ONSEMI MC74HC139ADR2

MC74HC139A
Dual 1−of−4 Decoder/
Demultiplexer
High−Performance Silicon−Gate CMOS
The MC74HC139A is identical in pinout to the LS139. The device
inputs are compatible with standard CMOS outputs; with pull−up
resistors, they are compatible with LSTTL outputs.
This device consists of two independent 1−of−4 decoders, each of
which decodes a two−bit Address to one−of−four active−low outputs.
Active−low Selects are provided to facilitate the demultiplexing and
cascading functions. The demultiplexing function is accomplished by
using the Address inputs to select the desired device output, and
utilizing the Select as a data input.
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MARKING
DIAGRAMS
16
PDIP−16
N SUFFIX
CASE 648
16
1
1
Features
•
•
•
•
•
•
•
•
MC74HC139AN
AWLYYWWG
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 100 FETs or 25 Equivalent Gates
Pb−Free Packages are Available*
16
SOIC−16
D SUFFIX
CASE 751B
16
1
HC139AG
AWLYWW
1
16
16
1
TSSOP−16
DT SUFFIX
CASE 948F
HC
139A
ALYWG
G
1
16
16
1
SOEIAJ−16
F SUFFIX
CASE 966
74HC139A
ALYWG
1
A
= Assembly Location
L, WL
= Wafer Lot
Y, YY
= Year
W, WW = Work Week
G
= Pb−Free Package
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 9
1
Publication Order Number:
MC74HC139A/D
MC74HC139A
ADDRESS
INPUTS
SELECTa
1
16
VCC
A0a
2
15
SELECTb
A1a
3
14
A0b
Y0a
4
13
A1b
Y1a
5
12
Y0b
Y2a
6
11
Y1b
Y3a
7
10
Y2b
GND
8
9
Y3b
A0a
A1a
2
4
3
5
6
7
A0b
A1b
Y2a
14
12
13
11
9
Figure 1. Pin Assignment
ACTIVE−LOW
OUTPUTS
Y3a
PIN 16 = VCC
PIN 8 = GND
10
SELECTb
Y1a
1
SELECTa
ADDRESS
INPUTS
Y0a
Y0b
Y1b
Y2b
ACTIVE−LOW
OUTPUTS
Y3b
15
Figure 2. Logic Diagram
FUNCTION TABLE
Inputs
Outputs
Select
A1
A0
Y0
Y1 Y2
Y3
H
L
L
L
L
X
L
L
H
H
X
L
H
L
H
H
L
H
H
H
H
H
L
H
H
H
H
H
H
L
H
H
H
L
H
X = don’t care
ORDERING INFORMATION
Package
Shipping †
MC74HC139AN
PDIP−16
2000 Units / Box
MC74HC139ANG
PDIP−16
(Pb−Free)
2000 Units / Box
MC74HC139AD
SOIC−16
48 Units / Rail
MC74HC139ADG
SOIC−16
(Pb−Free)
48 Units / Rail
MC74HC139ADR2
SOIC−16
2500 Units / Reel
MC74HC139ADR2G
SOIC−16
(Pb−Free)
2500 Units / Reel
MC74HC139ADTR2
TSSOP−16*
2500 Units / Reel
MC74HC139ADTR2G
TSSOP−16*
2500 Units / Reel
MC74HC139AFEL
SOEIAJ−16
2000 Units / Reel
MC74HC139AFELG
SOEIAJ−16
(Pb−Free)
2000 Units / Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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2
MC74HC139A
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
(Referenced to GND)
0.5 to 7.0
V
VIN
DC Input Voltage
(Referenced to GND)
1.5 to VCC 1.5
V
VOUT
DC Output Voltage
(Referenced to GND) (Note 1)
0.5 to VCC
0.5
V
DC Input Current, per Pin
20
mA
IOUT
DC Output Current, per Pin
25
mA
ICC
DC Supply Current, VCC Pin
50
mA
IGND
DC Ground Current per Ground Pin
50
mA
TSTG
Storage Temperature Range
65 to 150
_C
260
_C
IIN
TL
Lead Temperature, 1 mm from Case for 10 Seconds
TJ
Junction Temperature Under Bias
150
_C
qJA
Thermal Resistance
PDIP
SOIC
TSSOP
78
112
148
_C/W
PD
Power Dissipation in Still Air at 85_C
PDIP
SOIC
TSSOP
750
500
450
mW
MSL
Moisture Sensitivity
FR
Flammability Rating
VESD
ILATCHUP
Level 1
Oxygen Index: 30% − 35%
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
2000
200
1000
V
Above VCC and Below GND at 85_C (Note 5)
300
mA
ESD Withstand Voltage
Latchup Performance
UL 94 V−0 @ 0.125 in
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. IO absolute maximum rating must be observed.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
6. For high frequency or heavy load considerations, see Chapter 2the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
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Symbol
VCC
VIN, VOUT
Parameter
Min
Max
Unit
DC Supply Voltage
(Referenced to GND)
2.0
6.0
V
DC Input Voltage, Output Voltage
(Referenced to GND)
0
VCC
V
55
125
_C
0
0
0
1000
500
400
ns
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 3)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
7. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.
