2N5400, 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage VCBO 130 160 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg 1.5 12 Watts mW/°C −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 12 3 MARKING DIAGRAM 2N 540x AYWWG G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 1 1 Publication Order Number: 2N5400/D 2N5400, 2N5401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 120 150 − − 130 160 − − 5.0 − Vdc − − − − 100 50 100 50 nAdc − 50 nAdc 2N5400 2N5401 30 50 − − (IC = 10 mAdc, VCE = 5.0 Vdc) 2N5400 2N5401 40 60 180 240 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N5400 2N5401 40 50 − − − − 0.2 0.5 − − 1.0 1.0 100 100 400 300 − 6.0 30 40 200 200 − 8.0 OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N5400 2N5401 Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Vdc V(BR)CBO 2N5400 2N5401 Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Vdc ICBO 2N5400 2N5401 2N5400 2N5401 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 2N5400 2N5401 Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MHz hfe 2N5400 2N5401 Noise Figure (IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 pF − dB 2N5400, 2N5401 200 150 h FE , CURRENT GAIN TJ = 125°C 100 25°C 70 50 −55°C VCE = − 1.0 V VCE = − 5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 10 20 50 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (A) μ VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 102 VCE = 30 V IC = ICES 101 TJ = 125°C 100 75°C 10−1 10−2 REVERSE 25°C 10−3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut−Off Region http://onsemi.com 3 0.6 0.7 2N5400, 2N5401 1.0 0.9 θV, TEMPERATURE COEFFICIENT (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 0.8 0.7 VBE(sat) @ IC/IB = 10 0.6 0.5 0.4 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 2.5 1.5 1.0 0.5 qVC for VCE(sat) 0 −0.5 −1.0 −1.5 qVB for VBE(sat) −2.0 −2.5 0.1 100 TJ = − 55°C to 135°C 2.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages 100 70 50 C, CAPACITANCE (pF) VCC −30 V 10.2 V 100 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF 3.0 k RC Vout RB 5.1 k Vin 100 TJ = 25°C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit 1000 700 500 10 20 Figure 7. Capacitances 2000 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V 300 1000 700 500 tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 100 Figure 5. Temperature Coefficients VBB +8.8 V Vin 50 100 70 50 10 0.2 0.3 0.5 td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 tf @ VCC = 120 V tf @ VCC = 30 V 200 ts @ VCC = 120 V 100 70 50 30 20 300 IC/IB = 10 TJ = 25°C 30 50 100 20 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn−On Time Figure 9. Turn−Off Time http://onsemi.com 4 50 100 200 2N5400, 2N5401 ORDERING INFORMATION Device 2N5400 2N5400G 2N5400RLRP 2N5400RLRPG 2N5401 2N5401G 2N5401RL1 Package Shipping† TO−92 5000 Unit / Bulk TO−92 (Pb−Free) 5000 Unit / Bulk TO−92 2000 Tape & Reel TO−92 (Pb−Free) 2000 Tape & Reel TO−92 5000 Unit / Bulk TO−92 (Pb−Free) 5000 Unit / Bulk TO−92 2000 Tape & Reel 2N5401RL1G TO−92 (Pb−Free) 2000 Tape & Reel 2N5401RLRA TO−92 2000 Tape & Reel TO−92 (Pb−Free) 2000 Tape & Reel TO−92 2000 Tape & Ammo Box TO−92 (Pb−Free) 2000 Tape & Ammo Box TO−92 2000 Tape & Ammo Box TO−92 (Pb−Free) 2000 Tape & Ammo Box 2N5401RLRAG 2N5401RLRM 2N5401RLRMG 2N5401ZL1 2N5401ZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 2N5400, 2N5401 PACKAGE DIMENSIONS TO−92 CASE 29−11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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