ON NUP45V6P5 Low capacitance quad array for esd protection Datasheet

NUP45V6P5
Low Capacitance
Quad Array for
ESD Protection
This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended to be used in sensitive equipment such as wireless headsets,
PDAs, digital cameras, computers, printers, communication systems,
and other applications. The integrated design provides very effective
and reliable protection for four separate lines using only one package.
This device is ideal for situations where board space is at a premium.
Features
•
•
•
•
•
•
ESD Protection: IEC61000−4−2: Level 4
Four Separate Unidirectional Configurations for Protection
Low Leakage Current < 1 mA @ 3 V
Small SOT−953 SMT Package
Low Capacitance
These are Pb−Free Devices
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1
5
2
3
4
SOT−953
CASE 526AB
Benefits
•
•
•
•
Provides Protection for ESD Industry Standards: IEC 61000, HBM
Protects Four Lines Against Transient Voltage Conditions
Minimize Power Consumption of the System
Minimize PCB Board Space
MARKING DIAGRAM
5M
1
Typical Applications
•
•
•
•
Cellular and Portable Electronics
Serial and Parallel Ports
Microprocessor Based Equipment
Notebooks, Desktops, Servers
5 = Specific Device Code
M = Date & Assembly Code
ORDERING INFORMATION
Device
NUP45V6P5T5G
Package
Shipping†
SOT−953
(Pb−Free)
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 1
1
Publication Order Number:
NUP45V6P5/D
NUP45V6P5
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
Symbol
IF
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
QVBR
VC VBR VRWM
Working Peak Reverse Voltage
V
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IPP
Uni−Directional
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Thermal Resistance Junction−to−Ambient
Above 25°C, Derate
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
Symbol
Value
Unit
RqJA
560
4.5
°C/W
mW/°C
TJmax
150
°C
TJ Tstg
−55 to +150
°C
TL
260
°C
ESD
8000
400
V
Lead Solder Temperature (10 seconds duration)
Human Body Model (HBM)
Machine Model (MM)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Device
NUP45V6P5
Device
Marking
5
Typ Capacitance
@ 0 V Bias (pF)
(Note 1)
Typ Capacitance
@ 3 V Bias (pF)
(Note 1)
VC (V)
@ IPP = 1 A
(Note 2)
Breakdown Voltage
VBR @ 1 mA (Volts)
Leakage Current
IRM @ VRM
Min
Nom
Max
VRWM
IRWM (mA)
Typ
Max
Typ
Max
Max
5.3
5.6
5.9
3.0
1.0
13
17
7.0
11.5
10.5
1. Capacitance of one diode at f = 1 MHz, TA = 25°C.
2. Surge current waveform per Figure 3.
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NUP45V6P5
TYPICAL ELECTRICAL CHARACTERISTICS
14
0.030
TYPICAL CAPACITANCE (pF)
1 MHz FREQUENCY
IR, REVERSE LEAKAGE (mA)
0.035
0.025
0.020
0.015
0.010
0.005
0
−60 −40 −20
0
20
40
60
13
12
11
10
9
8
7
6
5
80 100 120 140 160
0
1
0.5
IF, FORWARD CURRENT (A)
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
0
0
20
40
4
60
0.001
80
TA = 25°C
0.6
0.8
1.0
1.2
1.4
t, TIME (ms)
Figure 3. 8 × 20 ms Pulse Waveform
Figure 4. Forward Voltage
110
100
90
80
70
60
50
40
30
20
0
5
0.01
VF, FORWARD VOLTAGE (V)
10
0
4.5
0.1
10
% OF RATED POWER OR IPP
% OF PEAK PULSE CURRENT
70
3.5
1
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
3
Figure 2. Capacitance
PEAK VALUE IRSM @ 8 ms
tr
90
2.5
BIAS VOLTAGE (V)
Figure 1. Reverse Leakage Current versus
Temperature
100
2
1.5
T, TEMPERATURE (°C)
25
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Power Derating Curve
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3
150
1.6
1.8
NUP45V6P5
PACKAGE DIMENSIONS
SOT−953
CASE 527AB−01
ISSUE O
A
−Y−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
−X−
5
4
1 2
3
HE
E
e
DIM
A
b
C
D
E
e
L
HE
C
b
5X
0.08 X Y
MILLIMETERS
MIN
NOM
MAX
0.44
0.48
0.50
0.10
0.15
0.20
0.05
0.10
0.15
0.95
1.00
1.05
0.75
0.80
0.85
0.35 BSC
0.05
0.10
0.15
0.95
1.00
1.05
INCHES
MIN
NOM
MAX
0.017 0.019 0.020
0.0039 0.0059 0.0079
0.002 0.004 0.006
0.037 0.039 0.041
0.03 0.032 0.034
0.014 BSC
0.0019 0.0039 0.0059
0.037 0.039 0.041
SOLDERING FOOTPRINT*
0.35
0.014
0.35
0.014
0.90
0.0354
0.20
0.08
0.20
0.08
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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NUP45V6P5/D
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