Fairchild FQH90N15 N-channel power mosfet Datasheet

®
FQH90N15 / FQA90N15
N-Channel Power MOSFET
Features
Description
• 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge (typical 220 nC)
• Low Crss (typical 200 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted
power supply.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
!
"
G!
G D
S
TO-247
FQH Series
G DS
! "
"
"
TO-3P
!
FQA Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
FQH90N15/FQA90N15
Unit
150
V
90
63.5
A
A
360
A
±25
V
Single Pulsed Avalanche Energy
(Note 2)
1400
mJ
Avalanche Current
(Note 1)
90
A
EAR
Repetitive Avalanche Energy
(Note 1)
37.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
6.0
V/ns
PD
Power Dissipation
375
2.5
W
W/°C
-55 to +175
°C
300
°C
(Note 1)
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2004 Fairchild Semiconductor Corporation
FQH90N15 / FQA90N15 Rev. B
1
Min.
Max.
Unit
--
0.4
°C/W
0.24
--
°C/W
--
40
°C/W
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
QFET
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
150
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.15
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 150V, VGS = 0V
VDS = 120V, TC = 150°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 25V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25V, VDS = 0V
--
--
-100
nA
2.0
--
4.0
V
--
0.014
0.018
Ω
--
68
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 45A
gFS
Forward Transconductance
VDS = 40V, ID = 45A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
6700
8700
pF
--
1400
1800
pF
--
200
260
pF
--
105
220
ns
--
760
1500
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 75V, ID = 90A
RG = 25Ω
(Note 4, 5)
VDS = 120V, ID = 90A
VGS = 10V
(Note 4, 5)
--
470
950
ns
--
410
830
ns
--
220
285
nC
--
43
--
nC
--
110
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
90
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
360
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 90A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 90A
dIF/dt =100A/µs
(Note 4)
--
175
--
ns
--
0.97
--
µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.29mH, IAS = 90A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 90A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
FQH90N15 / FQA90N15 Rev. B
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
2
ID, Drain Current [A]
10
ID , Drain Current [A]
Top :
1
10
10
2
10
1
10
0
o
175 C
o
25 C
o
-55 C
Notes :
1. VDS = 30V
Notes :
1. 250µs Pulse Test
o
2. TC = 25 C
-1
0
10
2. 250µs Pulse Test
10
1
10
-1
2
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
IDR , Reverse Drain Current [A]
RDS(on) [Ω],
Drain-Source On-Resistance
0.12
0.09
VGS = 10V
0.06
VGS = 20V
0.03
2
10
1
10
0
10
o
175 C 25oC
Notes :
1. VGS = 0V
o
Note : TJ = 25 C
2. 250µs Pulse Test
0.00
-1
0
50
100
150
200
250
10
300
0.0
0.4
0.8
ID , Drain Current [A]
1.2
1.6
2.0
2.4
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
18000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
12000
Ciss
Coss
9000
6000
Notes :
1. VGS = 0 V
Crss
2. f = 1 MHz
3000
V DS = 30V
10
VGS, Gate-Source Voltage [V]
Capacitance [pF]
15000
V DS = 75V
VDS = 120V
8
6
4
2
Note : ID = 90 A
0
0
-1
10
0
10
0
1
10
3
FQH90N15 / FQA90N15 Rev. B
50
100
150
200
250
Q G, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250 µA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
Notes :
1. V GS = 10 V
0.5
2. ID = 45 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
50
100
150
200
150
175
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
100
Operation in This Area
is Limited by R DS(on)
3
10
10
ID, Drain Current [A]
ID, Drain Current [A]
80
10 µs
100 µs
2
1 ms
DC
10 ms
1
10
Notes :
o
1. TC = 25 C
0
10
60
40
20
o
2. TJ = 175 C
3. Single Pulse
0
25
-1
10
0
1
10
2
10
10
50
75
100
125
o
T C, Case Temperature [ C]
VDS, Drain-Source Voltage [V]
D = 0 .5
10
-1
N o te s :
1 . Z ? JC ( t) = 0 .4
0 .2
o
C /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
0 .1
3 . T JM - T C = P DM * Z ?
JC
(t)
0 .0 5
PDM
0 .0 2
10
0 .0 1
-2
t1
s in g le p u ls e
Z
θJC
(t), Thermal Response
Figure 11. Transient Thermal Response Curve
10
-5
10
-4
10
t2
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
4
FQH90N15 / FQA90N15 Rev. B
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Typical Performance Characteristics (Continued)
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
tp
5
FQH90N15 / FQA90N15 Rev. B
VDS (t)
VDD
DUT
10V
ID (t)
Time
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
6
FQH90N15 / FQA90N15 Rev. B
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
7
FQH90N15 / FQA90N15 Rev. B
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Mechanical Dimensions (Continued)
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
8
FQH90N15 / FQA90N15 Rev. B
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I14
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