A Product Line of Diodes Incorporated ZXTP03200BZ 2 00 V PN P L OW V C E ( s a t ) TRAN SIST OR IN SOT -89 Please click here to visit our online spice models database. Features • • • • • • • • • • Mechanical Data BVCEO > -200V BVECO > -2V Continuous current IC(cont) = 2A VCE(sat < -160mV @ -1A RCE(sat)=130mΩ PD = 2.4W 2 Amps continuous current Up to 5 Amps peak current Very low saturation voltage Enhanced switching performance • • • • • Case: SOT-89 UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.052 grams (approximate) Applications • DC-DC Convertors SOT-89 Top View Device symbol Pin Configuration Ordering Information Product ZXTP03200BZTA Marking 1N2 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1000 Marking Information 1N2 = Product type Marking Code ZXTP03200BZ Document Number DS31902 Rev. 2 - 2 1 of 7 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP03200BZ 2 00 V PN P L OW V C E ( s a t ) TRAN SIST OR IN SOT -89 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current (Note a) Base Current Peak Pulse Current Symbol VCBO VCEO VEBO IC IB ICM Value -220 -200 -7 -2 -1 -5 Unit V V V A A A Symbol Value 1.1 8.8 1.8 14.4 2.4 19.2 4.46 35.7 38.7 309.6 117 68 51 28 3.23 -55 to +150 Unit W mW /°C W mW /°C W mW /°C W mW /°C W mW /°C °C/W °C/W °C/W °C/W °C/W °C Thermal Characteristics Characteristic Power Dissipation at TA = 25°C (Note a) Linear derating factor Power Dissipation at TA = 25°C (Note b) Linear derating factor Power Dissipation at TA = 25°C (Note c) Linear derating factor Power Dissipation at TA = 25°C (Note d) Linear derating factor Power Dissipation at TA = 25°C (Note e) Linear derating factor Junction to Ambient (Note a) Junction to Ambient (Note b) Junction to Ambient (Note c) Junction to Ambient (Note d) Junction to Lead (Note e) Operating and Storage Temperature Range Notes: PD PD PD PD PD RθJA RθJA RθJA RθJA RθJL TJ, TSTG a. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions b. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions. c. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions. d. As (c) above measured at t<5 seconds e. Junction to lead from collector Tab. Typical ZXTP03200BZ Document Number DS31902 Rev. 2 - 2 2 of 7 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP03200BZ 2 00 V PN P L OW V C E ( s a t ) TRAN SIST OR IN SOT -89 Thermal Characteristics and Derating information ZXTP03200BZ Document Number DS31902 Rev. 2 - 2 3 of 7 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP03200BZ 2 00 V PN P L OW V C E ( s a t ) TRAN SIST OR IN SOT -89 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note f) Emitter-Base Breakdown Voltage Symbol V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO Collector-Base Cutoff Current ICBO Emitter Cutoff Current IEBO Static Forward Current Transfer Ratio (Note f) Min -220 -220 -220 -7 Typ -245 -245 -225 -8.4 <1 <1 100 100 20 hFE 195 179 50 5 Max -50 -0.5 -10 Unit V V V V nA µA nA 300 Collector-Emitter Saturation Voltage (Note f) VCE(SAT) -37 -120 -130 -160 -50 -155 -160 -260 mV mV mV mV Base-Emitter Saturation Voltage (Note f) Base-Emitter Turn-On Voltage (Note f) Output Capacitance (Note f) VBE(sat) VBE(ON) Cobo -940 -840 31 -1100 -1000 mV mV pF Transition Frequency fT 105 MHz Delay Time Rise Time Storage Time Fall Time td tr Ts Tf 21 18 680 75 ns ns ns ns Notes: Test Condition IC = -100µA IC = -1µA, RBE ≤ 1kΩ IC = -10mA IE = -100µA VCB = -200V VCB = -200V, Tamb = 100°C VEB = -6V IC = -10mA, VCE = -5V IC = -1A, VCE = -5V IC = -2A, VCE = -5V IC = -5A, VCE = -5V IC = -100mA, IB = -10mA IC = -500mA, IB = -25mA IC = -1A, IB = -100mA IC = -2A, IB = -400mA IC = -2A, IB = -400mV IC = -2A, VCE = -5V VCB = -10V. f = 1MHz VCE = -10V, IC = -100mA f = 50MHz VCC = -50V, IC = -1A IB1 = -IB2 = -100mA f. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ≤ 2% ZXTP03200BZ Document Number DS31902 Rev. 2 - 2 4 of 7 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP03200BZ 2 00 V PN P L OW V C E ( s a t ) TRAN SIST OR IN SOT -89 Typical Characteristics ZXTP03200BZ Document Number DS31902 Rev. 2 - 2 5 of 7 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP03200BZ 2 00 V PN P L OW V C E ( s a t ) TRAN SIST OR IN SOT -89 Package Outline Dimensions Suggested Pad Layout ZXTP03200BZ Document Number DS31902 Rev. 2 - 2 6 of 7 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP03200BZ 2 00 V PN P L OW V C E ( s a t ) TRAN SIST OR IN SOT -89 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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