NEC MC-458CB64ESB 8m-word by 64-bit synchronous dynamic ram module so dimm Datasheet

DATA SHEET
MOS INTEGRATED CIRCUIT
MC-458CB64ESB, 458CB64PSB
8M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Description
The MC-458CB64ESB and MC-458CB64PSB are 8,388,608 words by 64 bits synchronous dynamic RAM module
(Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
• 8,388,608 words by 64 bits organization
• Clock frequency and access time from CLK
Part number
MC-458CB64ESB-A10B
★
MC-458CB64PSB-A10B
Clock frequency
(MAX.)
Access time from CLK
CL = 3
100 MHz
7 ns
CL = 2
67 MHz
8 ns
CL = 3
100 MHz
7 ns
CL = 2
67 MHz
8 ns
/CAS Latency
(MIN.)
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and Full Page)
• Programmable wrap sequence (Sequential / Interleave)
• Programmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• Single +3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination by Burst Stop command and Precharge command
• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
• Unbuffered type
• Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M12263EJAV0DS00 (10th edition)
Date Published February 2000 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1996
MC-458CB64ESB, 458CB64PSB
Ordering Information
Part number
Clock frequency
Package
Mounted devices
MHz (MAX.)
MC-458CB64ESB-A10B
100 MHz
144-pin Small Outline DIMM
4 pieces of µPD45128163G5 (Rev. E)
(Socket Type)
(10.16mm (400) TSOP (II))
Edge connector: Gold plated
★
MC-458CB64PSB-A10B
100 MHz
25.4 mm height
4 pieces of µPD45128163G5 (Rev. P)
(10.16mm (400) TSOP (II))
2
Data Sheet M12263EJAV0DS00
MC-458CB64ESB, 458CB64PSB
Pin Configuration
144-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated)
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
Vss
DQ 32
DQ 33
DQ 34
DQ 35
Vcc
DQ 36
DQ 37
DQ 38
DQ 39
Vss
DQMB4
DQMB5
Vcc
A3
A4
A5
Vss
DQ 40
DQ 41
DQ 42
DQ 43
Vcc
DQ 44
DQ 45
DQ 46
DQ 47
Vss
NC
NC
Vss
DQ 0
DQ 1
DQ 2
DQ 3
VCC
DQ 4
DQ 5
DQ 6
DQ 7
Vss
DQMB0
DQMB1
VCC
A0
A1
A2
Vss
DQ 8
DQ 9
DQ 10
DQ 11
VCC
DQ 12
DQ 13
DQ 14
DQ 15
Vss
NC
NC
CLK0
CKE0
Vcc
Vcc
/RAS
/CAS
/WE
NC
/CS0
NC
NC
NC
NC
CLK1
Vss
Vss
NC
NC
NC
NC
VCC
Vcc
DQ 16
DQ 48
DQ 17
DQ 49
DQ 18
DQ 50
DQ 19
DQ 51
Vss
Vss
DQ 20
DQ 52
DQ 21
DQ 53
DQ 22
DQ 54
DQ 23
DQ 55
Vcc
Vcc
A6
A7
A8
BA0 (A13)
Vss
Vss
A9
BA1 (A12)
A10
A11
Vcc
Vcc
DQMB2
DQMB6
DQMB3
DQMB7
Vss
Vss
DQ 24
DQ 56
DQ 25
DQ 57
DQ 26
DQ 58
DQ 27
DQ 59
VCC
Vcc
DQ 28
DQ 60
DQ 29
DQ 61
DQ 30
DQ 62
DQ 31
DQ 63
Vss
Vss
SDA
SCL
VCC
Vcc
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
95
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
Data Sheet M12263EJAV0DS00
/xxx indicates active low signal.
