Renesas HAF1009S Silicon p channel mos fet series power switching Datasheet

HAF1009(L), HAF1009(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0029-0100Z
(Previous ADE-208-1525 (Z))
Rev.1.00
May.13.2003
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
•
•
•
•
Logic level operation (-4 to -6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
2, 4
D
4
4
1
Gate resistor
G
Tempe–
rature
sencing
circuit
Latch
circuit
1
1
Gate
shut–
down
circuit
S
3
Rev.1.00, May.13.2003, page 1 of 10
2
2
3
3
1. Gate
2. Drain
3. Source
4. Drain
HAF1009(L), HAF1009(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
–16
V
Gate to source voltage
VGSS
2.5
V
Drain current
ID
–40
A
–80
A
Note1
Drain peak current
ID (pulse)
Body-drain diode reverse drain
current
IDR
–40
A
Channel dissipation
PchNote2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Typical Operation Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Input voltage
VIH
–3.5
—
—
V
VIL
—
—
–1.2
V
IIH1
—
—
–100
µA
Vi = –8 V, VDS = 0
IIH2
—
—
–50
µA
Vi = –3.5 V, VDS = 0
IIL
—
—
–1
µA
Vi = –1.2 V, VDS = 0
Input current
(Gate non shut down)
Input current
(Gate shut down)
Test Conditions
IIH(sd)1
—
–0.8
—
mA
Vi = –8 V, VDS = 0
IIH(sd)2
—
–0.35
—
mA
Vi = –3.5 V, VDS = 0
Shut down temperature
Tsd
—
175
—
°C
Channel temperature
Gate operation voltage
Vop
–3.5
—
–12
V
Rev.1.00, May.13.2003, page 2 of 10
HAF1009(L), HAF1009(S)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain current
ID1
–10
—
—
A
VGS = –3.5, VDS = –2 V
Drain current
ID2
—
—
–10
mA
VGS = –1.2V, VDS = –2 V
Drain to source breakdown
voltage
V(BR)DSS
–60
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS –16
—
—
V
IG = –800 µA, VDS = 0
Gate to source breakdown
voltage
V(BR)GSS 2.5
—
—
V
IG = 100 µA, VDS = 0
Gate to source leak current
IGSS1
—
—
–100
µA
VGS = –8 V, VDS = 0
IGSS2
—
—
–50
µA
VGS = –3.5 V, VDS = 0
IGSS3
—
—
–1
µA
VGS = –1.2 V, VDS = 0
IGSS4
—
—
100
µA
VGS = 2.4 V, VDS = 0
IGS(OP)1
—
–0.8
—
mA
VGS = –8 V, VDS = 0
IGS(OP)2
—
–0.35
—
mA
VGS = –3.5 V, VDS = 0
Zero gate voltage drain
current
IDSS
—
—
–10
µA
VDS = –60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.1
—
–2.15
V
VDS = –10 V, ID = –1 mA
Forward transfer admittance
|yfs|
8.4
14.8
—
S
ID = –20 A, VDS = –10 VNote3
Static drain to source on state RDS(on)
—
33
50
mΩ
ID = –20 A, VGS = –4 VNote3
resistance
RDS(on)
—
20
27
mΩ
ID = –20 A, VGS = –10 VNote3
Output capacitance
Coss
—
1500
—
pF
VDS = –10 V, VGS = 0, f = 1 MHz
Turn-on delay time
td(on)
—
10.6
—
µs
Rise time
tr
—
45
—
µs
VGS = -10 V, ID= –20 A,
RL = 1.5 Ω
Turn-off delay time
td(off)
—
12
—
µs
Fall time
tf
—
13
—
µs
Body–drain diode forward
voltage
VDF
—
–0.95
—
V
IF = –40 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
100
—
ns
IF = –40 A, VGS = 0
diF/dt = 50 A/µs
Over load shut down
tos1
—
4.1
—
ms
VGS = –5 V, VDD = –16 V
tos2
—
1.5
—
ms
VGS = –5 V, VDD = –24 V
Input current (shut down)
operation time
Note4
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
Rev.1.00, May.13.2003, page 3 of 10
HAF1009(L), HAF1009(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
-500
Drain Current ID (A)
60
40
20
0
50
100
Case Temperature
-50
Drain Current ID (A)
Thermal shut down
operation area
-200
-40
-30
150
-100
200
0
-20
DC
-10
PW
Op
er
at
-5
Operation
-2 in this area
-1 is limited by RDS(on)
-1
-2
ion
-50
-8 V
-20
-10
=
c=
µs
m
s
10
m
(T
25
s
°C
)
-5
