LINER LTC2909 Uv, ov and reverse supply protection controller low operating current: 125î¼a Datasheet

LTC4365
UV, OV and Reverse
Supply Protection Controller
FEATURES
DESCRIPTION
n
The LTC®4365 protects applications where power supply
input voltages may be too high, too low or even negative.
It does this by controlling the gate voltages of a pair of
external N-channel MOSFETs to ensure that the output
stays within a safe operating range.
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Wide Operating Voltage Range: 2.5V to 34V
Overvoltage Protection to 60V
Reverse Supply Protection to –40V
Blocks 50Hz and 60Hz AC Power
No Input Capacitor or TVS Required for Most
Applications
Adjustable Undervoltage and Overvoltage
Protection Range
Charge Pump Enhances External N-Channel MOSFET
Low Operating Current: 125μA
Low Shutdown Current: 10μA
Fault Status Output
Compact 8-Lead, 3mm × 2mm DFN and
TSOT-23 (ThinSOT™) Packages
APPLICATIONS
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Portable Instrumentation
Industrial Automation
Laptops
Automotive
The LTC4365 can withstand voltages between –40V and
60V and has an operating range of 2.5V to 34V, while
consuming only 125μA in normal operation.
Two comparator inputs allow configuration of the
overvoltage (OV) and undervoltage (UV) set points using an
external resistive divider. A shutdown pin provides external
control for enabling and disabling the MOSFETs as well
as placing the device in a low current shutdown state. A
fault output provides status of the gate pin pulling low. A
fault is indicated when the part is in shutdown or the input
voltage is outside the UV and OV set points.
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and
ThinSOT, No RSENSE and Hot Swap are trademarks of Linear Technology Corporation. All other
trademarks are the property of their respective owners.
TYPICAL APPLICATION
12V Automotive Application
Load Protected from Reverse and Overvoltage at VIN
Si4946
VIN
12V
VOUT
3A
GATE
VIN
UV = 3.5V
OV = 18V
VIN
VALID
WINDOW
VOUT
GND
LTC4365
510k
30V
VOUT
VOUT
SHDN
1820k
10V/DIV
FAULT
UV
–30V
VIN
243k
1s/DIV
OV
59k
4365 TA01b
OV = 18V
UV = 3.5V
GND
4365 TA01a
4365f
1
LTC4365
ABSOLUTE MAXIMUM RATINGS
Supply Voltage (Note 1)
VIN .......................................................... –40V to 60V
Input Voltages (Note 3)
UV, SHDN .............................................. –0.3V to 60V
OV ............................................................ –0.3V to 6V
VOUT....................................................... –0.3V to 40V
Output Voltages (Note 4)
FAULT..................................................... –0.3V to 60V
GATE ....................................................... –40V to 45V
Operating Ambient Temperature Range
LTC4365C ................................................ 0°C to 70°C
LTC4365I .............................................–40°C to 85°C
LTC4365H .......................................... –40°C to 125°C
Storage Temperature Range .................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec)
for TSOT Only ................................................... 300°C
PIN CONFIGURATION
TOP VIEW
GND 1
OV 2
UV 3
VIN 4
9
GND
8
SHDN
7
FAULT
6
VOUT
5
GATE
TOP VIEW
VIN
UV
OV
GND
1
2
3
4
8
7
6
5
GATE
VOUT
FAULT
SHDN
TS8 PACKAGE
8-LEAD PLASTIC TSOT-23
TJMAX = 150°C, θJA = 195°C/W
DDB PACKAGE
8-LEAD (3mm × 2mm) PLASTIC DFN
TJMAX = 150°C, θJA = 76°C/W
EXPOSED PAD (PIN 9) PCB GROUND CONNECTION OPTIONAL
ORDER INFORMATION
Lead Free Finish
TAPE AND REEL (MINI)
TAPE AND REEL
PART MARKING*
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LTC4365CDDB#TRMPBF
LTC4365CDDB#TRPBF
LFKS
8-Lead (3mm × 2mm) Plastic DFN
0°C to 70°C
LTC4365IDDB#TRMPBF
LTC4365IDDB#TRPBF
LFKS
8-Lead (3mm × 2mm) Plastic DFN
–40°C to 85°C
LTC4365HDDB#TRMPBF
LTC4365HDDB#TRPBF
LFKS
8-Lead (3mm × 2mm) Plastic DFN
–40°C to 125°C
LTC4365CTS8#TRMPBF
LTC4365CTS8#TRPBF
LTFKT
8-Lead Plastic TSOT-23
0°C to 70°C
LTC4365ITS8#TRMPBF
LTC4365ITS8#TRPBF
LTFKT
8-Lead Plastic TSOT-23
–40°C to 85°C
LTC4365HTS8#TRMPBF
LTC4365HTS8#TRPBF
LTFKT
8-Lead Plastic TSOT-23
–40°C to 125°C
TRM = 500 pieces. *Temperature grades are identified by a label on the shipping container.