A0 - A11
: Address Inputs
[Row: A0 - A11, Column: A0 - A8]
BA0(A13), BA1(A12): SDRAM Bank Select
DQ0 - DQ63
: Data Inputs/Outputs
CLK0, CLK1
: Clock Input
CKE0
: Clock Enable Input
/CS0
: Chip Select Input
/RAS
: Row Address Strobe
/CAS
: Column Address Strobe
/WE
: Write Enable
DQMB0 - DQMB7 : DQ Mask Enable
SDA
: Serial Data I/O for PD
SCL
: Clock Input for PD
VCC
: Power Supply
VSS
: Ground
NC
: No Connection
3
MC-458CB64ESB, 458CB64PSB
★ Block Diagram
/WE
/CS0
LDQM
DQMB0
DQ 0
/CS
/WE
DQMB4
DQ 32
DQ 0
DQ 1
DQ 1
DQ 33
DQ 1
DQ 2
DQ 2
DQ 34
DQ 2
DQ 3
DQ 3
DQ 35
DQ 3
DQ 4
DQ 4
DQ 36
DQ 4
DQ 5
DQ 5
DQ 37
DQ 5
DQ 6
DQ 6
DQ 38
DQ 6
DQ 7
DQ 7
DQ 39
DQ 7
UDQM
D0
UDQM
DQMB1
DQ 8
DQ 15
DQMB5
DQ 40
DQ 9
DQ 14
DQ 41
DQ 14
DQ 10
DQ 13
DQ 42
DQ 13
DQ 11
DQ 12
DQ 43
DQ 12
DQ 12
DQ 11
DQ 44
DQ 11
DQ 13
DQ 10
DQ 45
DQ 10
DQ 14
DQ 9
DQ 46
DQ 9
DQ 15
DQ 8
DQ 47
DQ 8
DQMB2
DQ 16
DQ 7
DQMB6
DQ 48
DQ 7
DQ 17
DQ 6
DQ 49
DQ 6
DQ 18
DQ 5
DQ 50
DQ 5
DQ 19
DQ 4
DQ 51
DQ 4
DQ 20
DQ 3
DQ 52
DQ 3
DQ 21
DQ 2
DQ 53
DQ 2
DQ 22
DQ 1
DQ 54
DQ 1
DQ 23
DQ 0
DQ 55
DQ 0
LDQM
/CS
/WE
D1
UDQM
DQMB3
D2
/CS
LDQM
/WE
D3
UDQM
DQ 24
DQ 8
DQ 25
DQ 9
DQ 57
DQ 9
DQ 26
DQ 10
DQ 58
DQ 10
DQ 27
DQ 11
DQ 59
DQ 11
DQ 28
DQ 12
DQ 60
DQ 12
DQ 29
DQ 13
DQ 61
DQ 13
DQ 30
DQ 14
DQ 62
DQ 14
DQ 31
DQ 15
DQ 63
DQ 15
DQ 8
10 Ω
SERIAL PD
CLK0
SCL
SDA
A1
/WE
DQ 15
DQMB7
DQ 56
A0
/CS
LDQM
DQ 0
CLK : D0, D2
CLK : D1, D3
A2
CLK1
10pF
A0 - A11 : D0 - D3
/RAS
BA0
A13 : D0 - D3
/CAS
/CAS : D0 - D3
BA1
A12 : D0 - D3
CKE0
CKE : D0 - D3
A0 - A11
VCC
D0 - D3
C
VSS
D0 - D3
Remark D0 - D3: µPD45128163 (2M words × 16 bits × 4 banks)
4
Data Sheet M12263EJAV0DS00
/RAS : D0 - D3
MC-458CB64ESB, 458CB64PSB
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
VCC
–0.5 to +4.6
V
Voltage on input pin relative to GND
VT
–0.5 to +4.6
V
Short circuit output current
IO
50
mA
Power dissipation
PD
4
W
Operating ambient temperature
TA
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
3.3
3.6
V
Supply voltage
VCC
3.0
High level input voltage
VIH
2.0
VCC + 0.3
V
Low level input voltage
VIL
–0.3
+ 0.8
V
Operating ambient temperature
TA
0
70
°C
MAX.
