WINNERJOIN DAP222 Switching diode Datasheet

RoHS
DAP222
DAP222
D
T
,. L
1.60
SWITCHING DIODE
1.00
0.20
FEATURES:
1.60
0.30
Power dissipation
PD:
150
mW (Tamb=25℃)
0.50
Collector current
IF:
100 mA
Collector-base voltage
VR:
80
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
CIRCUIT:
R
T
1
MARKING: P
E
ELECTRICAL CHARACTERISTICS (Tamb=25℃
J
E
Parameter
O
IC
SOT-523
N
3
C
E
L
2
C
O
0.81
Symbol
unless otherwise specified)
Test
conditions
MIN
MAX
UNIT
V(BR)
IR= 100µA
IR
VR=70V
0.1
µA
Forward voltage
VF
IF=100mA
1.2
V
Diode capacitance
CD
VR=6V, f=1MHz
3.5
pF
Reverse recovery time
trr
VR=6V, IF=5mA
4
ns
Reverse breakdown voltage
Reverse voltage leakage current
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
80
V
E-mail:[email protected]
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