MMBFJ309LT1, MMBFJ310LT1 JFET − VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 1 DRAIN 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C 1 2 PD SOT−23 (TO−236) CASE 318 STYLE 10 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 6x M G G 1 6x = Device Code x = U for MMBFJ309LT1 x = T for MMBFJ310LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBFJ309LT1 SOT−23 3,000 / Tape & Reel MMBFJ309LT1G MMBFJ310LT1 MMBFJ310LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) SOT−23 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 3 1 Publication Order Number: MMBFJ309LT1/D MMBFJ309LT1, MMBFJ310LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS −25 − − Vdc IGSS − − − − −1.0 −1.0 nAdc mAdc MMBFJ309 MMBFJ310 VGS(off) −1.0 −2.0 − − −4.0 −6.5 Vdc MMBFJ309 MMBFJ310 IDSS 12 24 − − 30 60 mAdc VGS(f) − − 1.0 Vdc Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |Yfs| 8.0 − 18 mmhos Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |yos| − − 250 mmhos Input Capacitance (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss − − 5.0 pF Reverse Transfer Capacitance (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss − − 2.5 pF Equivalent Short−Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) en − 10 − nVń ǸHz OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = −15 Vdc) Gate Reverse Current (VGS = −15 Vdc, TA = 125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate−Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL−SIGNAL CHARACTERISTICS http://onsemi.com 2 70 70 60 I D , DRAIN CURRENT (mA) 60 VDS = 10 V TA = −55°C 50 50 +25 °C IDSS +25 °C 40 40 30 30 +150°C 20 20 +25 °C −55 °C 10 10 +150°C −5.0 −1.0 −4.0 −3.0 −2.0 ID − VGS, GATE−SOURCE VOLTAGE (VOLTS) IDSS − VGS, GATE−SOURCE CUTOFF VOLTAGE (VOLTS) 0 IDSS, SATURATION DRAIN CURRENT (mA) MMBFJ309LT1, MMBFJ310LT1 0 10 1.0 k Yfs Yfs 10 k 100 1.0 k Yos VGS(off) = −2.3 V = VGS(off) = −5.7 V = 10 120 RDS 96 7.0 72 Cgs 4.0 48 24 Cgd 1.0 100 0.01 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0 10 9.0 ID, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 2. Common−Source Output Admittance and Forward Transconductance versus Drain Current Figure 3. On Resistance and Junction Capacitance versus Gate−Source Voltage http://onsemi.com 3 0 0 R DS , ON RESISTANCE (OHMS) 100 k Yos, OUTPUT ADMITTANCE (μ mhos) CAPACITANCE (pF) Yfs , FORWARD TRANSCONDUCTANCE μ ( mhos) Figure 1. Drain Current and Transfer Characteristics versus Gate−Source Voltage MMBFJ309LT1, MMBFJ310LT1 24 |S12|, |S22| 3.0 0.060 1.00 2.4 0.79 0.39 S22 VDS = 10 V ID = 10 mA TA = 25°C 0.048 0.98 S21 Y11 18 1.8 Y21 12 1.2 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25°C 0.67 0.27 0.024 0.94 0.61 0.21 0.6 0.012 0.92 S12 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 0.55 0.15 100 1000 Figure 4. Common−Gate Y Parameter Magnitude versus Frequency q21, q11 180° 50° 40° 160° 30° 150° 20° 140° 10° 200 300 500 f, FREQUENCY (MHz) q11, q12 −20 ° 120° −40 ° 1000 86° −40 ° 100° 85° −60 ° 80° −120 ° 84° −80 ° 60° 0 q11 q21 −20 ° q22 −60 ° −80 ° −40 ° −100 ° q12 q11 130° 0° 100 −140 ° VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) q21 −60 ° q12 −160 ° 83° −100 ° 40° −180 ° 700 0.90 q21, q22 −20 ° q21 700 Figure 5. Common−Gate S Parameter Magnitude versus Frequency q12, q22 −2 0° 87° q22 170° 0.036 0.96 S11 Y22 6.0 Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) 30 |S21|, |S11| 0.85 0.45 −200 ° 82° 1000 −120 ° 20° 100 Figure 6. Common−Gate Y Parameter Phase−Angle versus Frequency VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) q11 700 −80 ° −100 ° 1000 Figure 7. S Parameter Phase−Angle versus Frequency http://onsemi.com 4 MMBFJ309LT1, MMBFJ310LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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