DIODES SBM835L-13

SBM835L
8A LOW VF SCHOTTKY BARRIER RECTIFIER
POWERMITEÒ3
UNDER DEVELOPMENT
NEW PRODUCT
Features
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Forward Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
G
P
3
1
Case: POWERMITEâ3 Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Type Number, See also Sheet 2
Weight: 0.072 grams (approx.)
H
Max
A
4.03
4.09
B
6.40
6.61
D
G
2
M
D
K
C
C
PIN 1
Pins 1 & 2 must be electrically
connected at the printed circuit board.
1.83 NOM
1.10
1.14
.178 NOM
5.01
5.17
J
4.37
4.43
L
PIN 3, BOTTOMSIDE
HEAT SINK
.889 NOM
H
K
L
PIN 2
Note:
Maximum Ratings
Min
E
Mechanical Data
·
·
·
Dim
C
J
B
·
·
POWERMITEâ3
E
A
.178 NOM
.71
.77
M
.36
.46
P
1.73
1.83
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
Value
Unit
VRRM
VRWM
VR
35
V
VR(RMS)
25
V
IO
8
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
@ TC = 88°C
IFSM
75
A
Typical Thermal Resistance Junction to Case
RqJC
0.9
°C/W
Typical Thermal Resistance Junction to Soldering Point
RqJS
3.2
°C/W
Tj
-65 to +125
°C
TSTG
-65 to +150
°C
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TS = 88°C
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)R
35
¾
¾
V
IR = 1mA
Forward Voltage (Note 1)
VFM
¾
¾
0.47
0.38
0.51
0.41
V
IF = 8A, TS = 25°C
IF = 8A, TS = 125°C
Peak Reverse Current (Note 1)
IRM
¾
¾
0.07
7.5
1.4
35
mA
Characteristic
Reverse Breakdown Voltage (Note 1)
Notes:
Test Condition
TS = 25°C, VR = 35V
TS = 100°C, VR = 35V
1. Short duration test pulse used to minimize self-heating effect.
DS30225 Rev. 1 - 1
1 of 2
SBM835L
IR, INSTANTANEOUS REVERSE CURRENT (mA)
IF, INSTANTANEOUS FORWARD CURRENT (A)
10
Tj = 125ºC
Tj = 25ºC
1
Tj = 75ºC
0.1
0.01
0.001
0.0001
0
100
200
300
400
500
600
700
100
TJ = 125ºC
10
TJ = 75ºC
0.1
TJ = 25ºC
0.01
0.001
0
5
10
15
20
30
25
35
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
100
10,000
Single Half-Sine-Wave
(JEDEC Method)
f = 1MHz
CJ, JUNCTION CAPACITANCE (pF)
80
TJ = 100ºC
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
IFSM, PEAK FORWARD SURGE CURRENT (A)
NEW PRODUCT
100
TC = 88°C
60
40
20
1000
100
0
1
10
0
100
Notes:
10
15
20
25
30
35
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance vs. Reverse Voltage
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Ordering Information
5
(Note 2)
Device
Packaging
Shipping
SBM835L-13
POWERMITEâ3
5000/Tape & Reel
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
SBM835L
YYWW
SBM835L = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
UNDER DEVELOPMENT
POWERMITE is a registered trademark of Microsemi Corporation.
DS30225 Rev. 1 - 1
2 of 2
SBM835L