DMN2400UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability • • • • Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) D2 G1 S1 S2 G2 D1 SOT-563 Top View ESD PROTECTED TO 2kV Bottom View Top View Internal Schematic Ordering Information (Note 3) Part Number DMN2400UV-7 DMN2400UV-13 Notes: Case SOT-563 SOT-563 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information 24N Date Code Key Year Code Month Code 2009 W Jan 1 YM 2010 X Feb 2 DMN2400UV Document number: DS31852 Rev. 6 - 2 Mar 3 24N = Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D January 2011 © Diodes Incorporated DMN2400UV Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Steady State Symbol VDSS VGSS Value 20 ±12 Units V V ID 1.33 0.84 A IDM 3 A Value 530 233.8 -55 to +150 Units mW °C/W °C TA = 25°C TA = 85°C Pulsed Drain Current Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS 20 - - 100 ±1.0 ±50 V nA 0.5 - 0.3 0.35 0.45 0.55 0.65 1.4 0.9 0.48 0.5 0.7 0.9 1.5 - Ω 0.7 1.2 V 36.0 5.7 4.2 68 0.5 0.07 0.1 4.06 7.28 13.74 10.54 - pF pF pF Ω nC nC nC ns ns ns ns IGSS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance |Yfs| Diode Forward Voltage (Note 5) VSD DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf Notes: - μA V S Test Condition VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS = ±10V, VDS = 0V VDS = VGS, ID = 250μA VGS = 5.0V, ID = 200mA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VGS = 1.5V, ID = 50mA VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA, f = 1.0MHz VDS =16V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, VGS =4.5V, VDS = 10V, ID =250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA 4. Device soldered onto FR-4 PCB, minimum recommended soldering pad dimensions (25.4mm x 25.4mm x1.6mm, 2oz Cu pad: 0.18mm2 x 6). 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. DMN2400UV Document number: DS31852 Rev. 6 - 2 2 of 6 www.diodes.com January 2011 © Diodes Incorporated DMN2400UV 1.5 2.0 VGS = 4.5V 1.5 VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.5V VGS = 2.0V VGS = 1.8V 1.0 VGS = 1.5V 0.5 1.0 0.5 T A = 150°C TA = 125°C T A = 85°C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 5 1.6 VGS = 1.5V 0.8 VGS = 1.8V VGS = 2.5V 0.4 VGS = 5.0V 0 0 VGS = 4.5V 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 VGS = 4.5V ID = 1.0A VGS = 2.5.V ID = 500mA 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2400UV Document number: DS31852 Rev. 6 - 2 3 0.8 VGS = 4.5V 0.6 TA = 150°C T A = 125°C 0.4 TA = 85°C TA = 25°C 0.2 TA = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 1.4 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2.0 1.2 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 TA = 25°C TA = -55°C 3 of 6 www.diodes.com 0.4 0.8 1.2 1.6 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 0.2 VGS = 4.5V ID = 1.0A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature January 2011 © Diodes Incorporated DMN2400UV 1.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 IS, SOURCE CURRENT (A) 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 1.2 T A = 25°C 0.8 0.4 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature f = 1MHz 50 C, CAPACITANCE (pF) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 60 40 Ciss 30 20 10 Coss C rss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 20 TA = 150°C 100 T A = 125°C 10 T A = 85°C TA = -55°C 1 TA = 25°C 0.1 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage VGS, GATE-SOURCE VOLTAGE (V) 5 4 VDS = 10V ID = 250mA 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN2400UV Document number: DS31852 Rev. 6 - 2 0.6 4 of 6 www.diodes.com January 2011 © Diodes Incorporated DMN2400UV r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 221°C/W D = 0.02 0.01 D = 0.01 P(pk) D = Single Pulse 0.001 0.00001 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 /t2 D = 0.005 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions A B SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMN2400UV Document number: DS31852 Rev. 6 - 2 5 of 6 www.diodes.com January 2011 © Diodes Incorporated DMN2400UV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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