DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072g (approximate) SO-8 S D S D S D G D TOP VIEW Internal Schematic TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Units V V IDM Value 30 ±25 9 6.75 40 Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Symbol PD RθJA Value 2.5 50 Unit W °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Symbol VDSS VGSS Steady State TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 3) A A Thermal Characteristics Notes: 1. 2. 3. 4. Device mounted on 2 oz copper pad layout with RθJA = 50°C/W. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN3030LSS Document number: DS31261 Rev. 10 - 2 1 of 6 www.diodes.com July 2009 © Diodes Incorporated DMN3030LSS Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 ±1 V μA nA μA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS = ±25V, VDS = 0V 2.1 18 30 V ⎯ 1.2 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 2.1A pF pF pF Ω IGSS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1 Static Drain-Source On-Resistance RDS (ON) ⎯ Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS gfs VSD ⎯ 0.5 ⎯ 15.7 26.4 5.8 0.7 Ciss Coss Crss RG ⎯ ⎯ ⎯ 0.30 741 124 95 0.88 ⎯ ⎯ ⎯ 1.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 7.6 16.7 1.9 5.2 4.0 4.4 23.0 9.4 12 25 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Qg Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Qgs Qgd td(on) tr td(off) tf mΩ Test Condition VDS = 15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 15V, VGS = 4.5V, ID = 9A nC ns VDS = 15V, VGS = 10V, ID = 9A VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω 5. Short duration pulse test used to minimize self-heating effect. 16 18 14 VGS = 10V VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 15 12 9 6 12 VDS = 5V 10 8 6 4 VGS = 3.0V 3 2 VGS = 2.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN3030LSS Document number: DS31261 Rev. 10 - 2 5 2 of 6 www.diodes.com 0 1.5 2 2.5 3 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3.5 July 2009 © Diodes Incorporated 0.03 VGS = 4.5V 0.02 VGS = 10V 0.01 0 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 150°C 0.04 TA = 125°C TA = 85°C 0.03 TA = 25°C 0.02 TA = -55°C 0.01 0 100 3 6 9 12 ID, DRAIN-SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 15 1.6 0.03 1.5 VGS = 10V 0.025 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C 0.015 3 6 9 12 ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature VGS = 10V ID = 10A 1.3 1.2 VGS = 4.5V ID = 5A 1.1 1.0 0.9 0.7 -50 0.01 0 1.4 0.8 TA = -55°C 0 50 100 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 15 2.5 10,000 2.2 ID = 250µA C, CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) VGS = 4.5V 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.1 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMN3030LSS 1.9 1.6 1,000 100 1.3 1 -50 10 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN3030LSS Document number: DS31261 Rev. 10 - 2 3 of 6 www.diodes.com 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Total Capacitance 30 July 2009 © Diodes Incorporated DMN3030LSS 100 IS, SOURCE CURRENT (A) 10 1 VGS = 150°C 0.1 VGS = 125°C VGS = 85°C 0.01 VGS = 25°C VGS = -55°C 0.001 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 1 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 90°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 10 Transient Thermal Response Ordering Information (Note 6) Part Number DMN3030LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View 8 5 Logo N3030LS Part no. YY WW 1 DMN3030LSS Document number: DS31261 Rev. 10 - 2 4 4 of 6 www.diodes.com Xth week: 01~52 Year : "07" =2007 "08" =2008 July 2009 © Diodes Incorporated DMN3030LSS 0.254 Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN3030LSS Document number: DS31261 Rev. 10 - 2 5 of 6 www.diodes.com July 2009 © Diodes Incorporated DMN3030LSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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