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
4365f
2
LTC4365
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 2.5V to 34V, unless otherwise noted. (Note 2)
SYMBOL
PARAMETER
CONDITIONS
MIN
VIN
Input Voltage Range
Operating Range
Protection Range
l
l
IVIN
Input Supply Current
SHDN = 0V, VIN = VOUT, –40°C to 85°C
SHDN = 0V, VIN = VOUT, –40°C to 125°C
SHDN = 2.5V
l
l
l
IVIN(R)
Reverse Input Supply Current
VIN = –40V, VOUT = 0V
l
VIN(UVLO)
Input Supply Undervoltage Lockout
VIN Rising
l
IVOUT
VOUT Input Current
SHDN = 0V, VIN = VOUT
SHDN = 2.5V, VIN = VOUT
VIN = –40V, VOUT = 0V
l
l
l
ΔVGATE
N-Channel Gate Drive
(GATE-VOUT )
VIN = VOUT = 5.0V, IGATE = –1μA
VIN = VOUT = 12V to 34V, IGATE = –1μA
l
l
IGATE(UP)
N-Channel Gate Pull Up Current
GATE = VIN = VOUT = 12V
IGATE(FAST) N-Channel Gate Fast Pull Down Current
IGATE(SLOW) N-Channel Gate Gentle Pull Down Current
TYP
MAX
UNITS
VIN, VOUT
2.5
–40
34
60
V
V
10
10
25
50
100
150
μA
μA
μA
–1.2
–1.8
mA
2.2
2.4
V
6
100
20
30
250
50
μA
μA
μA
3
7.4
3.6
8.4
4.2
9.8
V
V
l
–12
–20
–30
μA
Fast Shutdown, GATE = 20V, VIN = VOUT = 12V
l
31
50
72
mA
Gentle Shutdown, GATE = 20V, VIN = VOUT = 12V
l
50
90
150
μA
tGATE(FAST) N-Channel Gate Fast Turn Off Delay
CGATE = 2.2nF, UV or OV Fault
l
2
4
μs
tGATE(SLOW) N-Channel Gentle Turn Off Delay
CGATE = 2.2nF, SHDN Falling, VIN = VOUT = 12V
l
150
250
350
μs
GATE Recovery Delay Time
VIN = 12V, Power Good to ∆VGATE > 0V
l
26
36
49
ms
UV Input Threshold Voltage
UV Falling → ΔVGATE = 0V
l
492.5
500
507.5
mV
VOV
OV Input Threshold Voltage
OV Rising → ΔVGATE = 0V
l
492.5
500
507.5
mV
VUVHYST
UV Input Hysteresis
l
20
25
32
mV
VOVHYST
OV Input Hysteresis
l
20
25
32
mV
ILEAK
UV, OV Leakage Current
V = 0.5V, VIN = 34V
l
±10
nA
tFAULT
UV, OV Fault Propagation Delay
Overdrive = 50mV
VIN = VOUT = 12V
l
2
μs
VSHDN
SHDN Input Threshold
SHDN Falling to ΔVGATE = 0V
l
ISHDN
SHDN Input Current
SHDN = 0.75V, VIN = 34V
l
tSTART
Delay Coming Out of Shutdown Mode
SHDN Rising to ΔVGATE > 0V, VIN = VOUT = 12V
l
tSHDN(F)
SHDN to FAULT Asserted
VIN = VOUT = 12V
l
tLOWPWR
Delay from Turn Off to Low Power Operation
VIN = VOUT = 12V
l
VOL
FAULT Output Voltage Low
IFAULT = 500μA
IFAULT
FAULT Leakage Current
FAULT = 5V, VIN = 34V
1.8
GATE
tRECOVERY
UV, OV
VUV
1
SHDN
0.4
1.2
V
±10
nA
800
1200
μs
1.5
3
μs
36
55
ms
l
0.15
0.4
V
l
±20
400
26
0.75
FAULT
Note 1. Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2. All currents into pins are positive; all voltages are referenced to
GND unless otherwise noted.
nA
Note 3. These pins can be tied to voltages below –0.3V through a resistor
that limits the current below 1mA.
Note 4. The GATE pin is referenced to VOUT and does not exceed 44V for
the entire operating range.
