GSME GMB772 Pnp si transistor suited for the output stage of 3w audio amplifier, voltage regulator, dc-dc converter and relay driver Datasheet

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMB772
TO-126 晶體管(TO-126 Transistors)
功能
PNP Si transistor suited for the output stage of 3W audio amplifier, voltage regulator, DC-DC
converter and relay driver. PNP 矽三極管,適用于 3W 輸出的音頻放大,電壓調整,DC-DC 轉
換和繼電器驅動。
■FEATURES 特點
Low saturation voltage 低飽和壓降
Excellent hFE linearity and high hFE 好線性和高的放大倍數
■DESCRIPTION
■MAXIMUM
(Ta=25℃)
RATINGS 最大額定值(T
CHARACTERISTIC
特性參數
Collector-Base Voltage
集電極-基極電壓
Collect-Emitter Voltage
集電極-發射極電壓
Emitter-Base Voltage
發射極-基極電壓
Collector Current DC
集電極電流-连续
Collector Current pulse
集電極電流-脉冲
Collector Power Dissipation
集電極耗散功率
Symbol
符號
Rating
額定值
Unit
單位
VCBO
-40
V
VCEO
-30
V
VEBO
-5.0
V
Ic
-3.0
A
Ic
-7.0
A
PC
3
W
Junction Temperature
結溫
Tj
150
℃
Storage Temperature Range
儲存溫度
Tstg
-55〜150
℃
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMB772
■ELECTRICAL
CHARACTERISTICS 電特性
(TA=25
=25℃ unless otherwise noted 如無特殊說明,溫度爲 25℃))
Characterstic
特性參數
Symbol
符號
Test Condition
測試條件
Min
TYP
Max
最小值
典型值
最大值
Unit
單位
Collector Cutoff Current
集電極截止電流
ICBO
VCB=-30V,IE=0
—
—
-1.0
μA
Emitter Cutoff Current
發射極截止電流
IEBO
VEB=-5V,IC=0
—
—
-1.0
μA
V(BR)CBO
IC=-100μA
-40
—
—
V
V(BR)CEO
IC=-10mA
-30
—
—
V
V(BR)EBO
IE=-100μA
-5
—
—
V
HFE(1)
VCE=-2V,I C=-20A
30
—
—
HFE(2)
VCE=-2V,I C=-1A
60
—
400
VCE(sat)
IC=-2A, IB=-200mA
—
—
-0.5
V
Base Saturation Voltage
基極飽和電壓
VBE(sat)
IC=-2A, IB=-200mA
—
—
-2.0
V
Transition Frequency
特徵頻率
fT
VCE=-5V,I C=-100mA
—
80
—
MHz
Collector Output Capacitance
輸出電容
Cob
VCB=-10V,IE=0,f=1MHz
—
55
—
pF
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓
Collector-Emitter Breakdown Voltage
集電極-發射極擊穿電壓
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
Collector Saturation Voltage
集電極飽和壓降
■DEVICE
MARKING 打標
GM
B772
P
GM
B772
E
■HFE RANGE
160-320
P
放大倍數分檔
200~400
200~400
E
—
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMB772
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