Linear IT120A Monolithic dual npn transistor Datasheet

IT120A IT120 IT121 IT122
MONOLITHIC DUAL
NPN
TRANSISTORS
Linear Integrated Systems
FEATURES
Direct Replacement for Intersil IT120 Series
Pin for Pin Compatible
C1
ABSOLUTE MAXIMUM RATINGS NOTE 1
E1
C2
(TA= 25°C unless otherwise noted)
IC
Collector Current
ONE SIDE
250mW
2.3mW/°C
E2
6 B2
1
C1
-65°C to +200°C
-55°C to +150°C
B1
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
5
B1 2
10mA
Maximum Temperatures
Storage Temperature Range
Operating Temperature Range
3
BOTH SIDES
500mW
4.3mW/°C
E1
E2
B2
BOTTOM VIEW
26 X 29 MILS
ELECTRICAL CHARACTERISTICS TA=25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS
IT120A IT120 IT121
BVCBO
Collector to Base Voltage
45
45
45
IT122
45
MIN.
7
C2
UNITS CONDITIONS
V
IC = 10µA IE = 0
BVCEO
Collector to Emitter Voltage
45
45
45
45
MIN.
V
IC = 10µA
IB = 0
BVEBO
Emitter-Base Breakdown Voltage
6.2
6.2
6.2
6.2
MIN.
V
IE = 10µA
IC = 0
BVCCO
Collector to Collector Voltage
60
60
60
60
MIN.
V
IC = 10µA
IE = 0
hFE
DC Current Gain
200
200
80
80
MIN.
IC = 10µA
VCE = 5V
225
225
100
100
MIN.
IC = 1.0mA VCE = 5V
NOTE 2
VCE(SAT) Collector Saturation Voltage
0.5
0.5
0.5
0.5
MAX.
V
IC = 0.5mA IB = 0.05mA
IEBO
Emitter Cutoff Current
1
1
1
1
MAX.
nA
IC = 0
ICBO
Collector Cutoff Current
1
1
1
1
MAX.
nA
IE = 0
VCB = 45V
COBO
Output Capacitance
2
2
2
2
MAX.
pF
IE = 0
VCB = 5V
CC1C2
Collector to Collector Capacitance
2
2
2
2
MAX.
pF
VCC = 0
IC1C2
Collector to Collector Leakage Current
10
10
10
10
MAX.
nA
VCC= ±60V
fT
Current Gain Bandwidth Product
220
220
180
180
MIN.
MHz
IC = 1mA
NF
Narrow Band Noise Figure
3
3
3
3
MAX.
dB
VEB = 3V
VCE = 5V
IC = 100µA VCE = 5V
BW = 200Hz, RG = 10 KΩ
f=1KHz
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
IT120A IT120
IT121
IT122
UNITS CONDITIONS
Base Emitter Voltage Differential
1
2
3
5
MAX. mV
IC = 10 µA
∆|(VBE1-VBE2)|/∆T Base Emitter Voltage Differential
3
5
10
20
MAX. µV/°C
IC = 10 µA
|VBE1-VBE2|
Change with Temperature
|IB1- IB2|
T = -55°C
Base Current Differential
2.5
TO-71
5
25
0.230
DIA.
0.209
0.030
MAX.
0.150
0.115
6 LEADS
MAX. nA
TO-78
0.500 MIN.
0.019 DIA.
0.016
0.305
0.335
MAX.
0.040 0.165
0.185
MIN. 0.500
0.016
0.021
DIM. B
+125°C
VCE = 5V
0.320 (8.13)
0.290 (7.37)
0.335
0.370
0.016
0.019
DIM. A
IC = 10 µA
VCE = 5V
to
P-DIP
Six Lead
0.195
DIA.
0.175
25
VCE = 5V
SEATING
PLANE
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.200
0.100
0.050
5
6
1
8
0.046
0.036
7
SOIC
2 3 4
1
5
8 7 6
2 3 4
45°
0.100
0.029
0.045
0.150 (3.81)
0.158 (4.01)
0.100
45°
0.048
0.028
0.188 (4.78)
0.197 (5.00)
0.028
0.034
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.228 (5.79)
0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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