4365f
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LTC4365
TYPICAL PERFORMANCE CHARACTERISTICS
VIN Operating Current vs
Temperature
VIN Shutdown Current vs VIN
VIN Current vs VIN (–40 to 60V)
30
100
400
VIN = VOUT
SHDN = 0V
SHDN = 2.5V
VOUT = VIN
SHDN = UV = 0V
25
80
0
125°C
VIN = 34V
25°C
IVIN (μA)
VIN = 12V
40
IVIN (μA)
IVIN (μA)
20
60
70°C
15
25°C
–45°C
–400
–800
125°C
10
–45°C
20
VIN = 2.5V
0
–50
0
–25
–1200
5
75
25
0
50
TEMPERATURE (°C)
100
5
0
125
10
20
15
VIN (V)
30
25
–1600
–50
200
25
SHDN = 0V
VIN = VOUT
SHDN = 2.5V
VIN = VOUT
160
VOUT = 0V
20
15
–45°C
VOUT = 34V
IVOUT (μA)
IVOUT (μA)
VOUT = 34V
10
VOUT = 12V
15
25°C
10
125°C
5
40
75
VOUT Current vs Reverse VIN
20
80
50
4365 G03
VOUT Shutdown Current vs
Temperature
VOUT = 12V
25
0
4365 G02
VOUT Operating Current vs
Temperature
120
–25
VIN (V)
4365 G01
IVOUT (μA)
35
25°C
5
VOUT = 2.5V
VOUT = 2.5V
0
–50
–25
0
75
25
50
TEMPERATURE (C°)
100
0
–50
125
–25
0
25
75
50
TEMPERATURE (C°)
100
GATE Drive vs VIN
8
VIN = VOUT = 12V
IGATE = –1μA
VIN = VOUT = 12V
20
IGATE(UP) (μA)
ΔVGATE (V)
6
4
4
VIN = VOUT = 2.5V
2
T = 25°C
IGATE = –1μA
0
0
5
10
15
20
VIN (V)
25
30
35
4365 G07
–50
125°C
VOUT = VIN
2
–40
25
VIN = VOUT = 34V
6
–30
–20
VIN (V)
GATE Current vs GATE Drive
GATE Drive vs Temperature
10
8
–10
4365 G06
10
VOUT = 0V
ΔVGATE (V)
0
4365 G05
4365 G04
12
0
125
0
–50
–25
75
25
0
50
TEMPERATURE (°C)
15
25°C
10
–45°C
5
100
0
125
4365 G08
0
2
4
6
ΔVGATE (V)
8
10
4365 G09
4365f
4
LTC4365
TYPICAL PERFORMANCE CHARACTERISTICS
OV Threshold vs Temperature
UV Threshold vs Temperature
507.5
UV/OV Leakage vs Temperature
507.5
VIN = VOUT = 12V
1.00
VIN = VOUT = 12V
505.0
505.0
502.5
502.5
VUV/OV = 0.5V
VIN = 12V
500.0
ILEAK (nA)
VOV (mV)
VUV (mV)
0.75
500.0
497.5
497.5
495.0
495.0
492.5
–50
492.5
–50
0.50
0.25
UV
OV
75
0
50
25
TEMPERATURE (°C)
100
125
–25
75
0
50
25
TEMPERATURE (°C)
4365 G10
–25
75
25
125
TEMPERATURE (°C)
Recovery Delay Time vs VIN
50
VIN = VOUT = 12V
T = 25°C
175
4365 G12
Recovery Delay Time vs
Temperature
50
–45°C
16
40
tRECOVERY (ms)
tFAULT (μs)
125
4365 G11
UV/OV Propagation Delay vs
Overdrive
20
100
12
8
125°C
40
VIN = 34V
VIN = 12V
tRECOVERY (ms)
–25
0
–75
30
20
25°C
30
20
VIN = 2.5V
4
10
0
1
0
–50
1000
10
100
OVERDRIVE (mV)
10
–25
75
25
0
50
TEMPERATURE (°C)
4365 G13
VOUT
GND
5V/DIV
100μF, 12Ω LOAD ON VOUT
60V SI9945 DUAL NCH MOSFET
VIN = 12V
10
20
15
VIN (V)
25
35
30
4365 G15
Turn-Off Timing
GATE
GATE
100μF, 12Ω LOAD ON VOUT
60V SI9945 DUAL NCH MOSFET
5V/DIV
VOUT
VOUT
GND
GATE
5
0
Turn-On Timing
VIN
20V/DIV
0
125
4365 G14
AC Blocking
1V/DIV
100
GND
GND
10μF, 1k LOAD ON VOUT
60V DUAL NCH MOSFET
2.5ms/DIV
4365 G16
3V/DIV
SHDN
GND
250μs/DIV
4365 G17
3V/DIV
SHDN
GND
250μs/DIV
4365 G18
4365f
5
LTC4365
PIN FUNCTIONS
Exposed Pad: Connect to device ground.
FAULT: Fault Indication Output. This high voltage open drain
output is pulled low if UV is below its monitor threshold,
if OV is above its monitor threshold, if SHDN is low, or if
VIN has not risen above VIN(UVLO).
GATE: Gate Drive Output for External N-channel MOSFETs.
An internal charge pump provides 20μA of pull-up current
and up to 9.8V of enhancement to the gate of an external
N-channel MOSFET.
When turned off, GATE is pulled just below the lower of
VIN or VOUT. When VIN goes negative, GATE is automatically connected to VIN.
GND: Device Ground.
OV: Overvoltage Comparator Input. Connect this pin to an
external resistive divider to set the desired VIN overvoltage
fault threshold. Input to an accurate, fast (1μs) comparator with a 0.5V rising threshold and 25mV of hysteresis.
When OV rises above its threshold, a 50mA current sink
pulls down on the GATE output. When OV falls back below
0.475V, and after a 36ms recovery delay waiting period,
the GATE charge pump is enabled. The low leakage current
of the OV input allows the use of large valued resistors for
the external resistive divider. Connect to GND if unused.
pull down on the GATE output with a 90μA current sink and
places the LTC4365 in low current mode (10μA). If unused,
connect to VIN. If VIN goes below ground, or if VIN rings to
60V, use a current limiting resistor of at least 100k.
UV: Undervoltage Comparator Input. Connect this pin
to an external resistive divider to set the desired VIN
undervoltage fault threshold. Input to an accurate, fast
(1μs) comparator with a 0.5V falling threshold and 25mV
of hysteresis. When UV falls below its threshold, a 50mA
current sink pulls down on the GATE output. When UV
rises back above 0.525V, and after a 36ms recovery
delay waiting period, the GATE charge pump is enabled.
The low leakage current of the UV input allows the use
of large valued resistors for the external resistive divider.
