ON MURS110T3 Surface mount ultrafast power rectifier Datasheet

MURS120T3 Series
Preferred Devices
Surface Mount Ultrafast
Power Rectifiers
MURS105T3, MURS110T3, MURS115T3,
MURS120T3, MURS140T3, MURS160T3
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Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
Features
•
•
•
•
•
ULTRAFAST RECTIFIERS
1.0 AMPERE
50−600 VOLTS
Pb−Free Packages are Available
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A,
TJ = 150°C)
SMB
CASE 403A
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
MARKING DIAGRAM
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
AYW
U1x
U1
x
A
Y
W
= Device Code
= A, B, C, D, G or J
= Assembley Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 7
1
Publication Order Number:
MURS120T3/D
MURS120T3 Series
MAXIMUM RATINGS
MURS
Symbol
105T3
110T3
115T3
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
150
Average Rectified Forward Current
IF(AV)
1.0 @ TL = 155°C
2.0 @ TL = 145°C
1.0 @ TL = 150°C
2.0 @ TL = 125°C
A
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
IFSM
40
35
A
Rating
Operating Junction Temperature
120T3
140T3
160T3
Unit
200
400
600
V
°C
65 to +175
TJ
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead
(TL = 25°C)
RJL
°C/W
13
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)
vF
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ = 25°C)
(Rated DC Voltage, TJ = 150°C)
iR
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/s)
(iF = 0.5 A, iR = 1.0 A, IR to 0.25 A)
trr
Maximum Forward Recovery Time
(iF = 1.0 A, di/dt = 100 A/s, Rec. to 1.0 V)
tfr
V
0.875
0.71
1.25
1.05
2.0
50
5.0
150
35
25
75
50
25
50
A
ns
ns
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
DEVICE MARKING AND ORDERING INFORMATION
Marking
Package
Shipping†
MURS105T3
U1A
SMB
2500 Units/Tape & Reel
MURS110T3
U1B
SMB
2500 Units/Tape & Reel
MURS115T3
U1C
SMB
2500 Units/Tape & Reel
MURS120T3
U1D
SMB
2500 Units/Tape & Reel
MURS120T3G
U1D
SMB
(Pb−Free)
2500 Units/Tape & Reel
MURS140T3
U1G
SMB
2500 Units/Tape & Reel
MURS140T3G
U1G
SMB
(Pb−Free)
2500 Units/Tape & Reel
MURS160T3
U1J
SMB
2500 Units/Tape & Reel
MURS160T3G
U1J
SMB
(Pb−Free)
2500 Units/Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MURS120T3 Series
MURS105T3, MURS110T3, MURS115T3, MURS120T3
10
IR, REVERSE CURRENT ( A)
7.0
5.0
3.0
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
175°C
100°C
2.0
TC = 25°C
1.0
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
TJ = 175°C
TJ = 100°C
0.08
0.04
0.02
0.008
0.004
0.002
0.7
TJ = 25°C
0
20
40
0.5
60
80
100
120
140
160
180 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
0.3
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied VR is sufficiently
below rated VR.
0.2
50
0.1
45
0.07
NOTE: TYPICAL
CAPACITANCE AT
0 V = 45 pF
C, CAPACITANCE (pF)
40
0.05
0.03
0.02
35
30
25
20
15
10
0.01
5.0
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
10
20
30
40
50
60
70
80
90
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
10
RATED VOLTAGE APPLIED
RJC = 13°C/W
TJ = 175°C
9.0
8.0
7.0
6.0
5.0
4.0
DC
3.0
2.0
SQUARE WAVE
1.0
0
80
90
100
110
120
130
140
150
160
170
180
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Capacitance
5.0
TJ = 175°C
4.0
5.0
I
(CAPACITANCELOAD) PK 20
I
3.0
10
AV
2.0
DC
SQUARE WAVE
1.0
0
0
0.5
1.0
1.5
2.0
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, Case
Figure 5. Power Dissipation
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3
2.5
MURS120T3 Series
MURS140T3, MURS160T3
10
IR, REVERSE CURRENT ( A)
7.0
175°C
5.0
100°C
3.0
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
TC = 25°C
2.0
1.0
0.7
400
200
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
0.08
0.04
0.02
0.008
0.004
TJ = 175°C
TJ = 100°C
TJ = 25°C
0
100
200
0.5
300
400
500
600
700
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Reverse Current*
0.3
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied VR is sufficiently
below rated VR.
0.2
25
0.1
0.07
NOTE: TYPICAL
CAPACITANCE AT
0 V = 24 pF
C, CAPACITANCE (pF)
20
0.05
0.03
0.02
15
10
5.0
0.01
0.3 0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
0
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
4.0
8.0
12
16
20
24
28
32
36
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Forward Voltage
10
RATED VOLTAGE APPLIED
RJC = 13°C/W
TJ = 175°C
9.0
8.0
7.0
6.0
5.0
4.0
DC
3.0
2.0
SQUARE WAVE
1.0
0
0
20
40
60
80
100
120
140
160
180
200
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
Figure 8. Typical Capacitance
5.0
4.0
5.0
10
(CAPACITANCE LOAD)
I
PK 20
I
SQUARE WAVE
AV
3.0
DC
TJ = 175°C
2.0
1.0
0
0
0.5
1.0
1.5
2.0
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Current Derating, Case
Figure 10. Power Dissipation
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4
2.5
MURS120T3 Series
PACKAGE DIMENSIONS
SMB
DO−214AA
CASE 403A−03
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
S
A
D
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
B
C
K
P
H
J
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
MURS120T3 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MURS120T3/D
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