APTGT300A120G Phase leg Fast Trench + Field Stop IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control VBUS Q1 G1 E1 Features • Fast Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration OUT Q2 G2 E2 0/VBUS G1 VBUS 0/VBUS VCES = 1200V IC = 300A @ Tc = 80°C OUT Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E1 E2 G2 Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 600A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A August, 2009 IC Max ratings 1200 420 300 600 ±20 1380 RBSOA Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300A120G – Rev 2 Symbol VCES APTGT300A120G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 300A Tj = 125°C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Min Typ 1.4 1.7 2.0 5.8 5.0 Max Unit 500 2.1 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 300A RG = 1.8Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A RG = 1.8Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C RG = 1.8Ω Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Min Typ 21 1.2 0.9 260 30 420 nF ns 70 290 50 520 ns 90 30 mJ 30 Reverse diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy VR=1200V IF = 300A VGE = 0V IF = 300A VR = 600V di/dt =3000A/µs www.microsemi.com Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C 300 1.6 1.6 Tj = 25°C 170 Tj = 125°C Tj = 25°C 280 27 Tj = 125°C Tj = 25°C Tj = 125°C 54 15 27 Max 500 700 Unit V µA A 2.1 V ns µC August, 2009 IRM Test Conditions mJ 2-5 APTGT300A120G – Rev 2 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT300A120G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 4000 -40 -40 -40 3 2 Typ Max 0.09 0.17 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT300A120G – Rev 2 August, 2009 SP6 Package outline (dimensions in mm) APTGT300A120G Typical Performance Curve Output Characteristics (VGE=15V) 600 VGE=17V TJ=125°C 400 300 VGE=15V 300 200 200 100 100 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 600 1 50 TJ=125°C E (mJ) 300 TJ=125°C 4 Eon Eoff Er 37.5 Eon 25 200 3 VCE = 600V VGE = 15V RG = 1.8Ω TJ = 125°C 62.5 400 2 VCE (V) Energy losses vs Collector Current 75 TJ=25°C 500 12.5 100 0 0 5 6 7 8 9 10 11 0 12 100 Switching Energy Losses vs Gate Resistance 400 500 600 700 VCE = 600V VGE =15V IC = 300A TJ = 125°C 50 300 Reverse Bias Safe Operating Area 70 60 200 IC (A) VGE (V) Eon 600 500 Eoff 40 30 IC (A) E (mJ) VGE=13V 400 0 IC (A) TJ = 125°C 500 TJ=25°C IC (A) IC (A) 500 Output Characteristics 600 Er 400 300 20 200 10 100 0 VGE=15V TJ=125°C RG=1.8 Ω 0 0 2 4 6 8 10 Gate Resistance (ohms) 12 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.9 IGBT August, 2009 0.7 0.06 0.5 0.04 0.02 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT300A120G – Rev 2 Thermal Impedance (°C/W) 0.1 APTGT300A120G Forward Characteristic of diode 600 VCE=600V D=50% RG=1.8Ω TJ=125°C Tc=75°C 50 ZVS 40 ZCS 30 TJ=25°C 500 400 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 TJ=125°C 300 200 20 10 TJ=125°C 100 Hard switching 0 0 0 0 50 100 150 200 250 300 350 400 IC (A) 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.2 0.16 0.12 0.9 Diode 0.7 0.5 0.08 0.04 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT300A120G – Rev 2 August, 2009 rectangular Pulse Duration (Seconds)