CHA2080-98F 71-86GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2080-98F is a Low Noise Amplifier with variable gain. This circuit integrates four stages and provides 3.5dB Noise Figure associated to 22dB Gain and +10dBm Output Power at 1dB compression. This amplifier is dedicated to telecommunication, particularly well suited for the two main E-Bands used in new generation of High Capacity Backhaul. It is manufactured with a pHEMT process, 0.1µm gate length, via holes through the substrate, air bridges, electron beam gate lithography and is available in chip form with BCB Layer protection. Functional diagram Main Features 28 24 Associated Gain & NF (dB) ■ Broadband performances: 71-86GHz ■ Very low Noise Figure: 3.5dB ■ High Gain: 22dB ■ Dynamic Gain control: 12dB ■ 10dBm Pout@1dB compression ■ BCB Layer protection ■ DC bias: Vd=3.5Volt@Id=75mA ■ Chip size 3.35x1.12x0.07mm 20 16 12 8 4 0 65 70 75 80 85 90 Frequency (GHz) Typical Linear gain and Noise Figure Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB compression Ref. : DSCHA20802355 - 20 Dec 12 1/12 Min 71 Typ Max 86 22 3.5 10 Unit GHz dB dB dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2080-98F 71-86GHz Low Noise Amplifier Electrical Characteristics Tamb.=+25°C, Vd=+3.5V, Id=75mA Symbol Parameter Fop Frequency range Gain* Linear Gain ∆Gain(Fop) Gain variation: Low Band [71-76 GHz] High Band [81-86 GHz] Dyn_Gain Gain Dynamic with VGx [-3; -2V] NF* Noise Figure@ nominal gain Low Band [71-76 GHz] High Band [81-86 GHz] Pout@1dB Output power at 1 dB compression comp.* Low Band [71-76 GHz] High Band [81-86 GHz] VSWR_in* VSWR at input port VSWR_out* VSWR at output port VG12 & VG34 Negative supply voltage Ig Negative supply current Id Positive supply current Min 71 Typ Max 86 22 Unit GHz dB ±0.2 ±0.8 12 dB dB dB 4 3.5 dB dB 12 10 2:1 2:1 -2 0.6 75 dBm dBm V mA mA *Nominal conditions: VG12=VG34 are tuned to obtain Id=75mA (#-2V) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. A ribbon (75 µm wide) connection at the input and the output of the MMIC amplifier (see chapter recommended chip assembly) could improve the results. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4 V Id Drain bias current 95 mA Vg Gate bias voltage -3 to +0.4 V (2) Pin Maximum peak input power overdrive +0 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA20802355 - 20 Dec 12 2/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2080-98F 71-86GHz Low Noise Amplifier Typical on-wafer Sij parameters Tamb.=+25°C, Vd=+3.5V, Id=75mA Freq S11 PhS11 S12 (GHz) (dB) (°) (dB) 68 -3.3 9 -39.7 68.5 -4.3 -5 -45.9 69 -5.4 -21 -45 69.5 -6.8 -36 -47.7 70 -8.1 -51 -42.8 70.5 -9.3 -66 -42.3 71 -10.4 -82 -44.5 71.5 -11.6 -98 -43.8 72 -12.7 -115 -44.5 72.5 -14.5 -135 -44.7 73 -14.9 -151 -46.4 73.5 -15.7 -158 -48.5 74 -16.5 -164 -47.7 74.5 -17.3 -175 -50.5 75 -16.5 172 -53.6 75.5 -17 160 -52.2 76 -17 151 -54.4 76.5 -17.2 139 -56.9 77 -17.6 123 -53.5 77.5 -19.4 107 -51.8 78 -20.6 87 -50.1 78.5 -24.8 55 -48.8 79 -30.8 16 -49.4 79.5 -29.3 -56 -50.1 80 -28.6 -109 -50.8 80.5 -24.2 -130 -49.7 81 -21.4 -154 -50.2 81.5 -19.6 -172 -53.8 82 -18.1 173 -53.2 82.5 -17 156 -64.1 83 -15.7 139 -59.5 83.5 -14.3 122 -61.6 84 -12.8 101 -59.4 84.5 -11.3 82 -60.9 85 -10 60 -53.3 85.5 -8.8 42 -51.4 86 -7.7 24 -51 86.5 -6.6 7 -51.5 87 -5.7 -9 -50.9 87.5 -4.9 -24 -50.8 88 -4.3 -40 -50 88.5 -4 -54 -51.2 89 -3.9 -67 -51.7 Ref. : DSCHA20802355 - 20 Dec 12 PhS12 (°) 152 160 159 166 160 144 132 119 123 111 98 95 66 53 2 1 -34 -65 -86 -101 -131 -158 -174 165 145 143 113 88 70 43 88 85 29 15 -39 -73 -108 -130 -148 -165 171 137 110 3/12 S21 (dB) 19.5 19.9 20.8 21.2 21.5 21.7 21.8 21.7 21.6 21.6 21.5 21.3 21.3 21.5 21.4 21.5 21.5 21.6 21.7 21.7 21.9 22.1 22.1 22.1 22 21.8 21.5 21.3 21.2 21 20.9 20.9 20.8 20.5 20.5 20.4 19.9 19.9 19.6 18.6 17 14.2 10.8 PhS21 (°) 106 86 63 42 21 0 -19 -39 -58 -77 -97 -115 -131 -146 -164 180 163 146 128 110 91 74 55 34 15 -3 -22 -40 -58 -78 -96 -115 -136 -157 -180 159 136 109 84 51 18 -12 -41 S22 (dB) -10.3 -9.6 -8.7 -9.8 -11.6 -12.8 -12.8 -11.3 -10.4 -11 -12.4 -13 -13.3 -12.8 -12.9 -14.5 -14.9 -15.3 -15.3 -15.5 -15.7 -15.7 -15 -15.2 -16 -15.8 -15.4 -15.1 -15 -15.4 -15.4 -15.2 -14.5 -13.7 -14.6 -15 -15.6 -16.8 -17 -16.7 -15.2 -13.9 -12.7 PhS22 (°) 73 58 59 63 62 57 52 47 45 44 33 20 10 4 -4 -13 -32 -48 -57 -71 -94 -117 -139 -160 -177 164 146 131 118 102 86 72 60 41 30 18 0 -8 -1 1 2 -7 -18 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2080-98F 71-86GHz Low Noise Amplifier Typical on wafer Measurements Tamb.=+25°C, Vd =+3.5V, Id=75mA Linear Gain & return losses versus frequency 30 25 Gain & Return Losses (dB) 20 15 10 S11 S21 S22 5 0 -5 -10 -15 -20 -25 -30 65 70 75 80 85 90 Frequency (GHz) Linear Gain versus Vg voltage 30 25 Gain (dB) 20 15 10 5 -2V -2.4V -2.6V -2.8V -3V 0 -5 65 70 75 80 85 90 Frequency (GHz) Ref. : DSCHA20802355 - 20 Dec 12 4/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2080-98F 71-86GHz Low Noise Amplifier Typical on wafer Measurements Tamb.=+25°C, Vd=+3.5V, Id=75mA Input Return loss versus vg voltage Output Return loss versus vg Voltage 0 0 -2.4V -2.6V -2.8V -3V -5 -5 -10 -10 S22 (dB) S11 (dB) -2V -15 -20 -25 -2V -2.4V -2.6V -2.8V -3V -15 -20 -25 -30 -30 65 70 75 80 Frequency (GHz) 85 90 65 70 75 80 Frequency (GHz) 85 90 Noise Figure versus Vg voltage 10 -2V -2.4V -2.6V -2.8V -3V 9 Noise Figure (dB) 8 7 6 5 4 3 2 1 0 65 70 75 80 85 90 Frequency (GHz) Ref. : DSCHA20802355 - 20 Dec 12 5/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2080-98F 71-86GHz Low Noise Amplifier Typical on wafer Measurements Tamb.=+25°C, Vd=+3.5V, Id=75mA Output power at 1 dB compression versus Vg voltage 15 -2V -2.4V -2.6V -2.8V -3V 13 Pout at 1dB comp. (dBm) 11 9 7 5 3 1 -1 -3 -5 69 74 79 84 89 Frequency (GHz) Input power at 1 dB compression versus Vg voltage 0 -2V -2 -2.4V -2.6V -2.8V -3V Pin at 1dB comp. (dBm) -4 -6 -8 -10 -12 -14 -16 -18 -20 69 74 79 84 89 Frequency (GHz) Ref. : DSCHA20802355 - 20 Dec 12 6/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2080-98F 71-86GHz Low Noise Amplifier Typical Test Fixture Measurements Tamb.