If unused, connect to VIN. While connected to VIN, if VIN
goes below ground, or if VIN rings to 60V, use a current
limiting resistor of at least 100k.
VIN: Power Supply Input. Maximum protection range:
–40V to 60V. Operating range: 2.5V to 34V.
VOUT: Output Voltage Sense Input. This pin senses the voltage at the output side of the external N-channel MOSFET.
The GATE charge pump voltage is referenced to VOUT. It
is used as the charge pump input when VOUT is greater
than approximately 6.5V.
SHDN: Shutdown Control Input. SHDN high enables the
GATE charge pump which in turn enhances the gate of an
external N-channel MOSFET. A low on SHDN generates a
4365f
6
LTC4365
BLOCK DIAGRAM
REVERSE
PROTECTION
VIN
–40V TO 60V
GATE
–
+
CLOSES SWITCH
WHEN VIN IS NEGATIVE
5V INTERNAL
SUPPLY
LDO
6.5V INTERNAL
SUPPLY
VOUT
ENABLE
2.2V
UVLO
UV
SHDN
DELAY TIMERS
+
+
IGATE
FAULT
OFF
TURN
OFF
SHDN
LOGIC
–
OV
GATE
CHARGE
PUMP
f = 400kHz
50mA
25mV
HYSTERESIS
90μA
FAULT
GATE PULLDOWN
–
0.5V
GND
4365 BD
4365f
7
LTC4365
OPERATION
Many of today’s electronic systems get their power from
external sources such as a wall wart adapter, batteries
and custom power supplies. These power sources are
often unreliable, wired incorrectly, out of spec, or just
plain wrong. This can lead to supply voltages that are too
high, too low, or even negative. If these power sources
are applied directly to the electronic systems, the systems
could be subject to damage. The LTC4365 is an input
voltage fault protection N-channel MOSFET controller.
The part isolates an input supply from its load to protect
the load from unexpected supply voltage conditions, while
providing a low loss path for qualified power.
To protect electronic systems from improperly connected
power supplies, system designers will often add discrete
diodes, transistors and high voltage comparators. The
high voltage comparators enable system power only if
the input supply falls within a desired voltage window.
A Schottky diode or P-channel MOSFET typically added
in series with the supply protects against reverse supply
connections.
The LTC4365 provides accurate overvoltage and
undervoltage comparators to ensure that power is applied to the system only if the input supply meets the user
selectable voltage window. Reverse supply protection
circuits automatically isolate the load from negative input
voltages. During normal operation, a high voltage charge
pump enhances the gate of external N-channel power
MOSFETs. Power consumption is 10μA during shutdown
and 125μA while operating. The LTC4365 integrates all
these functions in tiny TSOT-23 and 3mm × 2mm DFN
packages.
APPLICATIONS INFORMATION
The LTC4365 is an N-channel MOSFET controller that
protects a load from faulty supply connections. A basic
application circuit using the LTC4365 is shown in Figure 1.
The circuit provides a low loss connection from VIN to
VOUT as long as the voltage at VIN is between 3.5V and
SI4946
60V DUAL
VIN
12V NOMINAL
VOUT
3.5V TO 18V
M1
M2
+
COUT
100μF
18V. Voltages at VIN outside of the 3.5V to 18V range are
prevented from getting to the load and can be as high as
60V and as low as –40V. The circuit of Figure 1 protects
against negative voltages at VIN as shown. No other external components are needed.
During normal operation, the LTC4365 provides up to
9.8V of gate enhancement to the external back-to-back
N-channel MOSFETs. This turns on the MOSFET, thus
connecting the load at VOUT to the supply at VIN.
GATE Drive
GATE
VIN
R5
100k
R3
1820k
VOUT
The LTC4365 turns on the external N-channel MOSFETs
by driving the GATE pin above VOUT. The voltage difference between the GATE and VOUT pins (gate drive) is a
function of VIN and VOUT.
LTC4365
SHDN
FAULT
UV
R2
243k
OV
R1
59k
OV = 18V
UV = 3.5V
GND
4365 F01
Figure 1. LTC4365 Protects Load from –40V to
60V VIN Faults
4365f
8
LTC4365
APPLICATIONS INFORMATION
Figure 2 highlights the dependence of the gate drive on VIN
and VOUT. When system power is first turned on (SHDN
low to high, VOUT = 0V), gate drive is at a maximum for all
values of VIN. This helps prevent start-up problems into
heavy loads by ensuring that there is enough gate drive
to support the load.
As VOUT ramps up from 0V, the absolute value of the GATE
voltage remains fixed until VOUT is greater than the lower
of (VIN –1V) or 6V. Once VOUT crosses this threshold,
gate drive begins to increase up to a maximum of 9.8V
(for VIN ≥ 12V). The curves of Figure 2 were taken with
a GATE load of –1μA. If there were no load on GATE, the
gate drive for each VIN would be slightly higher.
Note that when VIN is at the lower end of the operating
range, the external N-channel MOSFET must be selected
with a corresponding lower threshold voltage.
The LTC4365 provides two accurate comparators to monitor for overvoltage (OV) and undervoltage (UV) conditions
at VIN. If the input supply rises above the user adjustable
OV threshold, the gate of the external MOSFET is quickly
turned off, thus disconnecting the load from the input.
