Diodes BSS138W N-channel enhancement mode field effect transistor Datasheet

SPICE MODELS: BSS138W
BSS138W
Lead-free Green
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
Low On-Resistance
A
Low Gate Threshold Voltage
SOT-323
D
Low Input Capacitance
Fast Switching Speed
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
B C
Lead Free/RoHS Compliant (Note 4)
G
"Green" Device (Note 5 and 6)
S
G
Mechanical Data
H
·
·
Case: SOT-323
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
·
·
Marking Code (See Page 2): K38
K
Case Material: Molded Plastic, "Green" Molding
Compound, Note 6. UL Flammability Classification Rating
94V-0
M
J
D
E
L
Drain
Terminals: Solderable per MIL-STD-202, Method 208
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
Terminal Connections: See Diagram
L
0.25
0.40
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
M
0.10
0.18
a
0°
8°
Gate
All Dimensions in mm
Ordering & Date Code Information: See Page 2
Source
Weight: 0.006 grams (approximate)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
BSS138W
Units
VDSS
50
V
VDGR
50
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Drain Current (Note 2)
Continuous
ID
200
mA
Drain-Gate Voltage (Note 1)
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
Pd
200
mW
RqJA
625
°C/W
Tj, TSTG
-55 to +150
°C
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
50
75
¾
V
VGS = 0V, ID = 250mA
Zero Gate Voltage Drain Current
IDSS
¾
¾
0.5
µA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
¾
¾
±100
nA
VGS = ±20V, VDS = 0V
OFF CHARACTERISTICS (Note 3)
ON CHARACTERISTICS (Note 3)
VGS(th)
0.5
1.2
1.5
V
VDS = VGS, ID = 250mA
RDS (ON)
¾
1.4
3.5
W
VGS = 10V, ID = 0.22A
gFS
100
¾
¾
mS
Input Capacitance
Ciss
¾
¾
50
pF
Output Capacitance
Coss
¾
¾
25
pF
Reverse Transfer Capacitance
Crss
¾
¾
8.0
pF
Turn-On Delay Time
tD(ON)
¾
¾
20
ns
Turn-Off Delay Time
tD(OFF)
¾
¾
20
ns
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
VDS =25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
VDS = 10V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Note:
VDD = 30V, ID = 0.2A,
RGEN = 50W
1. R GS £ 20KW.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
4. No purposefully added lead.
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BSS138W
ã Diodes Incorporated
Ordering Information (Note 5 & 7)
Device
Packaging
Shipping
BSS138W-7-F
SOT-323
3000/Tape & Reel
Notes: 5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product
manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
7. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
YM
Marking Information
K38
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
0.6
VGS = 3.5V
Tj = 25° C
ID, DRAIN-SOURCE CURRENT (A)
0.5
VGS = 3.25V
0.4
VGS = 3.0V
0.3
VGS = 2.75V
0.2
VGS = 2.5V
0.1
0
0
1
2
5
4
3
6
7
8
9
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
ID, DRAIN-SOURCE CURRENT (A)
0.8
-55° C
VDS = 1V
0.7
0.6
25° C
0.5
150° C
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
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BSS138W
RDS(ON), NORMALIZED DRAIN-SOURCE ON RESISTANCE (W)
2.45
2.25
2.05
VGS = 10V
ID = 0.5A
1.85
1.65
1.45
VGS = 4.5V
ID = 0.075A
1.25
1.05
0.85
0.65
-55
45
-5
95
145
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
VGS(th), GATE THRESHOLD VOLTAGE (V)
2
1.8
1.6
ID = 1.0mA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-55 -40 -25 -10 5
20 35 50 65 80 95 110 125 140
RDS(ON), DRAIN-SOURCE ON RESISTANCE (W)
Tj, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
8
7
150° C
VGS = 2.5V
6
5
25° C
4
3
-55° C
2
1
0
0
0.02
0.04
0.06
0.08 0.1
0.12
0.14
0.16
ID, DRAIN CURRENT (A)
Fig. 5 Drain-Source On Resistance vs. Drain Current
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BSS138W
9
8
VGS = 2.75V
7
150° C
6
5
4
25° C
3
2
-55° C
1
0
0.05
0
0.1
0.15
0.25
0.2
ID, DRAIN CURRENT (A)
Fig. 6 Drain-Source On Resistance vs. Drain Current
6
VGS = 4.5V
5
150° C
4
3
2
25° C
1
-55° C
0
0
0.05 0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Drain-Source On Resistance vs. Drain Current
3.5
VGS = 10V
3
150° C
2.5
2
1.5
25° C
1
-55° C
0.5
0
0
0.05 0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (A)
Fig. 8 Drain-Source On Resistance vs. Drain Current
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BSS138W
ID, DIODE CURRENT (A)
1
0.1
150° C
-55° C
0.01
25° C
0.001
0
0.2
0.4
0.6
0.8
1.2
1
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
100
C, CAPACITANCE (pF)
VGS = 0V
f = 1MHz
CiSS
10
COSS
CrSS
1
0
5
10
15
20
25
30
VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain Source Voltage
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IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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