Sanyo EC4H09C Npn epitaxial planar silicon transistor uhf to x band low-noise amplifier and osc application Datasheet

EC4H09C
Ordering number : ENA1267
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
EC4H09C
UHF to X Band Low-Noise Amplifier
and OSC Applications
Features
•
•
•
•
High cut-off frequency : fT=26GHz typ (VCE=3V).
Low operating voltage.
High gain : ⏐S21e⏐2=16.5dB typ (f=2GHz).
Halogen free compliance (UL94 HB).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to- Base Voltage
VCBO
10
Collector-to-Emitter Voltage
VCEO
3.5
V
Emitter-to-Base Voltage
VEBO
2.5
V
40
mA
120
mW
Junction Temperature
IC
PC
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Collector Current
Collector Dissipation
V
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
Conditions
Ratings
min
typ
VCB=5V, IE=0A
VEB=1V, IC=0A
Gain-Bandwidth Product
hFE
fT
VCE=1V, IC=5mA
VCE=3V, IC=20mA
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
70
20
Unit
max
1
μA
1
μA
150
26
0.12
GHz
pF
Marking : M
Continued on next page.
Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
80608AB TI IM TC-00001513 No. A1267-1/3
EC4H09C
Continued from preceding page.
Parameter
Symbol
2
⏐S21e⏐ 1
2
⏐S21e⏐ 2
NF
Forward Transfer Gain
Noise Figure
Ratings
Conditions
min
typ
VCE=1V, IC=10mA, f=2GHz
15
VCE=3V, IC=20mA, f=2GHz
13
dB
16.5
VCE=1V, IC=5mA, f=2GHz
Package Dimensions
Unit
max
dB
1.3
1.8
dB
Electrical Connection (Top view)
unit : mm (typ)
7036-002
Polarity mark (Top)
Top View
Emitter
Base
0.8
3
1
2
Emitter
1.0
4
Collector
*Electrodes : Bottom
Polarity mark (Top)
Polarity Discriminating Mark
0.6
Emitter
Collector
Base
Emitter
0.5
0.3
0.2
3
SANYO : ECSP1008-4
Bottom View
IC -- VCE
120μA
12
90μA
9
60μA
6
30μA
3
IB=0μA
0
0
1
2
12
9
6
3
0
3
Collector-to-Emitter Voltage, VCE -- V
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
IT13887
hFE -- IC
3
IC -- VBE
15
150μA
Collector Current, IC -- mA
Collector Current, IC -- mA
15
3V
4
1 : Base
2 : Emitter
3 : Collector
4 : Emitter
VCE=1V
2
0.6
1
1.2
IT13888
Cre -- VCB
3
Reverse Transfer Capacitance, Cre -- pF
f=1MHz
DC Current Gain, hFE
2
VCE=3V
100
1V
7
5
3
1.0
2
3
5
7
10
2
Collector Current, IC -- mA
3
5
7
IT13889
2
0.1
7
5
3
0.1
2
3
5
7
1.0
2
3
5
Collector-to-Base Voltage, VCB -- V
7 10
IT13899
No. A1267-2/3
EC4H09C
⏐S21e⏐2 -- IC
20
f T -- IC
7
f=2GHz
Gain-Bandwidth Product, f T -- GHz
18
V
=3
V CE
16
1V
14
12
10
8
6
1.0
2
3
5
7
2
10
Collector Current, IC -- mA
5
3
=3V
VCE
2
1V
10
7
2
3
5
2.0
1.5
1.0
0.5
10
2
3
5
7
IT13892
PC -- Ta
140
2.5
7
Collector Current, IC -- mA
IT13891
VCE=1V
f=2GHz
ZS=Zsopt
0
1.0
5
5
1.0
7
NF -- IC
3.0
Noise Figure, NF -- dB
3
Collector Dissipation, PC -- mW
2
Forward Transfer Gain, ⏐S21e⏐ -- dB
f=2GHz
120
100
80
60
40
20
0
2
3
5
7
10
Collector Current, IC -- mA
2
3
IT13900
0
25
50
75
100
125
150
Ambient Temperature, Ta -- °C
175
IT13894
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of August, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1267-3/3
Similar pages