Similarly, if the input supply falls below the user adjustable UV threshold, the gate of the external MOSFET also
is quickly turned off. Figure 3 shows a UV/OV application
for an input supply of 12V.
12V
UV
UVTH = 3.5V
R1
59k
8
0.5V
–
+
25mV
OV
COMPARATOR
OV
OVTH = 18V
VIN = 30V
UV
COMPARATOR
R3
1820k
T = 25°C
IGATE = –1μA
10
LTC4365
VIN
R2
243k
12
ΔVGATE (V)
Overvoltage and Undervoltage Protection
DISCHARGE GATE
WITH 50mA SINK
+
25mV
0.5V
–
6
4365 F03
VIN = 12V
4
VIN = 5V
2
Figure 3. UV, OV Comparators Monitor 12V Supply
VIN = 3.3V
VIN = 2.5V
0
0
3
6
9
VOUT (V)
12
15
4365 F02
Figure 2. Gate Drive (GATE – VOUT) vs VOUT
Table 1 lists some external MOSFETs compatible with
different VIN supply voltages.
Table 1. Dual MOSFETs for Various Supply Ranges
VIN
MOSFET
V TH(MAX)
VGS(MAX)
VDS(MAX)
2.5V
SiB914
0.8V
5V
8V
3.3V
Si5920
1.0V
5V
8V
5V
Si7940
1.5V
8V
12V
≤30V
Si4230
3.0V
20V
30V
≤60V
Si9945
3.0V
20V
60V
The external resistive divider allows the user to select
an input supply range that is compatible with the load at
VOUT. Furthermore, the UV and OV inputs have very low
leakage currents (typically < 1nA at 100°C), allowing for
large values in the external resistive divider. In the application of Figure 3, the load is connected to the supply only if
VIN lies between 3.5V and 18V. In the event that VIN goes
above 18V or below 3.5V, the gate of the external N-channel
MOSFET is immediately discharged with a 50mA current
sink, thus isolating the load from the supply.
4365f
9
LTC4365
APPLICATIONS INFORMATION
Figure 4 shows the timing associated with the UV pin.
Once a UV fault propagates through the UV comparator
(tFAULT), the FAULT output is asserted low and a 50mA
current sink discharges the GATE pin. As VOUT falls, the
GATE pin tracks VOUT.
UV
VUV
tFAULT
FAULT
tGATE(FAST)
tRECOVERY
EXTERNAL N-CHANNEL MOSFET
TURNS OFF
GATE
4365 F04
Figure 4. UV Timing (OV < (VOV – VOVHYST), SHDN > 1.2V)
Figure 5 shows the timing associated with the OV pin.
Once an OV fault propagates through the OV comparator
(tFAULT), the FAULT output is asserted low and a 50mA
current sink discharges the GATE pin. As VOUT falls, the
GATE pin tracks VOUT.
OV
VOV
R1+R2 =
R3 = 2 •
I UV
VOS(UV)
I UV
(
• UV TH – 0.5V
)
3. Select the desired VIN OV trip threshold, OV TH. Find
the values of R1 and R2:
VOS(UV)
tFAULT
I UV
R1=
FAULT
tGATE(FAST)
VOS(UV)
2. Select the desired VIN UV trip threshold, UV TH. Find
the value of R3:
VOV – VOVHYST
tFAULT
GATE
The following 3-step procedure helps select the resistor
values for the resistive divider of Figure 3. This procedure
minimizes UV and OV offset errors caused by leakage
currents at the respective pins.
1. Choose maximum tolerable offset at the UV pin,
VOS(UV). Divide by the worst case leakage current at
the UV pin, IUV (10nA). Set the sum of R1 + R2 equal
to VOS(UV) divided by 10nA. Note that due to the
presence of R3, the actual offset at UV will be slightly
lower:
VUV + VUVHYST
tFAULT
Procedure for Selecting UV/OV External Resistor Values
+R3
2 • OV TH
tRECOVERY
EXTERNAL N-CHANNEL MOSFET
TURNS OFF
4365 F05
Figure 5. OV Timing (UV > (VUV + VUVHYST), SHDN > 1.2V)
When both the UV and OV faults are removed, the external
MOSFET is not immediately turned on. The input supply
must remain within the user selected power good window
for at least 36ms (tRECOVERY ) before the load is again
connected to the supply. This recovery timeout period
filters noise (including line noise) at the input supply and
prevents chattering of power at the load.
R2 =
VOS(UV)
I UV
– R1
The example of Figure 3 uses standard 1% resistor values.
The following parameters were selected:
VOS(UV) = 3mV
IUV = 10nA
UV TH = 3.5V
OV TH = 18V
4365f
10
LTC4365
APPLICATIONS INFORMATION
The resistor values can then be solved:
1. R1+ R2 =
2. R3 = 2 •
detected, an internal switch connects the gates of the
external back-to-back N-channel MOSFETs to the negative input supply.
3mV
= 300k
10nA
As shown in Figure 6, external back-to-back N-channel
MOSFETs are required for reverse supply protection. When
VIN goes negative, the reverse VIN comparator closes the
internal switch, which in turn connects the gates of the
external MOSFETs to the negative VIN voltage. The body
diode (D1) of M1 turns on, but the body diode (D2) of M2
remains in reverse blocking mode. This means that the
common source connection of M1 and M2 remains about
a diode drop higher than VIN. Since the gate voltage of
M2 is shorted to VIN, M2 will be turned off and no current can flow from VIN to the load at VOUT. Note that the
voltage rating of M2 must withstand the reverse voltage
excursion at VIN.
