ON NSS1C201L 100 v, 3.0 a, low vce(sat) transistor Datasheet

NSS1C201L, NSV1C201L
100 V, 3.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
www.onsemi.com
100 VOLTS, 3.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
COLLECTOR
3
1
BASE
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
3
MAXIMUM RATINGS (TA = 25°C)
1
Symbol
Max
Unit
2
Collector-Emitter Voltage
VCEO
100
Vdc
Collector-Base Voltage
VCBO
140
Vdc
SOT−23 (TO−236)
CASE 318
STYLE 6
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
2.0
A
ICM
3.0
A
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
490
mW
3.7
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
255
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
710
mW
4.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
176
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Rating
Collector Current − Continuous
Collector Current − Peak
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 5
1
VT MG
G
1
VT = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSS1C201LT1G,
NSV1C201LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C201L/D
NSS1C201L, NSV1C201L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Vdc
100
Vdc
140
Vdc
7.0
Collector Cutoff Current
(VCB = 140 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
nAdc
100
nAdc
50
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
150
120
80
40
Collector −Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.01 A)
(IC = 0.5 A, IB = 0.05 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.100 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
240
360
V
0.030
0.060
0.090
0.150
V
0.950
V
0.850
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
MHz
110
Input Capacitance (VEB = 2.0 V, f = 1.0 MHz)
Cibo
230
pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
14
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
PD, POWER DERATING (W)
0.8
0.7
Note 2
0.6
0.5
0.4
Note 1
0.3
0.2
0.1
0
0
20
40
60
80
100
120
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
www.onsemi.com
2
140
NSS1C201L, NSV1C201L
TYPICAL CHARACTERISTICS
400
400
VCE = 2 V
150°C
300
25°C
250
200
150
−55°C
100
25°C
250
200
150
−55°C
100
0
0
0.01
0.1
1
0.001
10
1
Figure 2. DC Current Gain
Figure 3. DC Current Gain
IC/IB = 10
150°C
25°C
0.1
−55°C
0.01
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC/IB = 20
150°C
25°C
0.1
−55°C
0.01
0.001
VBE(sat), BASE−EMITTER SATURATION (V)
IC/IB = 10
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.01
0.1
1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
1.2
1.0
10
1
Figure 4. Collector−Emitter Saturation Voltage
0.001
0.1
IC, COLLECTOR CURRENT (A)
1
0.001
0.01
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR−EMITTER SATURATION (V)
0.001
VCE(sat), COLLECTOR−EMITTER
SATURATION (V)
300
50
50
VBE(sat), BASE−EMITTER SATURATION (V)
VCE = 4 V
150°C
350
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
350
10
1.2
IC/IB = 50
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
Figure 7. Base−Emitter Saturation Voltage
www.onsemi.com
3
10
NSS1C201L, NSV1C201L
1.2
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
VCE = 2 V
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.01
0.1
1
IC = 0.1 A
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IB, BASE CURRENT (A)
Figure 8. Base Emitter Voltage
Figure 9. Collector Saturation Region
50
COB, OUTPUT CAPACITANCE (pF)
CIB, INPUT CAPACITANCE (pF)
0.5 A
0.1
10
400
TJ = 25°C
fTEST = 1 MHz
350
300
250
200
150
100
50
0
0
1
2
3
4
5
6
7
45
TJ = 25°C
fTEST = 1 MHz
40
35
30
25
20
15
10
5
0
0
8
10
20
30
40
50
60
70
80
VEB, EMITTER BASE VOLTAGE (V)
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
140
90 100
10
TJ = 25°C
fTEST = 1 MHz
VCE = 2 V
IC, COLLECTOR CURRENT (A)
fTau, CURRENT GAIN BANDWIDTH (MHz)
1A
0.01
0.001
120
3A
2A
100
80
60
40
20
0
10 mS
1 mS
100 mS
1
Thermal Limit
0.1
0.01
0.001
0.01
0.1
1
0.1
1
10
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
www.onsemi.com
4
100
NSS1C201L, NSV1C201L
1000
D = 0.5
R(t), (°C/W)
100
D = 0.2
D = 0.1
D = 0.05
10
D = 0.02
D = 0.01
1
0.1
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 14. Transient Thermal Resistnce
www.onsemi.com
5
1.0
10
100
1000
NSS1C201L, NSV1C201L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NSS1C201L/D
Similar pages