=-40°C / +25°C / +85°C, Vd=+3.5V Id=75 mA @ +25°C Measurements are given in the test fixture access plans Linear Gain versus Temperature 30 28 26 24 22 Linear Gain (dB) 20 18 16 14 12 -40°C 10 25°C 85°C 8 6 4 2 0 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Frequency (GHz) Output Return Loss versus Temperature 0 0 -5 -5 Output Return Loss (dB) Input Return Loss (dB) Input Return Loss versus Temperature -10 -15 -20 -25 -30 -40°C 25°C 85°C -35 -10 -15 -20 -25 -40°C 25°C 85°C -30 -35 -40 -40 71 72 73 74 75 76 77 78 79 80 Frequency (GHz) Ref. : DSCHA20802355 - 20 Dec 12 81 82 83 84 85 86 71 7/12 72 73 74 75 76 77 78 79 80 Frequency (GHz) 81 82 83 84 85 86 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2080-98F 71-86GHz Low Noise Amplifier Mechanical data Chip thickness: 70µm. ±10µm Chip size: 3350x1120 ±35µm All dimensions are in micrometers RF Pads (4,7) DC Pads = 108 x 106 = 86 x 83 Pin number Pin name 0, 3, 5 GND 4 OUT 7 IN 6 VD 1 VG12 2 VG34 Ref. : DSCHA20802355 - 20 Dec 12 (BCB opening) (BCB opening) Description Ground: should not be bonded RF output port RF input port Positive supply voltage Negative supply voltage for the first & second stage Negative supply voltage for the third and fourth stage 8/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2080-98F 71-86GHz Low Noise Amplifier Recommended chip assembly 10nF 75µm 160µm 120pF Ribbon Gap 120pF 120pF 10nF To VG Power supply The design of the circuit integrates a half ribbon (75µm wide) connection at the input and the output of the MMIC amplifier compliant with a 50 Ohm line on GaAs MMIC. Circuits having to be as close as possible to each other, the ribbon length must be reduced to the achievable minimum (160µm gap between two chips is considered) and the loop height must also be the smallest realizable (80µm). Ribbon(W75µm,length≈330µm ) Hyper access Hyper access MMIC CHA2080 160µm 85µm A second solution is the use of double wires (Ø 25µm). In this case, a minimum of two wires and the same chip to chip distance than ribbon solution are necessary to reduce the inductance effect. Nevertheless, simulations have demonstrated an improvement of RF performance for E-band frequency range with the use of ribbon connection instead of wire. Regarding the connection of the DC pads, a 25µm wedge bonding is preferred. Ref. : DSCHA20802355 - 20 Dec 12 9/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2080-98F 71-86GHz Low Noise Amplifier DC Schematic LNA: 3.5V, 75mA Ref. : DSCHA20802355 - 20 Dec 12 10/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2080-98F 71-86GHz Low Noise Amplifier Notes Ref. : DSCHA20802355 - 20 Dec 12 11/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2080-98F 71-86GHz Low Noise Amplifier Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Ordering Information Chip form: CHA2080-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20802355 - 20 Dec 12 12/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34