3mV
• (3.5V – 0.5V) =1.8M
10nA
The closest 1% value: R3 = 1.82M:
3. R1 =
300k +1.82M
= 58.9k
2 • 18V
The closest 1% value: R1 = 59k:
R2 = 300k – 59k = 241k
The closest 1% value: R2 = 243k
Therefore: OV = 17.93V, UV = 3.51V.
Reverse VIN Protection
The LTC4365’s rugged and hot-swappable VIN input helps
protect the more sensitive circuits at the output load. If
the input supply is plugged in backwards, or a negative
supply is inadvertently connected, the LTC4365 prevents
this negative voltage from passing to the output load.
The LTC4365 employs a novel, high speed reverse supply voltage monitor. When the negative VIN voltage is
D1
Figure 7 illustrates the waveforms that result when VIN
is hot plugged to –20V. VIN, GATE and VOUT start out at
ground just before the connection is made. Due to the
parasitic inductance of the VIN and GATE connections, the
voltage at the VIN and GATE pins ring significantly below
–20V. Therefore, a 40V N-channel MOSFET was selected
to survive the overshoot.
The speed of the LTC4365 reverse protection circuits is
evident by how closely the GATE pin follows VIN during
the negative transients. The two waveforms are almost
indistinguishable on the scale shown.
D2
GND
VIN = –40V
TO LOAD
+
M1
VIN
M2
GATE
VOUT
COUT
VOUT
5V/DIV
VIN
–20V
GATE
LTC4365
REVERSE VIN
COMPARATOR
+
GND
–
500ns/DIV
CLOSES SWITCH
WHEN VIN IS NEGATIVE
4365 F07
Figure 7. Hot Swapping VIN to –20V
4365 F06
Figure 6. Reverse VIN Protection Circuits
4365f
11
LTC4365
APPLICATIONS INFORMATION
The trace at VOUT, on the other hand, does not respond
to the negative voltage at VIN, demonstrating the desired
reverse supply protection. The waveforms of Figure 7 were
captured using a 40V dual N-channel MOSFET, a 10μF
ceramic output capacitor and no load current on VOUT.
Recovery Timer
The LTC4365 has a recovery delay timer that filters noise
at VIN and helps prevent chatter at VOUT. After either an OV
or UV fault has occurred, the input supply must return to
the desired operating voltage window for at least 36ms in
order to turn the external MOSFET back on as illustrated
in Figures 4 and 5.
to track VOUT, thus keeping the external MOSFETs off as
VOUT decays. Note that when VOUT < 4.5V, the GATE pin
is pulled to within 400mV of ground.
Gentle gate turn off reduces load current slew rates and
mitigates voltage spikes due to parasitic inductances.
To further decrease GATE pin slew rate, place a capacitor across the gate and source terminals of the external
MOSFETs. The waveforms of Figure 9 were captured using
the Si4230 dual N-channel MOSFETs, and a 2A load with
100μF output capacitor.
VIN = 12V
T = 25°C
GATE
Going out of and then back into fault in less than 36ms
will keep the MOSFET off continuously. Similarly, coming
out of shutdown (SHDN low to high) triggers an 800μs
start-up delay timer (see Figure 10).
VOUT
5V/DIV
SHDN
GND
The recovery timer is also active while the LTC4365 is
powering up. The 36ms timer starts once VIN rises above
VIN(UVLO) and VIN lies within the user selectable UV/OV
power good window. See Figure 8.
4365 F9
100μs/DIV
Figure 9. Gentle Shutdown: GATE Tracks VOUT as
VOUT Decays
VIN(UVLO)
VIN
FAULT Status
tRECOVERY
GATE
MOSFET OFF
MOSFET ON
The FAULT high voltage open drain output is driven low if
SHDN is asserted low, if VIN is outside the desired UV/OV
voltage window, or if VIN has not risen above VIN(UVLO).
Figures 4, 5 and 10 show the FAULT output timing.
4365 F08
SHDN
Figure 8. Recovery Timing During Power-On
(OV = GND, UV = SHDN = VIN)
Gentle Shutdown
The SHDN input turns off the external MOSFETs in a
gentle, controlled manner. When SHDN is asserted low,
a 90μA current sink slowly begins to turn off the external
MOSFETs.
Once the voltage at the GATE pin falls below the voltage
at the VOUT pin, the current sink is throttled back and a
feedback loop takes over. This loop forces the GATE voltage
tGATE(SLOW)
tSTART
GATE
ΔVGATE
GATE = VOUT
VOUT
tSHDN(F)
FAULT
4365 F10
Figure 10. Gentle Shutdown Timing
4365f
12
LTC4365
APPLICATIONS INFORMATION
Select Between Two Input Supplies
Limiting Inrush Current During Turn-On
With the part in shutdown, the VIN and VOUT pins can be
driven by separate power supplies. The LTC4365 then
automatically drives the GATE pin just below the lower of
the two supplies, thus turning off the external back-to-back
MOSFETs. The application of Figure 11 uses two LTC4365s
to select between two power supplies. Care should be taken
to ensure that only one of the two LTC4365s is enabled
at any given time.
