DMN3112SSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Case: SOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072g (approximate) • • • • • • SOP-8L S D S D S D G D TOP VIEW Internal Schematic TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Symbol VDSS VGSS Steady State Units V V IDM Value 30 ±20 6 4.5 24 Symbol PD RθJA TJ, TSTG Value 2.5 50 -55 to +150 Unit W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 3) A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 800 ±80 ±800 V nA 2.2 57 112 ⎯ 1.2 S V ⎯ ⎯ ⎯ pF pF pF IGSS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1 Static Drain-Source On-Resistance RDS(ON) ⎯ gfs VSD ⎯ 0.5 ⎯ 43 83 2.8 0.8 Ciss Coss Crss ⎯ ⎯ ⎯ 268 73 50 Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. nA V mΩ Test Condition VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS = ±25V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 3.7A VDS = 10V, ID = 3.7A VGS = 0V, IS = 2.1A VDS = 15V, VGS = 0V f = 1.0MHz Device mounted on 2 oz copper pad layout with RθJA = 50°C/W. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN3112SSS Document number: DS31582 Rev. 1 - 2 1 of 4 www.diodes.com October 2008 © Diodes Incorporated DMN3112SSS 10 10 VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VGS = 4.5V VGS = 4.0V 6 4 VGS = 3.5V 6 4 TA = 150°C 2 2 0 0.5 0 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 1 VGS = 4.5V VGS = 10V 0.01 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.24 T A = 150°C 0.20 1.0 0.8 0.16 0.12 TA = 25°C 0.08 0 2 10 4 6 8 ID, DRAIN CURRENT (A) 0.14 0.12 VGS = 4.5V ID = 5A 0.10 0.08 0.06 VGS = 10V ID = 10A 0.04 0.02 Fig. 5 On-Resistance Variation with Temperature Document number: DS31582 Rev. 1 - 2 TA = -55°C 0.04 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) DMN3112SSS TA = 125°C T A = 85°C 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 4.5V ID = 5A 0.6 -50 VGS = 4.5V 0.28 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature VGS = 10V ID = 10A 1.2 0.32 20 1.6 1.4 5 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 1 0.1 TA = 25°C TA = -55°C VGS = 2.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 TA = 85°C TA = 125°C VGS = 3.0V RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 8 2 of 4 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature October 2008 © Diodes Incorporated DMN3112SSS ID = 1mA TA = 25°C 8 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 10 2.0 ID = 250µA 1.6 1.2 0.8 0.4 6 4 2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 C, CAPACITANCE (pF) Ciss 100 Coss Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 1 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 2.4 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 168°C/W D = 0.02 0.01 D = 0.01 P(pk) D = Single Pulse 0.001 0.00001 0.0001 DMN3112SSS Document number: DS31582 Rev. 1 - 2 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response 3 of 4 www.diodes.com 10 100 1,000 October 2008 © Diodes Incorporated DMN3112SSS Ordering Information (Note 6) Part Number DMN3112SSS-13 Notes: Case SOP-8L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. NEW PRODUCT Marking Information Top View 8 5 Logo N3112SS Part no. YY WW 1 4 Xth week: 01~52 Year : "07" = 2007 "08" = 2008 0.254 Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SOP-8L Dim Min Max A 1.75 A1 0.08 0.25 A2 1.40 1.50 A3 0.20 Typ b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.80 3.90 e 1.27 Typ h 0.35 L 0.60 0.80 0° 8° θ All Dimensions in mm D Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN3112SSS Document number: DS31582 Rev. 1 - 2 4 of 4 www.diodes.com October 2008 © Diodes Incorporated