DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS signed for high voltage switching applications. (in millimeters) 4.5 ±0.2 10.0 ±0.3 FEATURES 3.2 ±0.2 2.7 ±0.2 • Low On-Resistance Drain to Source Voltage VDSS –250 V Gate to Source Voltage VGSS m30 V Drain Current (DC) ID(DC) m6.0 A Drain Current (pulse)* ID(pulse) m24 A 35 W Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W Channel Temperature 150 ˚C Total Power Dissipation (Tc = 25 ˚C) PT1 Tch Storage Temperature Tstg Single Avalanche Current** IAS –6.0 A Single Avalanche Energy** EAS 180 mJ * 4 ±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 0.7 ±0.1 13.5 MIN. 3 ±0.1 15.0 ±0.3 • Low Ciss Ciss = 1040 pF TYP. • High Avalanche Capability Ratings • Isolated TO-220 Package 12.0 ±0.2 RDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A) 2.5 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 2.54 0.65 ±0.1 1. Gate 2. Drain 3. Source –55 to +150 ˚C PW ≤ 10 µs, Duty Cycle ≤ 1 % 1 2 3 MP-45F(ISOLATED TO-220) ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0 Drain Body Diode Gate Source Document No. D10030EJ1V0DS00 Date Published May 1995 P Printed in Japan © 1995 2SJ449 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT 0.55 0.8 Ω VGS = –10 V, ID = –3.0 A –5.5 V VDS = –10 V, ID = –1 mA S VDS = –10 V, ID = –3.0 A VDS = –250 V, VGS = 0 Drain to Source On-Resistance RDS(on) Gate to Source Cutoff Voltage VGS(off) –4.0 –4.8 Forward Transfer Admittance | yfs | 2.0 3.5 TEST CONDITIONS Drain Leakage Current IDSS –100 µA Gate to Source Leakage Current IGSS m100 nA VGS = m30 V, VDS = 0 Input Capacitance Ciss 1040 pF VDS = –10 V Output Capacitance Coss 360 pF VGS = 0 Reverse Transfer Capacitance Crss 70 pF f = 1 MHz Turn-On Delay Time td(on) 24 ns ID = –3.0 A Rise Time tr 16 ns VGS(on) = –10 V Turn-Off Delay Time td(off) 47 ns VDD = –125 V Fall Time tf 14 ns RG = 10 Ω, RL = 42 Ω Total Gate Charge QG 23.1 nC ID = –6.0 A Gate to Source Charge QGS 7.1 nC VDD = –200 V Gate to Drain Charge QGD 12.9 nC VGS = –10 V Body Diode Forward Voltage VF(S-D) 0.92 V IF = –6.0 A, VGS = 0 Reverse Recovery Time trr 155 ns IF = –6.0 A, VGS = 0 Reverse Recovery Charge Qrr 930 nC di/dt = 50 A/µs Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time D.U.T. D.U.T. RG = 25 Ω PG RL L 50 Ω RG RG = 10 Ω PG. VDD VDD VGS VGS Wave 010 % Form IAS ID ID Wave Form VGS 0 BVDSS VDS VDD t t = 1µs Duty Cycle ≤ 1 % 90 % 90 % ID VGS = –20 → 0 V VGS (on) 90 % ID 10 % 0 10 % td (on) tr ton td (off) tf toff Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = –2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SJ449 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 35 100 80 60 40 20 0 20 40 60 80 30 25 20 15 10 5 0 100 120 140 160 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –100 DS R VG (at = 10 0 ID(DC) Po –20 1 er Di s m s 0 DC ms ss ipa tio n TC = 25 ˚C –0.1 Single Pulse –1.0 –10 s m 10 10 w –1.0 ID - Drain Current - A –10 d ite V) Lim–20 = S ) (on PW µ ID - Drain Current - A Pulsed ID(pulse) Lim –16 VGS= –20 V –10 V –12 –8 –4 ite d –100 –1000 VDS - Drain to Source Voltage - V 0 –5 –10 –15 –20 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A –100 Pulsed –10 –1.0 TA= –25 ˚C 25 ˚C 75 ˚C 125 ˚C –0.1 0 VDS = –10 V –5 –10 –15 VGS - Gate to Source Voltage - V 3 2SJ449 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 62.5 ˚C/W 100 10 Rth(ch-c) = 3.57 ˚C/W 1 0.1 0.01 Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 10 VDS = –10 V Pulsed TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1.0 0.1 –0.1 –1.0 –10 –100 RDS(on) - Drain to Source On-State Resistance - Ω PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 Pulsed ID = –6 A –3 A –1.2 A 1.0 0.5 0 –5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 1.5 1.0 VGS = –10 V –20 V 0.5 0 –1.0 –10 ID - Drain Current - A 4 –15 VGS - Gate to Source Voltage - V –100 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω ID - Drain Current - A –10 VDS = –10 V ID = –1 mA –8.0 –6.0 –4.0 –2.0 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 2.0 ISD - Diode Forward Current - A 1.5 1.0 VGS = –10 V 0.5 100 10 VGS = 0 V 10 V 1 0.1 ID = –3 A 0 –50 0 50 100 0 150 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz Ciss 1 000 Coss 100 Crss 10 –1.0 –10 –100 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10 000 –1 000 tr 100 td(off) 10 1.0 –0.1 10 ID - Drain Current - A 100 –20 -400 ID = –6 A VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns 100 10 –1.0 DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 50 A/µs VGS = 0 1.0 VDD = –125 V VGS = –10 V RG = 10 Ω –10 –100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1.0 0.1 tf td(on) VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 VSD - Source to Drain Voltage - V -300 VDD = –200 V –125 V –50 V –15 -200 –10 -100 –5 0 0 10 20 30 40 Qg - Gate Charge - nC 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω 2SJ449 2SJ449 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR –10 160 ID = –6 A EAS =1 80 mJ –1.0 VDD = –125 V VGS = –20 V → 0 RG = 25 Ω –0.1 100 µ 1m VDD = –125 V RG = 25 Ω VGS = –20 V → 0 IAS < = –6 A 140 120 100 80 60 40 20 10 m L - Inductive Load - H 6 Energy Derating Factor - % IAS - Single Avalanche Current - A –100 100 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C 2SJ449 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SJ449 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8