DIODES DXT651

DXT651
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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NEW PRODUCT
Features
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Epitaxial Planar Die Construction
Complementary PNP Type Available (DXT751)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT89-3L
3 E
Mechanical Data
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•
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C 4
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
Maximum Ratings
COLLECTOR
2,4
2 C
1
BASE
1 B
3
EMITTER
Schematic and Pin Configuration
TOP VIEW
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
80
60
5
3
6
Unit
V
V
V
A
A
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes:
Symbol
PD
RθJA
TJ, TSTG
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS31184 Rev. 3 - 2
1 of 4
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DXT651
© Diodes Incorporated
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
80
60
5
⎯
⎯
⎯
V
V
V
Collector-Base Cutoff Current
ICBO
⎯
⎯
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
IEBO
⎯
⎯
⎯
⎯
⎯
0.1
10
0.1
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(SAT)
VBE(ON)
⎯
⎯
0.08
0.23
0.85
0.8
0.3
0.6
1.25
1
V
V
V
V
hFE
70
100
80
40
200
200
185
120
⎯
300
⎯
⎯
⎯
fT
Cobo
ton
toff
140
⎯
⎯
⎯
200
⎯
35
230
⎯
30
⎯
⎯
MHz
pF
ns
ns
DC Current Gain
AC CHARACTERISTICS
Transition Frequency
Output Capacitance
Switching Times
Notes:
4.
μA
μA
Test Conditions
IC = 100μA, IE = 0
IC = 10mA, IB = 0
IE = 100μA, IC = 0
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 100°C
VEB = 4V, IC = 0
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
IC = 1A, IB = 100mA
VCE = 2V, IC = 1A
VCE = 2V, IC = 50mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 1A
VCE = 2V, IC = 2A
VCE = 5V, IC = 100mA, f = 100MHz
VCB = 10V, f = 1MHz
VCC = 10V. IC = 500mA,
IB1 = IB2 = 50mA
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2.0
1.2
1.8
IB = 10mA
1.0
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (W)
NEW PRODUCT
Electrical Characteristics
0.8
0.6
0.4
0.2
1.6
IB = 8mA
1.4
1.2
IB = 6mA
1.0
0.8
IB = 4mA
0.6
0.4
IB = 2mA
0.2
0
25
50
75
100
125
150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
0
DS31184 Rev. 3 - 2
0.0
5
1
2
3
4
VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage
2 of 4
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0
DXT651
© Diodes Incorporated
0.35
350
TA = 150°C
250
TA = 85°C
200
VCE(SAT), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
300
TA = 25°C
150
T A = -55°C
100
0.3
IC/IB = 10
0.25
0.2
0.15
TA = 150°C
0.1
T A = 85°C
TA = 25°C
0.05
50
TA = -55°C
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Fig. 3 Typical DC Current Gain
vs. Collector Current
0
0.0001
10
1.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
VCE = 2V
1.0
0.8
VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V)
VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V)
0
0.001
IC /IB = 10
1.0
0.8
TA = -55°C
TA = -55°C
0.6
0.6
TA = 25°C
0.4
TA = 85°C
0.0
0.0001
TA = 85°C
0.2
TA = 150°C
0.2
TA = 25°C
0.4
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
TA = 150°C
0
0.0001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
250
50
fT, GAIN-BANDWIDTH PRODUCT (MHz)
60
Cobo, OUTPUT CAPACITANCE (pF)
NEW PRODUCT
VCE = 2V
f = 1MHz
40
30
20
10
0
0
5
10
15
20
25
30
35 40
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Output Capacitance Characteristics
DS31184 Rev. 3 - 2
200
150
100
VCE = 5V
f = 100MHz
50
0
0
20
40
60
80
100
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
3 of 4
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DXT651
© Diodes Incorporated
Ordering Information (Note 5)
Device
DXT651-13
NEW PRODUCT
Notes:
5.
Packaging
SOT89-3L
Shipping
2500/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
(Top View)
KN2 = Product Type Marking Code
= Manufacturer’s Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
YWW
KN2
Package Outline Dimensions
0
20
0.
R
D1
SOT89-3L
C
Dim
E
Min
Max
Typ
A
1.40
1.60
1.50
B
0.45
0.55
0.50
B1
0.37
0.47
0.42
C
0.35
0.43
0.38
H
L
B
B1
8°
e
(4X
)
D
4.40
4.60
4.50
D1
1.50
1.70
1.60
E
2.40
2.60
2.50
e
—
—
1.50
H
3.95
4.25
4.10
L
0.90
1.20
1.05
A
All Dimensions in mm
D
Suggested Pad Layout
1.7
2.7
0.4
1.9
1.3
0.9
3.0
Unit: mm
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31184 Rev. 3 - 2
4 of 4
www.diodes.com
DXT651
© Diodes Incorporated