-10 -20
-50 -100
Typical Transfer Characteristics
V DS = -10 V
Pulse Test
-4 V
VGS = -3.5 V
1
Drain to Source Voltage VDS (V)
Tc (°C)
-10 V
10
-0.5
Typical Output Characteristics
-6 V
-5 V
-50
-0.5 Ta = 25°C
-0.3
Drain Current ID (A)
Channel Dissipation
Pch (W)
80
-40
Tc = -25°C
25°C
-30
75°C
-20
-10
75°C
25°C
Pulse Test
0
-2
-4
-6
-8
-10
Drain to Source Voltage VDS (V)
Rev.1.00, May.13.2003, page 4 of 10
Tc = -25°C
0
-2
-4
-6
-8
-10
Gate to Source Voltage VGS (V)
Pulse Test
-1.6
-1.2
I D = -40 A
-0.8
-20 A
-0.4
-10 A
Drain to Source On State Resistance
RDS(on) (mΩ)
0
-2
-4
-6
Gate to Source Voltage
-8
-10
80
I D = -40 A
60
-20 A
V GS = -4 V
-40 A
-10 A
-20 A
20
-10 A
V GS = -10 V
0
-25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.1.00, May.13.2003, page 5 of 10
Pulse Test
50
V GS = -4 V
20
-10 V
10
5
2
1
-0.1
-0.5 -1
-5 -10
-50 -100
Drain Current ID (A)
(V)
VGS
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
40
Static Drain to Source Sate Resistance
vs. Drain Current
100
-2.0
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source On State Resistance
RDS(on) (mΩ)
HAF1009(L), HAF1009(S)
100
V DS = -10 V
50 Pulse Test
Tc = -25°C
20
10
5
25°C
2
1
0.5 75°C
0.2
0.1
-0.1
-1
-10
Drain Current ID (A)
-100
HAF1009(L), HAF1009(S)
Body to Drain Diode Reverse
recovery Time
Switching Time t (µs)
Reverse Recovery Time trr (ns)
500
500
200
100
50
20
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
10
-0.1
Switching Characteristics
1000
1000
200
tf
100
tr
50 t
d(off)
20
10
5
t d(on)
2
V GS = -10 V, VDD = -30 V
PW = 300 µs, duty < 1 %
1
-0.5 -1
-5 -10
Reverse Drain Current
-50 -100
IDR
-0.1 -0.2 -0.5 -1
(A)
Reverse Drain Current vs.
Source to Drain Voltage
-5 -10 -20
10000
VGS = 0
f = 1 MHz
(A)
Pulse Test
Capacitance C (pF)
-40
-30
-10 V
-20
VGS = 0 V
1000
-5 V
-10
0
-50 -100
ID (A)
Typical capacitance vs.
Drain to Source Voltage
-50
Reverse Drain Current IDR
-2
Drain Current
100
-0.4
-0.8
-1.2
Source to Drain Voltage
Rev.1.00, May.13.2003, page 6 of 10
-1.6
-2.0
VSD (V)
0
-10
-20
-30
-40
-50
-60
Drain to Source Voltage VDS (V)
HAF1009(L), HAF1009(S)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage
VGS (V)
-12
-10
-8
VDD = -16 V
-6
-4
-24V
-2
0
0.0001
0.001
0.1
0.01
200
180
160
140
120
ID = -5 A
100
-0
-2
-4
-6
Gate to Source Voltage
Shutdown Time of Load-Short Test
Pw (S)
-8
-10
VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γs (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.01
10 µ
0.2
θ ch - c(t) = γs (t) • θ ch - c
θ ch - c = 2.5°C/W, Tc = 25°C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
100 µ
PW
T
PW
T
1m
10 m
Pulse Width PW (S)
Rev.1.00, May.13.2003, page 7 of 10
D=
100 m
1
10
HAF1009(L), HAF1009(S)
Package Dimensions
As of January, 2003
4.44 ± 0.2
10.2 ± 0.3
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
11.0 ± 0.5
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
(1.4)
Unit: mm
2.49 ± 0.2
0.4 ± 0.1
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00, May.13.2003, page 8 of 10
LDPAK (L)
—
—
1.40 g
HAF1009(L), HAF1009(S)
As of January, 2003
Unit: mm
(1.5)
10.0
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.7
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00, May.13.2003, page 9 of 10
LDPAK (S)-(1)
—
—
1.30 g
HAF1009(L), HAF1009(S)
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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