The LTC4365 turns on the external N-channel MOSFET
with a 20μA current source. The maximum slew rate at
the GATE pin can be reduced by adding a capacitor on
the GATE pin:
V1
M1
M2
Since the MOSFET acts like a source follower, the slew
rate at VOUT equals the slew rate at GATE.
VOUT
LTC4365
OUT
SHDN
SEL OUT
0
V1
1
V2
M1
M2
GATE
IINRUSH =
COUT
• 20µA
CGATE
For example, a 1A inrush current to a 330μF output
capacitance requires a GATE capacitance of:
V2
VIN
20µA
CGATE
Therefore, inrush current is given by:
GATE
VIN
Slew Rate =
VOUT
CGATE =
20µA • COUT
IINRUSH
CGATE =
20µA • 330µF
= 6.6nF
1A
LTC4365
SHDN
SEL
4365 F11
Figure 11. Selecting One of Two Supplies
Single MOSFET Application
When reverse VIN protection is not needed, only a single
external N-channel MOSFET is necessary. The application circuit of Figure 12 connects the load to VIN when
VIN is less than 30V, and uses the minimal set of external
components.
SI7120DN
60V
VIN
24V
The 6.8nF CGATE capacitor in the application circuit of
Figure 13 limits the inrush current to approximately 1A.
RGATE makes sure that CGATE does not affect the fast GATE
turn off characteristics during UV/OV faults, or during
reverse VIN connection. R4A and R4B help prevent high
frequency oscillations with the external N-channel MOSFET
and related board parasitics.
VOUT
+
GATE
VIN
COUT
100μF
VIN
M1
M2
R4A
10Ω
VOUT
+
R4B
10Ω
VOUT
COUT
330μF
LTC4365
SHDN
VIN
FAULT
UV
GATE
RGATE
5.1k
VOUT
CGATE
6.8nF
LTC4365
R2
2370k
OV
R1
40.2k
OV = 30V
GND
4365 F13
4365 F12
Figure 13. Limiting Inrush Current with CGATE
Figure 12. Small Footprint Single MOSFET Application
Protects Against 60V
4365f
13
LTC4365
APPLICATIONS INFORMATION
Transients During OV Fault
MOSFET Selection
The circuit of Figure 14 was used to display transients
during an overvoltage condition. The nominal input supply
is 24V and it has an overvoltage threshold of 30V. The
parasitic inductance is that of a 1 foot wire (roughly 300nH).
Figure 15 shows the waveforms during an overvoltage
condition at VIN. These transients depend on the parasitic
inductance and resistance of the wire along with the capacitance at the VIN node. D1 is an optional power clamp
(TVS, Tranzorb) recommended for applications where
the DC input voltage can exceed 24V and with large VIN
parasitic inductance. No clamp was used to capture the
waveforms of Figure 15. In order to maintain reverse supply
protection, D1 must be a bi-directional clamp rated for at
least 225W peak pulse power dissipation.
To protect against a negative voltage at VIN, the external
N-channel MOSFETs must be configured in a back-toback arrangement. Dual N-channel packages are thus the
best choice. The MOSFET is selected based on its power
handling capability, drain and gate breakdown voltages,
and threshold voltage.
VIN
24V
12 INCH WIRE
LENGTH
+
SI9945
60V
CIN
1000μF
M1
+
M2
GATE
VIN
R3
100k
VOUT
COUT
100μF
VOUT
LTC4365
SHDN
D1
OPTIONAL
Due to the high impedance nature of the charge pump that
drives the GATE pin, the total leakage on the GATE pin must
be kept low. The gate drive curves of Figure 2 were measured
with a 1μA load on the GATE pin. Therefore, the leakage
on the GATE pin must be no greater than 1μA in order to
match the curves of Figure 2. Higher leakage currents will
result in lower gate drive. The dual N-channel MOSFETs
shown in Table 1 all have a maximum GATE leakage current of 100nA. Additionally, Table 1 lists representative
MOSFETs that would work at different values of VIN.
FAULT
UV
Layout Considerations
R2
2370k
OV
R1
40.2k
9Ω
The drain to source breakdown voltage must be higher
than the maximum voltage expected between VIN and
VOUT. Note that if an application generates high energy
transients during normal operation or during Hot Swap™,
the external MOSFET must be able to withstand this
transient voltage.
The trace length between the VIN pin and the drain of the
external MOSFET should be minimized, as well as the
trace length between the GATE pin of the LTC4365 and
the gates of the external MOSFETs.
OV = 30V
GND
4365 F14
Figure 14. OV Fault with Large VIN Inductance
GATE
VOUT
VOUT
GATE
20V/DIV
GND
VIN
20V/DIV
GND
IIN
2A/DIV
Place the bypass capacitors at VOUT as close as possible
to the external MOSFET. Use high frequency ceramic
capacitors in addition to bulk capacitors to mitigate Hot
Swap ringing. Place the high frequency capacitors closest
to the MOSFET. Note that bulk capacitors mitigate ringing
by virtue of their ESR. Ceramic capacitors have low ESR
and can thus ring near their resonant frequency.
