DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • NEW PRODUCT • • • • • • • • Low On-Resistance N-Channel: 32mΩ @ 10V 46mΩ @ 4.5V P-Channel: 39mΩ @ 10V 53mΩ @ 4.5V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.072 grams (approximate) SO-8 S2 D2 G2 D2 S1 D1 G1 D1 D2 D1 G2 G1 S2 Top View Top View S1 N-Channel MOSFET P-Channel MOSFET Maximum Ratings N-CHANNEL – Q1 @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 3) Value 30 ±20 8.1 5.1 25 Unit V V Unit V V IDM Value -30 ±20 -7.0 -4.5 -25 Symbol PD RθJA TJ, TSTG Value 2.5 50 -55 to +150 Unit W °C/W °C TA = 25°C TA = 85°C ID Pulsed Drain Current (Note 4) IDM Maximum Ratings P-CHANNEL – Q2 Characteristic Symbol VDSS VGSS Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Thermal Characteristics ID A A @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Notes: A @TA = 25°C unless otherwise specified Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) A 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMC3032LSD Document number: DS32153 Rev. 1 - 2 1 of 8 www.diodes.com May 2010 © Diodes Incorporated DMC3032LSD Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1 RDS (ON) - |Yfs| VSD - 2.1 32 46 1.0 V Static Drain-Source On-Resistance 1.45 23 32 7.6 0.7 VDS = VGS, IC = 250μA VGS = 10V, IC = 7A VGS = 4.5V, IC = 5.6A VDS = 5V, IC = 7A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 404.5 51.8 45.1 1.5 9.2 1.2 1.8 3.4 6.18 13.92 2.84 - Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Test Condition mΩ S V pF pF pF Ω nC nC nC ns ns ns ns VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 5.8A VGS = 10V, VDS = 15V, RG = 3Ω, RL = 2.6Ω 20 20 VGS = 8.0V 16 ID, DRAIN CURRENT (A) 16 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics N-CHANNEL – Q1 @TA = 25°C unless otherwise specified VGS = 4.5V 12 8 VGS = 3.0V 4 VDS = 5V 12 8 TA = 150°C TA = 125°C 4 TA = 85°C VGS = 2.0V 0 0 1 VGS = 2.5V 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMC3032LSD Document number: DS32153 Rev. 1 - 2 5 0 T A = 25°C TA = -55°C 0 1 2 3 VGS, GATE SOURCE VOLTAGE (V) 4 Fig. 2 Typical Transfer Characteristics 2 of 8 www.diodes.com May 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 VGS = 2.5V 0.1 VGS = 4.5V VGS = 8.0V 0.01 0.1 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 1.3 1.1 VGS = 4.5V ID = 5.0A 0.9 VGS = 10V ID = 10A 0.5 -50 TA = 150°C 0.06 TA = 125°C T A = 85°C 0.04 TA = 25°C TA = -55°C 0.02 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 0.7 0.08 100 1.7 4 8 12 16 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.07 0.06 0.05 VGS = 4.5V ID = 5.0A 0.04 0.03 VGS = 10V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 20 2.0 18 1.6 1.2 16 ID = 1mA IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMC3032LSD ID = 250µA 0.8 0.4 14 TA = 25°C 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMC3032LSD Document number: DS32153 Rev. 1 - 2 3 of 8 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 May 2010 © Diodes Incorporated DMC3032LSD IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 1,000 NEW PRODUCT C, CAPACITANCE (pF) f = 1MHz Ciss 100 Coss Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance Electrical Characteristics P-CHANNEL 10,000 1,000 T A = 150°C TA = 125°C 100 10 TA = 85°C T A = 25°C TA = -55°C 1 0 30 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1 RDS (ON) - |Yfs| VSD - -2.2 39 53 -1.0 V Static Drain-Source On-Resistance -1.7 30 42 7 -0.75 VDS = VGS, ID = -250μA VGS = -10V, ID = -4.3A VGS = -4.5V, ID = -3.7A VDS = -5V, ID = -4.3A VGS = 0V, IS = -1.7A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1002 125 118 13 10.1 21.1 2.8 3.2 10.1 6.5 50.1 22.2 - Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (4.5V) Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V/-10V, VDS = -15V, ID = -6A VGS = -10V, VDS = -15V, RG = 6Ω , ID = -1A 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. DMC3032LSD Document number: DS32153 Rev. 1 - 2 4 of 8 www.diodes.com May 2010 © Diodes Incorporated DMC3032LSD 20 20 VGS = 10V VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 15 VGS = 3.5V 10 VGS = 3.0V 5 15 10 5 TA = 150°C TA = 125°C TA = 85°C VGS = 2.5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics 0.08 0.06 VGS = 4.5V VGS = 10V 0.02 0 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 13 Typical On-Resistance vs. Drain Current and Gate Voltage 1.3 1.1 VGS = 10V ID = 10A 0.9 VGS = 4.5V ID = 5A -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 15 On-Resistance Variation with Temperature DMC3032LSD Document number: DS32153 Rev. 1 - 2 6 VGS = 10V 0.08 TA = 150°C TA = 125°C 0.06 T A = 85°C TA = 25°C 0.04 TA = -55°C 0.02 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 0.5 -50 1 2 3 4 5 VGS, GATE SOURCE VOLTAGE (V) 0.10 20 1.7 0.7 0 Fig. 12 Typical Transfer Characteristics 0.10 0.04 TA = 25°C TA = -55°C 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT VGS = 4.5V VGS = 4.0V 5 of 8 www.diodes.com 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 14 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.08 0.07 0.06 VGS = 4.5V ID = 5A 0.05 0.04 0.03 VGS = 10V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 16 On-Resistance Variation with Temperature May 2010 © Diodes Incorporated DMC3032LSD 20 ID = 1mA IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 16 2.0 ID = 250µA 1.5 1.0 0.5 12 8 4 0 0.4 10,000 10,000 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) f = 1MHz 1,000 Ciss Coss 100 10 Crss 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 19 Typical Capacitance Ordering Information 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 18 Diode Forward Voltage vs. Current TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 0 30 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Drain-Source Leakage Current vs. Drain-Source Voltage (Note 7) Part Number DMC3032LSD-13 Notes: T A = 25°C 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 17 Gate Threshold Variation vs. Ambient Temperature C, CAPACITANCE (pF) NEW PRODUCT 2.5 Case SO-8 Packaging 2500/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 8 5 Logo C3032LD Part no. YY WW Xth week: 01 ~ 53 Year: “10” = 2010 1 4 Top View DMC3032LSD Document number: DS32153 Rev. 1 - 2 6 of 8 www.diodes.com May 2010 © Diodes Incorporated DMC3032LSD 0.254 Package Outline Dimensions E1 E NEW PRODUCT A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMC3032LSD Document number: DS32153 Rev. 1 - 2 7 of 8 www.diodes.com May 2010 © Diodes Incorporated DMC3032LSD IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DMC3032LSD Document number: DS32153 Rev. 1 - 2 8 of 8 www.diodes.com May 2010 © Diodes Incorporated