Microsemi APTM10DDAM09T3G Dual boost chopper mosfet power module Datasheet

APTM10DDAM09T3G
Dual Boost chopper
MOSFET Power Module
13 14
CR1
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
CR2
22
7
23
8
Features
• Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Q2
Q1
26
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
23 22
20 19 18
29
16
30
15
31
14
13
32
2
3
4
7
VDSS = 100V
RDSon = 9mΩ typ @ Tj = 25°C
ID = 139A @ Tc = 25°C
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
boost of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Max ratings
Unit
100
V
Tc = 25°C
139
ID
Continuous Drain Current
A
Tc = 80°C
100 *
IDM
Pulsed Drain current
430
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
10
mΩ
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
mJ
EAS
Single Pulse Avalanche Energy
3000
* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature
greater than 30°C for the connectors.
July, 2006
Parameter
Drain - Source Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTM10DDAM09T3G – Rev 1
Symbol
VDSS
APTM10DDAM09T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V,VDS = 100V
VGS = 0V,VDS = 80V
VGS = 10V, ID = 69.5A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
IRM
IF
VF
Min
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Unit
Max
Unit
Test Conditions
pF
nC
70
ns
95
125
552
µJ
604
608
µJ
641
Min
Typ
Max
200
IF = 100A
VR = 133V
di/dt =200A/µs
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Unit
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
IF = 100A
IF = 200A
IF = 100A
mΩ
V
nA
35
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 139A, R G = 5Ω
VR=200V
µA
180
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 139A, R G = 5Ω
DC Forward Current
Diode Forward Voltage
Typ
9875
3940
1470
350
Max
100
500
10
4
±100
60
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
9
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ID = 139A
R G = 5Ω
Symbol Characteristic
Typ
2
VGS = 10V
VBus = 50V
ID =139A
Chopper diode ratings and characteristics
VRRM
Min
Tj = 25°C
Tj = 125°C
250
500
Tj = 125°C
100
1
1.4
0.9
Tj = 25°C
60
Tj = 125°C
Tj = 25°C
110
200
Tj = 125°C
840
µA
A
V
July, 2006
IDSS
Characteristic
ns
nC
2–6
APTM10DDAM09T3G – Rev 1
Symbol
APTM10DDAM09T3G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Transistor
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
To heatsink
M4
Max
0.32
0.55
2500
-40
-40
-40
2.5
RT =
Min
R 25
°C/W
V
150
125
100
4.7
110
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
Unit
Typ
50
3952
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

SP3 Package outline (dimensions in mm)
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTM10DDAM09T3G – Rev 1
July, 2006
28
17
1
APTM10DDAM09T3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
Single Pulse
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
120
VGS=15V, 10V & 9V
500
ID, Drain Current (A)
400
300
8V
200
7V
6V
100
0
V DS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
80
60
40
T J=25°C
20
T J=125°C
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
1.2
Normalized to
V GS=10V @ 69.5A
1.1
V GS=10V
1
VGS=20V
0.9
1
2
3
4
5
6
VGS , Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
140
RDS(on) vs Drain Current
ID, DC Drain Current (A)
0.8
120
100
80
60
40
20
0
0
50
100
150
200
ID, Drain Current (A)
25
50
75
100
125
150
July, 2006
RDS(on) Drain to Source ON Resistance
T J=-55°C
0
TC, Case Temperature (°C)
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4–6
APTM10DDAM09T3G – Rev 1
ID, Drain Current (A)
600
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
VGS=10V
ID= 69.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
25
50
75 100 125 150
Maximum Safe Operating Area
1.1
1.0
0.9
0.8
0.7
0.6
limited by
RDSon
100µs
100
1ms
Single pulse
TJ=150°C
TC=25°C
10
10ms
1
-50 -25
0
25 50 75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
Crss
1000
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=139A
T J=25°C
14
VDS=20V
12
VDS=50V
10
V DS =80V
8
6
4
2
0
0
100
200
300
400
500
Gate Charge (nC)
July, 2006
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
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5–6
APTM10DDAM09T3G – Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM10DDAM09T3G
APTM10DDAM09T3G
Delay Times vs Current
Rise and Fall times vs Current
160
120
t d(off)
80
VDS=66V
RG=5Ω
T J=125°C
L=100µH
60
40
120
td(on)
100
tr
60
40
20
0
0
0
50
100
150
200
I D, Drain Current (A)
250
0
50
100
150
200
ID, Drain Current (A)
250
Switching Energy vs Gate Resistance
Switching Energy vs Current
2.5
VDS=66V
RG=5Ω
TJ=125°C
L=100µH
1
Switching Energy (mJ)
1.5
Eoff
Eon
0.5
Eon
VDS=66V
ID=139A
T J=125°C
L=100µH
2
1.5
Eoff
1
Eon
0.5
0
0
0
50
100
150
200
250
0
10
I D, Drain Current (A)
Operating Frequency vs Drain Current
200
150
ZVS
100
ZCS
Hard
switching
50
0
25
50
75
100
125
30
40
50
60
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
VDS=66V
D=50%
RG=5Ω
T J=125°C
T C=75°C
250
20
Gate Resistance (Ohms)
300
Frequency (kHz)
tf
80
20
Eon and Eoff (mJ)
V DS=66V
R G=5Ω
T J=125°C
L=100µH
140
t r and tf (ns)
t d(on) and td(off) (ns)
100
1000
TJ=150°C
100
150
I D, Drain Current (A)
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM10DDAM09T3G – Rev 1
July, 2006
VSD, Source to Drain Voltage (V)
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