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3
MC74HC139A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
VCC
Guaranteed Limit
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Symbol
Parameter
Test Conditions
V
*55_C to 25_C
85_C
125_C
Unit
VIH
Minimum High−Level Input
Voltage
VOUT = 0.1 V or VCC 0.1 V
|IOUT| 20 mA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VIL
Maximum Low−Level Input
Voltage
VOUT = 0.1 V or VCC 0.1 V
|IOUT| 20 mA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
VOH
Minimum High−Level Output
Voltage
VIN = VIH or VIL
|IOUT| 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
VIN = VIH or VIL
VOL
Maximum Low−Level Output
Voltage
|IOUT| 4.0 mA
|IOUT| 5.2 mA
VIN = VIH or VIL
|IOUT| 20 mA
VIN = VIH or VIL
|IOUT| 4.0 mA
|IOUT| 5.2 mA
V
IIN
Maximum Input Leakage
Current
VIN = VCC or GND
6.0
0.1
1.0
1.0
mA
ICC
Maximum Quiescent Supply
Current (per Package)
VIN = VCC or GND
IOUT = 0 mA
6.0
4
40
160
mA
8. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
VCC
Guaranteed Limit
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Symbol
Parameter
V
*55_C to 25_C
85_C
125_C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Select to Output Y
(Figures 1 and 3)
2.0
4.5
6.0
115
23
20
145
29
25
175
35
30
ns
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 2 and 3)
2.0
4.5
6.0
115
23
20
145
29
25
175
35
30
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
−
10
10
10
pF
Cin
Maximum Input Capacitance
9. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Decoder) (Note 10)
10. Used to determine the no−load dynamic power consumption: PD = CPD VCC
Semiconductor High−Speed CMOS Data Book (DL129/D).
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4
55
2f
pF
I CC V CC . For load considerations, see the ON
MC74HC139A
tf
tr
VALID
VCC
90%
50%
SELECT
10%
VCC
INPUT A
GND
tPHL
50%
GND
tPLH
tPHL
tPLH
90%
50%
10%
OUTPUT Y
VALID
50%
OUTPUT Y
tTLH
tTHL
Figure 3. Switching Waveform
Figure 4. Switching Waveform
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
CL*
* Includes all probe and jig capacitance
Figure 5. Test Circuit
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5
MC74HC139A
PIN DESCRIPTIONS
ADDRESS INPUTS
inputs. A high level on this input forces all outputs to a high
level.
A0a, A1a, A0b, A1b (Pins 2, 3, 14, 13)
OUTPUTS
Address inputs. These inputs, when the respective 1−of−4
decoder is enabled, determine which of its four active−low
outputs is selected.
Y0a − Y3a, Y0b − Y3b (Pins 4 − 7, 12, 11, 10, 9)
Active−low outputs. These outputs assume a low level
when addressed and the appropriate Select input is active.
These outputs remain high when not addressed or the
appropriate Select input is inactive.
CONTROL INPUTS
Selecta, Selectb (Pins 1, 15)
Active−low select inputs. For a low level on this input, the
outputs for that particular decoder follow the Address
SELECT
Y0
Y1
A0
Y2
Y3
A1
Figure 6. Expanded Logic Diagram
(1/2 of Device)
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6
MC74HC139A
PACKAGE DIMENSIONS
PDIP−16
N SUFFIX
CASE 648−08
ISSUE T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE
MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
−A−
16
9
1
8
B
F
C
L
DIM
A
B
C
D
F
G
H
J
K
L
M
S
S
−T−
SEATING
PLANE
K
H
D
M
J
G
16 PL
0.25 (0.010)
T A
M
M
INCHES
MIN
MAX
0.740 0.770
0.250 0.270
0.145 0.175
0.015 0.021
0.040
0.70
0.100 BSC
0.050 BSC
0.008 0.015
0.110 0.130
0.295 0.305
0_
10 _
0.020 0.040
MILLIMETERS
MIN
MAX
18.80 19.55
6.35
6.85
3.69
4.44
0.39
0.53
1.02
1.77
2.54 BSC
1.27 BSC
0.21
0.38
2.80
3.30
7.50
7.74
0_
10 _
0.51
1.01
SOIC−16
D SUFFIX
CASE 751B−05
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
−A−
16
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
M
T B
S
A
S
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7
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
MC74HC139A
PACKAGE DIMENSIONS
TSSOP−16
DT SUFFIX
CASE 948F−01
ISSUE A
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
ÇÇÇ
ÉÉÉ
ÇÇÇ
ÉÉÉ
ÇÇÇ
K
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
8
1
N
0.15 (0.006) T U
S
0.25 (0.010)
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
M
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
H
D
DETAIL E
G
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8
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
MC74HC139A
PACKAGE DIMENSIONS
SOEIAJ−16
F SUFFIX
CASE 966−01
ISSUE O
16
LE
9
Q1
M_
E HE
1
8
L
DETAIL P
Z
D
e
VIEW P
A
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
A1
b
0.13 (0.005)
c
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
0.10 (0.004)
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9
MILLIMETERS
MIN
MAX
−−−
2.05
0.05
0.20
0.35
0.50
0.18
0.27
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 _
0_
0.70
0.90
−−−
0.78
INCHES
MIN
MAX
−−− 0.081
0.002
0.008
0.014
0.020
0.007
0.011
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 _
0_
0.028
0.035
−−− 0.031
MC74HC139A
ON Semiconductor and
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MC74HC139A/D