BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Ultra Low Profile Package B • • • • • DFN1310H4-6 C B E Top View Mechanical Data • • E C Case: DFN1310H4-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish ⎯ NiPdAu annealed over Copper leadframe (Lead Free Plating). Solderable per MILSTD-202, Method 208 C Marking Code Information: See Page 4 Ordering Information: See Page 4 Weight: 0.0015g (approximate) G K Z E B R0 N ot .1 50 e4 L E Max Typ A 1.25 1.38 1.30 B 0.95 1.08 1.00 C 0.20 0.30 0.25 D* - - 0.10 E** - - 0.20 G - 0.40 - H 0 0.05 0.02 K* 0.10 0.20 0.15 L* 0.30 0.50 0.40 M** - - 0.35 N* - - 0.25 Z** - - 0.05 L N C D E C B Internal Schematic D N (TOP VIEW) M Z All Dimensions in mm A * Dimensions D, K, L, N Repeat 4X ** Dimensions E, M, Z Repeat 2X Bottom View Maximum Ratings Min H Side View B Dim @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 100 mA Power Dissipation (Note 3) Pd 350 mW RθJA 357 °C/W Tj, TSTG -65 to +150 °C Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Notes: 1. 2. 3. 4. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB pad layout as shown on page 4. Radiused pad feature is intended for device manufacturing control and should not be considered as a polarity indicator, or to suggest orientation of the devices in the carrier tape. DS30817 Rev. 6 - 2 1 of 4 www.diodes.com BC847CDLP © Diodes Incorporated @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (Note 5) V(BR)CBO 50 ⎯ ⎯ V IC = 10µA, IB = 0 Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO 45 ⎯ ⎯ V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 5) V(BR)EBO 6 ⎯ ⎯ V IE = 1µA, IC = 0 hFE 420 650 800 ⎯ ⎯ 250 600 mV ⎯ mV ICES ICBO ICBO 580 ⎯ ⎯ ⎯ ⎯ 55 130 700 900 660 ⎯ ⎯ ⎯ ⎯ 700 770 15 15 5.0 fT 100 ⎯ ⎯ MHz CCBO ⎯ 2.0 ⎯ pF DC Current Gain (Note 5) Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) Base-Emitter Saturation Voltage (Note 5) VBE(SAT) Base-Emitter Voltage (Note 5) VBE(ON) Collector-Cutoff Current (Note 5) Gain Bandwidth Product Collector-Base Capacitance ⎯ mV nA nA µA Test Condition VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCE = 50V VCB = 30V VCE = 30V, TA = 150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1MHz Notes: 3. Device mounted on FR-5 PCB pad layout as shown on page 4. 5. Short duration test pulse used to minimize self-heating effect. 0.25 350 300 0.20 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) NEW PRODUCT Electrical Characteristics 250 200 150 100 50 0.15 0.10 0.05 0.00 0 0 25 50 75 100 125 0 150 2 3 4 5 6 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector Emitter Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Dissipation vs. Ambient Temperature (Note 3) DS30817 Rev. 6 - 2 1 2 of 4 www.diodes.com BC847CDLP © Diodes Incorporated 1400 0.25 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1200 TA = 150°C 1000 800 TA = 85°C 600 TA = 25°C 400 TA = -55°C 0.20 0.15 0.10 0.05 200 0.00 0 0.01 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs. Collector Current 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector Emitter Saturation Voltage vs. Collector Current 1.0 1.2 VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6, Typical Base Emitter Saturation Voltage vs. Collector Current 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base Emitter Turn-On Voltage vs. Collector Current 14 300 fT, GAIN-BANDWIDTH PRODUCT (MHz) f = 1MHz 12 10 CAPACITANCE (pF) NEW PRODUCT VCE = 5V 8 6 4 2 250 200 150 100 50 0 0 5 10 15 20 0 VR, REVERSE VOLTAGE (V) Fig. 7, Typical Capacitance Characteristics DS30817 Rev. 6 - 2 0 20 40 70 30 50 60 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical Gain-Bandwidth Product vs. Collector Current 25 3 of 4 www.diodes.com 10 BC847CDLP © Diodes Incorporated NEW PRODUCT Ordering Information (Note 6) Notes: Device Package Shipping BC847CDLP-7 DFN1310H4-6 3000/Tape & Reel 6. For packaging details, please go to our website at http://www.diodes.com/ap02007.pdf. Marking Information (Note 7) 1M 1M = Product Type Marking Code (TOP VIEW) Note: 7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated or mixed (both ways). Suggested Pad Layout X3 a X DFN1310H4-6 Dim Value X 0.52 Y 0.52 X1 0.20 Y1 0.375 X2 0.17 Y2 0.16 X3 0.15 a 0.09 b 0.06 All Dimensions in mm Y b Y2 Y1 X2 X1 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30817 Rev. 6 - 2 4 of 4 www.diodes.com BC847CDLP © Diodes Incorporated