ATMEL AT60142ET

Features
• Operating Voltage: 3.3V
• Access Time:
•
•
•
•
•
•
•
•
•
•
– 15 ns (Preview) for 3.3V biased only (AT60142E)
– 17 ns and 20 ns for 5V Tolerant (AT60142ET)
Very Low Power Consumption
– Active: 810 mW (Max) @ 15 ns
– Standby: 215 µW (Typ)
Wide Temperature Range: -55 to +125°C
500 Mils Width Package
TTL-Compatible Inputs and Outputs
Asynchronous
Designed on 0.25 Micron Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm 2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
500 Mils Wide FP36 Package
ESD Better than 4000V
Rad Hard
512K x 8
Very Low Power
CMOS SRAM
Description
The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8
bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
AT60142E
AT60142ET
Utilizing an array of six transistors (6T) memory cells, the AT60142E/ET combine an
extremely low standby supply current (Typical value = 65 µA) with a fast access time
at 15 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise.
The E version is biased at 3.3 V and is not 5V tolerant: it is available to 15(1) and 20 ns
specification.
The ET(1) version is a variant allowing for 5V tolerance: it is available in 17 ns and 20
ns specification.
The AT60142E/ET are processed according to the methods of the latest revision of
the MIL PRF 38535 or ESA SCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Note:
1. Preliminary: contact factory for availability.
Rev. 4156F–AERO–06/04
1
AT60142E/ET
Block Diagram
Pin Configuration
A0
A1
A2
A3
A4
CS
I/O1
I/O2
Vcc
GND
I/O3
I/O4
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
3
6
p
in
-F
la
t
p
a
c
k
5
0
0
M
il
s
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A18
A17
A16
A15
OE
I/O8
I/O7
GND
Vcc
I/O6
I/O5
A14
A13
A12
A11
A10
VRef
2
4156F–AERO–06/04
Pin Description
Table 1. Pin Names
Name
Description
A0 - A18
Address Inputs
I/O1 - I/O8
Data Input/Output
CS
Chip Select
WE
Write Enable
OE
Output Enable
Vcc
Power Supply
VRef
Internal Reference Voltage Output
GND
Ground
Table 2. Truth Table(1)
CS
WE
OE
Inputs/Outputs
Mode
H
X
X
Z
Deselect/
Power-down
L
H
L
Data Out
Read
L
L
X
Data In
Write
L
H
H
Z
Output Disable
Note:
3
1. L=low, H=high, X= H or H, Z=high impedance.
AT60142E/ET
4156F–AERO–06/04
AT60142E/ET
Decoupling
Decoupling capacitors closed to the device
AT60142
Vcc
Vcc
Recommended
value:
100 nF
28
9
Vcc
GND
10
GND
Vcc
27
VRef
19
Recommended
value:
100 nF
Mandatory Capacitor
Recommended
value:
10 µF
4
4156F–AERO–06/04
Electrical Characteristics
Absolute Maximum Ratings*
Supply Voltage to GND Potential: ......................... -0.5V + 4.6V
*NOTE:
DC Input Voltage:.....................................GND -0.5V to 4.6V(1)
DC Output Voltage High Z State: ................ GND -0.5V to 4.6V
Storage Temperature: ................................... -65°C to + 150°C
Output Current Into Outputs (Low): ............................... 20 mA
Stresses beyond those listed under "Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions
beyond those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect device reliability.
Electro Statics Discharge Voltage: .... > 4001V (MIL STD 883D
Method 3015.3)
Note:
1. 7V for ET version.
Military Operating Range
Operating Voltage
Operating Temperature
3.3 + 0.3V
-55°C to + 125°C
Military
Recommended DC Operating Conditions
Parameter
Note:
Description
Vcc
Supply voltage
GND
Ground
Min
Typ
Max
Unit
3
3.3
3.6
V
0.0
0.0
0.0
V
VIL
Input low voltage
GND - 0.3
0.0
0.8
V
VIH
Input high voltage
2.2
–
VCC + 0.3(1)
V
Min
Typ
Max
Unit
1. 5.8V for ET version
Capacitance
Parameter
Note:
5
Description
Cin (1)
Input low voltage
–
–
8
pF
Cout(1)
Output high voltage
–
–
8
pF
1. Guaranteed but not tested.
AT60142E/ET
4156F–AERO–06/04
AT60142E/ET
DC Parameters
Parameter
1.
2.
3.
Description
Minimum
Typical
Maximum
Unit
IIX (1)
Input leakage current
-1
–
1
µA
IOZ(1)
Output leakage
current
-1
–
1
µA
VOL (2)
Output low voltage
–
–
0.4
V
VOH (3)
Output high voltage
2.4
–
–
V
AT60142E -15 (1)
AT60142ET-17 (1)
AT60142E -20
AT60142ET -20 (1)
Unit
Value
GND < VIN < VCC , GND < VOUT < VCC Output Disabled.
VCC min. IOL = 8 mA.
VCC min. IOH = -4 mA.
Consumption
1.
2.
3.
4.
