IXYS IXTA60N20T N-channel enhancement mode for pdp drivers avalanche rated Datasheet

IXTA60N20T
IXTP60N20T
IXTQ60N20T
TrenchTM
Power MOSFET
VDSS
ID25
RDS(on)
= 200V
= 60A
Ω
≤ 40mΩ
TO-263 AA (IXTA)
N-Channel Enhancement Mode
For PDP Drivers
Avalanche Rated
G
S
D (Tab)
TO-220AB (IXTP)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
200
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
200
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
60
A
IDM
TC = 25°C, Pulse Width Limited by TJM
150
A
IA
TC = 25°C
30
A
EAS
TC = 25°C
700
mJ
PD
TC = 25°C
500
W
-55 ... +175
°C
TJM
175
°C
Tstg
-55 ... +175
°C
300
260
°C
°C
TJ
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Md
Mounting Torque (TO-220 &TO-3P)
Weight
TO-263
TO-220
TO-3P
1.13 / 10
Nm/lb.in.
2.5
3.0
5.5
g
g
g
G
DS
D (Tab)
TO-3P (IXTQ)
G
D
S
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
z
z
z
z
z
High Current Handling Capability
175°C Operating Temperature
Avalanche Rated
Fast Intrinsic Rectifier
Low RDS(on)
Advantages
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
200
VGS(th)
VDS = VGS, ID = 250μA
3.0
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
VGS = 10V, ID = 0.5 • ID25, Note 1
z
V
5.0
V
32
z
z
1 μA
z
40 mΩ
z
z
z
z
z
© 2010 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
Applications
±200 nA
250 μA
TJ = 150°C
RDS(on)
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS99359B(7/10)
IXTA60N20T IXTP60N20T
IXTQ60N20T
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
gfs
40
VDS = 10V, ID = 0.5 • ID25, Note 1
TO-220 (IXTP) Outline
62
S
4530
pF
490
pF
72
pF
22
ns
13
ns
33
ns
tf
22
ns
Qg(on)
73
nC
22
nC
22
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
Qgs
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
RthCS
Pins:
1 - Gate
3 - Source
2 - Drain
0.30 °C/W
TO-220
TO-3P
0.50
0.25
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Characteristic Values
Min. Typ.
Max.
60
A
Repetitive, Pulse Width Limited by TJM
240
A
VSD
IF = 60A, VGS = 0V, Note 1
1.3
V
trr
IF = 0.5 • ID25, VGS = 0V
IRM
QRM
Note
-di/dt = 100A/μs
VR = 85V
118
ns
9.3
A
550
nC
TO-3P (IXTQ) Outline
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Bottom Side
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA60N20T IXTP60N20T
IXTQ60N20T
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
60
200
VGS = 15V
10V
8V
50
160
7V
ID - Amperes
30
8V
140
40
ID - Amperes
VGS = 15V
10V
180
6V
20
120
7V
100
80
60
6V
40
10
20
5V
5V
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
2
4
6
8
12
14
16
18
20
Fig. 4. RDS(on) Normalized to ID = 30A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 150ºC
60
3.4
VGS = 15V
10V
7V
VGS = 10V
3.0
R DS(on) - Normalized
50
40
ID - Amperes
10
VDS - Volts
VDS - Volts
6V
30
20
5V
2.6
I D = 60A
2.2
I D = 30A
1.8
1.4
1.0
10
0.6
4V
0
0.2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-50
-25
0
VDS - Volts
25
50
75
100
125
150
175
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 30A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
70
5.0
VGS = 10V
4.5
TJ = 175ºC
60
50
3.5
ID - Amperes
R DS(on) - Normalized
4.0
3.0
2.5
TJ = 25ºC
2.0
40
30
20
1.5
10
1.0
0.5
0
0
20
40
60
80
100
120
140
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
160
180
200
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
IXTA60N20T IXTP60N20T
IXTQ60N20T
Fig. 7. Input Admittance
Fig. 8. Transconductance
120
120
100
100
g f s - Siemens
ID - Amperes
80
TJ = 150ºC
25ºC
- 40ºC
60
TJ = - 40ºC
80
25ºC
60
150ºC
40
40
20
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
7.0
20
40
Fig. 9. Forward Voltage Drop of Intrinsic Diode
80
100
120
140
Fig. 10. Gate Charge
180
10
160
9
VDS = 100V
I D = 30A
8
140
I G = 10mA
7
VGS - Volts
120
IS - Amperes
60
ID - Amperes
VGS - Volts
100
80
6
5
4
TJ = 150ºC
60
3
40
TJ = 25ºC
2
20
1
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1.2
10
20
VSD - Volts
30
40
50
60
70
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
10,000
1.00
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
Ciss
Coss
0.10
100
Crss
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_60N20T(5G)02-10-10
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