0A
250ns/DIV
4365 F15
Figure 15. Transients During OV Fault When No
Tranzorb (TVS) Is Used
4365f
14
LTC4365
PACKAGE DESCRIPTION
TS8 Package
8-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1637)
0.52
MAX
2.90 BSC
(NOTE 4)
0.65
REF
1.22 REF
1.4 MIN
3.85 MAX 2.62 REF
2.80 BSC
1.50 – 1.75
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.22 – 0.36
8 PLCS (NOTE 3)
0.65 BSC
0.80 – 0.90
0.20 BSC
0.01 – 0.10
1.00 MAX
DATUM ‘A’
0.30 – 0.50 REF
1.95 BSC
0.09 – 0.20
(NOTE 3)
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
TS8 TSOT-23 0802
DDB Package
8-Lead Plastic DFN (3mm × 2mm)
(Reference LTC DWG # 05-08-1702 Rev B)
0.61 ±0.05
(2 SIDES)
3.00 ±0.10
(2 SIDES)
R = 0.115
TYP
5
R = 0.05
TYP
0.40 ± 0.10
8
0.70 ±0.05
2.55 ±0.05
1.15 ±0.05
PACKAGE
OUTLINE
0.25 ± 0.05
0.50 BSC
2.20 ±0.05
(2 SIDES)
PIN 1 BAR
TOP MARK
(SEE NOTE 6)
0.200 REF
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
2.00 ±0.10
(2 SIDES)
0.56 ± 0.05
(2 SIDES)
0.75 ±0.05
0 – 0.05
4
0.25 ± 0.05
1
PIN 1
R = 0.20 OR
0.25 × 45°
CHAMFER
(DDB8) DFN 0905 REV B
0.50 BSC
2.15 ±0.05
(2 SIDES)
BOTTOM VIEW—EXPOSED PAD
NOTE:
1. DRAWING CONFORMS TO VERSION (WECD-1) IN JEDEC PACKAGE OUTLINE M0-229
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE
4365f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LTC4365
TYPICAL APPLICATION
LTC4365 Protects Step Down Regulator from –30V to 30V VIN Faults
CMDSH-3
SI4230 30V
DUAL N-CHANNEL
VIN
12V NOMINAL
VOUT
0.18μF
3.5V TO 18V
INPUT RANGE
BOOST
VIN
4.7μF
CERAMIC
VOUT PROTECTED
FROM –30V TO 30V
FB
GND
VC
VOUT
UPS120
4.7μF
CERAMIC
2.2nF
LTC4365
510k
OUTPUT
3.3V
2.5A
LT1765-3.3
SHDN
SYNC
GATE
VIN
1.5μH
VSW
SHDN
1820k
FAULT
UV
243k
OV
OV = 18V
UV = 3.5V
GND
59k
4365 TA02
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LTC4356
Surge Stopper Overvoltage/Overcurrent
Protection Regulator
Wide Operating Range: 4V to 80V, Reverse Protection to –60V, Adjustable
Output Clamp Voltage
LTC1696
Overvoltage Protection Controller
ThinSOT Package, 2.7V to 28V
LTC1735
High Efficiency Synchronous Step-Down
Switching Regulator
Output Fault Protection, 16-Pin SSOP
LTC1778
No RSENSE ™ Wide Input Range Synchronous
Step-Down Controller
Up to 97% Efficiency, 4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ (0.9)(VIN),
IOUT Up to 20A
LTC2909
Triple/Dual Inputs UV/OV Negative Monitor
Pin Selectable Input Polarity Allows Negative and OV Monitoring
LTC2912/LTC2913
Single/Dual UV/OV Voltage Monitor
Ads UV and OV Trip Values, ±1.5% Threshold Accuracy
LTC2914
Quad UV/OV Monitor
For Positive and Negative Supplies
LTC3727/LTC3727-1 2-Phase, Dual, Synchronous Controller
4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ 14V
LTC3827/LTC3827-1 Low IQ, Dual, Synchronous Controller
LTC3835/LTC3835-1 Low IQ, Synchronous Step-Down Controller
4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ 10V, 80μA Quiescent Current
Single Channel LTC3827/LTC3827-1
4V ≤ VIN ≤ 60V, 1.23V ≤ VOUT ≤ 36V, 120μA Quiescent Current
LT3845
Low IQ, Synchronous Step-Down Controller
LT3850
Dual, 550kHz, 2-Phase Synchronous Step-Down Dual 180° Phased Controllers, VIN 4V to 24V, 97% Duty Cycle, 4mm × 4mm
QFN-28, SSOP-28 Packages
Controller
LT4256
Positive 48V Hot Swap Controller with
Open-Circuit Detect
Foldback Current Limiting, Open-Circuit and Overcurrent Fault Output, Up to
80V Supply
LTC4260
Positive High Voltage Hot Swap Controller with
ADC and I2C
Wide Operating Range 8.5V to 80V
LTC4352
Ideal MOSFET ORing Diode
External N-Channel MOSFETs Replace ORing Diodes, 0V to 18V
LTC4354
Negative Voltage Diode-OR Controller
Controls Two N-Channel MOSFETs, 1μs Turn-Off, 80V Operation
LTC4355
Positive Voltage Diode-OR Controller
Controls Two N-Channel MOSFETs, 0.5μs Turn-Off, 80V Operation
4365f
16 Linear Technology Corporation
LT 0910 • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2010
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