Symbol
Description
ICCSB (2)
Standby supply
current
4
4
mA
max
ICCSB1 (3)
Standby supply
current
3
3
mA
max
ICCOP (4)
Dynamic operating
current
225
220
mA
max
Preliminary
CS >VIH
CS > VCC - 0.3V
F = 1/TAVAV, Iout = 0 mA, WE = OE = VIH, VIN = GND/V CC, VCC max.
6
4156F–AERO–06/04
AC Characteristics
Temperature Range:................................................ -55 +125°C
Supply Voltage:........................................................ 3.3 +0.3V
Input Pulse Levels: .................................................. GND to 3.0V
Input Rise and Fall Times:....................................... 3ns (10 - 90%)
Input and Output Timing Reference Levels: ............ 1.5V
VRef Capacitor: ....................................................... 10 µF
Output Loading IOL/IOH:............................................ See Figure 1
Figure 1. AC Test Loads Waveforms
Data Retention Mode
Atmel CMOS RAM's are designed with battery backup in mind. Data retention voltage
and supply current are guaranteed over temperature. The following rules insure data
retention:
1. During data retention chip select CS must be held high within VCC to VCC -0.2V.
2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, minimizing power dissipation.
3. During power-up and power-down transitions CS and OE must be kept between
VCC + 0.3V and 70% of VCC.
4. The RAM can begin operation > t R ns after VCC reaches the minimum operation
voltages (3V).
Figure 2. Data Retention Timing
7
AT60142E/ET
4156F–AERO–06/04
AT60142E/ET
Data Retention Characteristics
Parameter
Description
Min
Typ TA = 25°C
Max
Unit
VCCDR
VCC for data
retention
2.0
–
–
V
tCDR
Chip deselect
to data
retention time
0.0
–
–
ns
tR
Operation
recovery time
tAVAV
–
–
ns
ICCDR (2)
Data retention
current
–
0.050
2.5
mA
1.
2.
(1)
TAVAV = Read cycle time.
CS = V CC, VIN = GND/VCC.
8
4156F–AERO–06/04
Write Cycle
AT60142E-20
AT60142ET-17(2) AT60142ET -20(2)
AT60142E-15(2)
Unit
Value
20
ns
min
0
0
ns
min
10
11
12
ns
min
Data set-up time
7
8
9
ns
min
TELWH
CS low to write
end
10
11
12
ns
min
TWLQZ
Write low to high
Z(1)
7
8
9
ns
max
TWLWH
Write pulse width
10
11
12
ns
min
TWHAX
Address hold
from end of write
0
0
0
ns
min
TWHDX
Data hold time
3
3
3
ns
min
TWHQX
Write high to low
Z(1)
3
3
3
ns
min
Symbol
Parameter
TAVAW
Write cycle time
15
17
TAVWL
Address set-up
time
0
TAVWH
Address valid to
end of write
TDVWH
Notes:
1. Parameters guaranteed, not tested, with output loading 5 pF. (See “AC Test Loads Waveforms” on page 7.)
2. Preliminary.
Read Cycle
AT60142E-15(2)
AT60142ET-17(2)
AT60142E-20
AT60142ET 20(2)
Read cycle time
15
17
20
ns
min
TAVQV
Address access time
15
17
20
ns
max
TAVQX
Address valid to low Z
3
3
3
ns
min
TELQV
Chip-select access time
15
17
20
ns
max
TELQX
CS low to low Z
3
3
3
ns
min
TEHQZ
CS high to high Z (1)
7
8
9
ns
max
TGLQV
Output Enable access time
7
8
9
ns
max
TGLQX
OE low to low Z(1)
0
0
0
ns
min
TGHQZ
OE high to high Z (1)
7
8
9
ns
max
Symbol
Parameter
TAVAV
Notes:
9
Unit
Value
1. Parameters guaranteed, not tested, with output loading 5 pF. (See “AC Test Loads Waveforms” on page 7.)
2. Preliminary.
AT60142E/ET
4156F–AERO–06/04
AT60142E/ET
Figure 3. Write Cycle 1. WE Controlled, OE High During Write
E
Figure 4. Write Cycle 2. WE Controlled, OE Low
E
Figure 5. Write Cycle 3. CS Controlled(1)
E
Note:
The internal write time of the memory is defined by the overlap of CS Low and W LOW. Both signals must be activated to initiate
a write and either signal can terminate a write by going in active mode. The data input setup and hold timing should be referenced to the active edge of the signal that terminates the write.
Data out is high impedance if OE= V IH.
