Panasonic MA3075WA Silicon planer type Datasheet

MA111
Zener Diodes Composite Elements
MA3075WA
Silicon planer type
Constant voltage, constant current, waveform
cripper and surge absorption circuit
1.45
0.95
1
3
+0.1
0.4 –0.05
anode-common wiring of MA3075
1.9±0.2
● Two
0.65±0.15
0.95
+0.2
2.9 –0.05
type package (3-pin)
+0.25
1.5 –0.05
0.65±0.15
■ Features
● Mini
Unit : mm
+0.2
2.8 –0.3
■ Absolute Maximum Ratings (Ta= 25˚C)
Symbol
Rating
Unit
IF(AV)
100*1
mA
Instanious forward current
IFRM
200*1
mA
Total power dissipation
Ptot*2
100*1
mW
Non-repetitive reverse surge power dissipation
PZSM*3
15
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
– 55 to + 150
˚C
+0.1
0.16 –0.06
0 to 0.1
0.1 to 0.3
0.4±0.2
Average forward current
Parameter
0.8
+0.2
1.1 –0.1
2
1 : Cathode 1
2 : Cathode 2
3 : Anode 1
Anode 2
Mini Type Package (3-pin)
■ Internal Connection
*1
Working value in a single piece
*2 With a printed-circuit board
*3 t=100µ s, Tj=150˚C
1
3
2
1
■ Electrical Characteristics (Ta= 25˚C)*
Parameter
Forward voltage
Zener voltage
Operating resistance
Reverse current
Temperature coefficient of zener voltage
Condition
Symbol
VZ
min
IF=10mA
VF
*2
IZ = 5mA
RZK
IZ = 0.5mA
RZ
IZ = 5mA
IR1
VR = 5V
IR2
VR = 6.5V
SZ *3
IZ = 5mA
7.0
7.5A
max
0.8
0.9
7.5
6
2.5
Note 1. Rated input/output frequency : 5MHz
2. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
* 2 : Guaranteeed at 20ms after power application
* 3 : Tj= 25 to 150˚C
■ Marking
typ
4.0
Unit
V
7.9
V
120
Ω
15
Ω
1
µA
60
µA
5.3
mV/˚C
MA3075WA
Zener Diodes Composite Elements
Ptot – Ta
200
IF – VF
100
10mm 10mm K
With a printed-circuit board
VF – Ta
1.6
1.4
100
50
10
1
Ta=150˚C
0.1
–20˚C
100˚C
0
40
80
120
160
Ambient temperature
0
200
0.2
IF=100mA
0.8
(˚C)
Ta
0.6
0.8
0.2
1.0
0
–40
1.2
0
40
IZ (mA)
100
5V
Zener current
IR (nA)
Reverse current
(˚C)
10
VR=6V
1
160
Ta
100
Ta=150˚C
10
120
IZ – V Z
1000
100˚C
25˚C
80
Ambient temperature
IR – Ta
1000
100
3mA
0.4
VF (V)
Forward voltage
10mA
0.6
25˚C
0.4
IR – VR
IR (nA)
1.0
0.01
0
Reverse current
1.2
VF (V)
IF (mA)
150
Forward voltage
0.8mm
Cu foil
t=0.035 mm
Forward curren
Power dissipation
Ptot (mW)
A
10
1V
1
25˚C
Ta=–20˚C
–100˚C
150˚C
0.1
1
0.01
0.1
–40
0.1
0
2.0
4.0
6.0
Reverse voltage
8.0
10.0
12.0
VR (V)
0
40
Ta
300
200
(˚C)
Ta=25˚C
f=1MHz
Ta=25˚C
70
160
RZ – IZ
80
RZ (Ω)
100
60
50
Operating resistance
CD (pF)
120
Ambient temperature
CD – VR
Diode capacitance
80
40
30
20
30
10
3
1
10
0
0
1
2
3
Reverse voltage
4
5
VR (V)
6
0.3
0.3 0.5
1
3
5
Zener current
10
IZ (mA)
30 50
0.001
6.5
7.5
Zener voltage
8.5
VZ (V)
200
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