V0-BZM55C75
D
T
,. L
Zener diode
Features
1. Saving space
2. Fits onto SOD 323/SOT 23 footprints
3. Micro Melf package
Applications
IC
Voltage stabilization
Construction
Silicon epitaxial planar
R
T
Absolute Maximum Ratings
Tj=25℃
Parameter
O
Test Conditions
C
E
L
Power dissipation
Z-current
Junction temperature
N
Type
RthJA≦300K/W
Storage temperature range
E
C
O
Symbol
Value
Unit
PV
500
mW
IZ
PV/VZ
mA
Tj
175
℃
Tstg
-65~+175
℃
Maximum Thermal Resistance
J
E
Tj=25℃
Parameter
Junction ambient
W
Test Conditions
Symbol
Value
Unit
on PC board 50mm×50mm×1.6mm
RthJA
500
K/W
Electrical Characteristics
Tj=25℃
Parameter
Forward voltage
Test Conditions
Type
IF=200mA
WEJ ELECTRONIC CO.
Symbol
VF
Http:// www.wej.cn
Min
Typ
Max
Unit
1.5
V
E-mail:[email protected]
RoHS
BZM55C2V0-BZM55C75
Type
BZM55C.
2V0
2V2
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
VZnom
V
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
J
E
IZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
for VZT and
1)
V
1.9~2.1
2.09~2.31
2.28~2.56
2.5~2.9
2.8~3.2
3.1~3.5
3.4~3.8
3.7~4.1
4.0~4.6
4.4~5.0
4.8~5.4
5.2~6.0
5.8~6.6
6.4~7.2
7.0~7.9
7.7~8.7
8.5~9.6
9.4~10.6
10.4~11.6
11.4~12.7
12.4~14.1
13.8~15.6
15.3~17.1
16.8~19.1
18.8~21.2
20.8~23.3
22.8~25.6
25.1~28.9
28~32
31~35
34~38
37~41
40~46
44~50
48~54
52~60
58~66
64~72
70~79
rzjT
Ω
100
100
<85
<85
<85
<85
<85
<85
<75
<60
<35
<25
<10
<8
<7
<7
<10
<15
<20
<20
<26
<30
<40
<50
<55
<55
<80
<80
<80
<80
<80
<90
<90
<110
<125
<135
<150
<200
<250
R
T
C
E
L
E
rzjK at
Ω
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<550
<450
<200
<150
<50
<50
<50
<70
<70
<90
<110
<110
<170
<170
<220
<220
<220
<220
<220
<220
<220
<500
<600
<700
<700
<1000
<1000
<1000
<1500
IZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
O
IR and IR at
2)
μA
μA
<150 <300
<150 <300
<50
<100
<10
<50
<4
<40
<2
<40
<2
<40
<2
<40
<1
<20
<0.5
<10
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<5
<0.1
<5
<0.1
<5
<0.1
<10
<0.1
<10
<0.1
<10
<0.1
<10
<0.1
<10
N
IC
VR
V
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
C
D
T
,. L
TKVZ
%/K
-0.09~-0.06
-0.09~-0.06
-0.09~-0.06
-0.09~-0.06
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.06~-0.03
-0.05~+0.02
-0.02~+0.02
-0.05~+0.05
0.03~0.06
0.03~0.07
0.03~0.07
0.03~0.08
0.03~0.09
0.03~0.1
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
O
W
1)
BZM55B… ±2% of Vznom
BZM55C… ±5% of VZnom
2)
at Tj=150℃
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
BZM55C2V0-BZM55C75
D
T
,. L
Characteristics (Tj=25℃ unless otherwise specified)
Figure 1. Total Power Dissipation vs. Ambient
Temperature
R
T
C
E
L
Figure 2. Typical Change of Working Voltage under
Operating Conditions at Tamb=25℃
J
E
W
IC
C
O
Figure 4. Typical Change of Working Voltage Vs.
Junction Temperature
O
N
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
E
Figure 3. Diode Capacitance vs. Z-voltage
WEJ ELECTRONIC CO.
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E-mail:[email protected]
RoHS
BZM55C2V0-BZM55C75
Figure 6. Forward Current vs. Forward Voltage
J
E
R
T
C
E
L
Figure 7. Z-Current vs. Z-Voltage
C
D
T
,. L
O
Figure 8. Z-Current vs. Z-Voltage
O
IC
N
Figure 9. Differential Z-Resistance Vz vs. Z-Voltage
E
W
WEJ ELECTRONIC CO.
Figure 10. Thermal Response
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RoHS
BZM55C2V0-BZM55C75
D
T
,. L
Dimensions in mm
Cathode identification
1.35
Φ1.25 - 0.05
Glass
R≥2.5
IC
Glass
1.9±0.1
Glass Case
Micro Melf
J
E
R
T
O
C
O
N
C
E
L
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
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