10
4156F–AERO–06/04
Figure 6. Read Cycle nb 1: Address Controlled (CS = OE = V IL, WE = VIH)
Figure 7. Read Cycle nb 2: Chip Select Controlled (WE = VIH)
11
AT60142E/ET
4156F–AERO–06/04
AT60142E/ET
Ordering Information
Part Number
Temperature Range
Speed
Package
Flow
25°C
20 ns/3.3V
FP36.5
Engineering Samples
AT60142E-DC20M
-55° to +125°C
20 ns/3.3V
FP36.5
Standard Mil
AT60142E-DC20M-E
AT60142E-DC20MMQ
-55° to +125°C
20 ns/3.3V
FP36.5
QML Q
AT60142E-DC20SMV
-55° to +125°C
20 ns/3.3V
FP36.5
QML V
AT60142E-DC20SSB
-55° to +125°C
20 ns/3.3V
FP36.5
SCC B
25°C
20 ns/3.3V
Die
Engineering Samples
-55° to +125°C
20 ns/3.3V
Die
QML Q
-55° to +125°C
20 ns/3.3V
Die
QML V
(1)
AT60142E-DD20M-E
AT60142E-DD20MMQ
(1)
AT60142E-DD20SMV (1)
Preliminary
AT60142E-DC15M-E
25°C
15 ns/3.3V
FP36.5
Engineering Samples
AT60142E-DC15M
-55° to +125°C
15 ns/3.3V
FP36.5
Standard Mil
AT60142E-DC15MMQ
-55° to +125°C
15 ns/3.3V
FP36.5
QML Q
AT60142E-DC15SMV
-55° to +125°C
15 ns/3.3V
FP36.5
QML V
AT60142E-DC15SSB
-55° to +125°C
15 ns/3.3V
FP36.5
SCC B
25°C
15 ns/3.3V
Die
Engineering Samples
-55° to +125°C
15 ns/3.3V
Die
QML Q
-55° to +125°C
15 ns/3.3V
Die
QML V
25°C
20 ns/5V tol.
FP36.5
Engineering Samples
AT60142ET-DC20M
-55° to +125°C
20 ns/5V tol.
FP36.5
Standard Mil
AT60142ET-DC20MMQ
-55° to +125°C
20 ns/5V tol.
FP36.5
QML Q
AT60142ET-DC20SSV
-55° to +125°C
20 ns/5V tol.
FP36.5
QML V
AT60142ET-DC20SSB
-55° to +125°C
20 ns/5V tol.
FP36.5
SCC B
25°C
20 ns/5V tol.
Die
Engineering Samples
-55° to +125°C
20 ns/5V tol.
Die
QML Q
-55° to +125°C
20 ns/5V tol.
Die
QML V
25°C
17 ns/5V tol.
FP36.5
Engineering Samples
-55° to +125°C
17 ns/5V tol.
FP36.5
Standard Mil
AT60142E-DD15M-E(1)
AT60142E-DD15MMQ(1)
AT60142E-DD15SMV
(1)
AT60142ET-DC20M-E
(1)
AT60142ET-DD20M-E
AT60142ET-DD20MMQ
AT60142ET-DD20SMS
(1)
(1)
AT60142ET-DC17M-E
AT60142ET-DC17M
AT60142ET-DC17MMQ
-55° to +125°C
17 ns/5V tol.
FP36.5
QML Q
AT60142ET-DC17SSV
-55° to +125°C
17 ns/5V tol.
FP36.5
QML V
AT60142ET-DC17SSB
-55° to +125°C
17 ns/5V tol.
FP36.5
SCC B
25°C
17 ns/5V tol.
Die
Engineering Samples
-55° to +125°C
17 ns/5V tol.
Die
QML Q
-55° to +125°C
17 ns/5V tol.
Die
QML V
AT60142ET-DD17M-E
(1)
AT60142ET-DD17MMQ
(1)
AT60142ET-DD17SMS (1)
Note:
1. Contact Atmel for availability.
12
4156F–AERO–06/04
Package Drawings
36-lead Flat Pack (500 Mils)
13
AT60142E/ET
4156F–AERO–06/04
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Regional Headquarters
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Atmel Operations
Memory
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
RF/Automotive
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
ASIC/ASSP/Smart Cards
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
Literature Requests
www.atmel.com/literature
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2004. All rights reserved. Atmel ® and combinations thereof are the registered trademarks of Atmel Corporation or its
subsidiaries. Other terms and product names may be the trademarks of others.
Printed on recycled paper.
4156F–AERO–06/04
/xM
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Regional Headquarters
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Atmel Operations
Memory
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
RF/Automotive
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
ASIC/ASSP/Smart Cards
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
Literature Requests
www.atmel.com/literature
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2004. All rights reserved. Atmel ® and combinations thereof are the registered trademarks of Atmel Corporation or its
subsidiaries. Other terms and product names may be the trademarks of others.
Printed on recycled paper.
4156F–AERO–06/04
/xM
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Regional Headquarters
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Atmel Operations
Memory
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
RF/Automotive
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
ASIC/ASSP/Smart Cards
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
Literature Requests
www.atmel.com/literature
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2004. All rights reserved. Atmel ® and combinations thereof are the registered trademarks of Atmel Corporation or its
subsidiaries. Other terms and product names may be the trademarks of others.
Printed on recycled paper.
4156F–AERO–06/04
/xM
Atmel Corporation
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Literature Requests
www.atmel.com/literature
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2004. All rights reserved. Atmel ® and combinations thereof are the registered trademarks of Atmel Corporation or its
subsidiaries. Other terms and product names may be the trademarks of others.
Printed on recycled paper.
4156F–AERO–06/04
/xM