Unit
pF
Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Input capacitance
Data input/output capacitance
Symbol
Test condition
CI1
A0 - A11, BA0 (A13), BA1 (A12),
/RAS, /CAS, /WE
30
CI2
CLK0
30
CI3
CKE0
30
CI4
/CS0
30
CI5
DQMB0 -DQMB7
10
CI/O
DQ0 - DQ63
10
Data Sheet M12263EJAV0DS00
MIN.
TYP.
pF
5
MC-458CB64ESB, 458CB64PSB
DC Characteristics (Recommended Operating Conditions unless otherwise noted)
Parameter
Operating current
Precharge standby current
★
in power down mode
Precharge standby current
Symbol
ICC1
ICC2P
ICC2PS
ICC2N
in non power down mode
power down mode
Active standby current in
ICC3P
ICC3PS
ICC3N
non power down mode
Notes
mA
1
/CAS latency = 2
440
IO = 0 mA
/CAS latency = 3
440
CKE ≤ VIL(MAX.), tCK = 15 ns
4
CKE ≤
4
VIL(MAX.), tCK = ∞
CKE ≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),
80
CKE ≥ VIH(MIN.), tCK = ∞, Input signals are stable.
32
CKE ≤ VIL(MAX.), tCK = 15 ns
20
CKE ≤ VIL(MAX.), tCK = ∞
16
CKE ≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),
120
ICC4
CKE ≥ VIH(MIN.), tCK = ∞, Input signals are stable.
80
tCK ≥ tCK(MIN.) , IO = 0 mA
/CAS latency = 2
400
/CAS latency = 3
560
ICC5
/CAS latency = 2
880
/CAS latency = 3
880
tRC ≥ tRC(MIN.)
ICC6
CKE ≤ 0.2 V
Input leakage current
II(L)
VI = 0 to 3.6 V, All other pins not under test = 0 V
Output leakage current
IO(L)
DOUT is disabled, VO = 0 to 3.6 V
High level output voltage
VOH
IO = – 4.0 mA
Low level output voltage
VOL
IO = + 4.0 mA
Self refresh current
Unit
Burst length = 1, tRC ≥ tRC(MIN.)
(Burst mode)
CBR (Auto) refresh current
MAX.
mA
mA
mA
mA
Input signals are changed one time during 30 ns.
ICC3NS
Operating current
MIN.
Input signals are changed one time during 30 ns.
ICC2NS
Active standby current in
Test condition
mA
2
mA
3
8
mA
–4
+4
µA
– 1.5
+ 1.5
µA
2.4
V
0.4
V
Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK(MIN.).
2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK(MIN.).
3. ICC5 is measured on condition that addresses are changed only one time during tCK(MIN.).
6
Data Sheet M12263EJAV0DS00
MC-458CB64ESB, 458CB64PSB
AC Characteristics (Recommended Operating Conditions unless otherwise noted)
★ Test Conditions
Parameter
AC high level input voltage / low level input voltage
Input timing measurement reference level
Value
Unit
2.4 / 0.4
V
1.4
V
1
ns
1.4
V
Transition time (Input rise and fall time)
Output timing measurement reference level
tCK
tCH
CLK
tCL
2.4 V
1.4 V
0.4 V
tSETUP tHOLD
Input
2.4 V
1.4 V
0.4 V
tAC
tOH
Output
Data Sheet M12263EJAV0DS00
7
MC-458CB64ESB, 458CB64PSB
Synchronous Characteristics
Parameter
Symbol
-A10B
MIN.
Clock cycle time
Access time from CLK
Unit
MAX.
/CAS latency = 3
tCK3
10
ns
/CAS latency = 2
tCK2
15
ns
/CAS latency = 3
tAC3
7
ns
1
/CAS latency = 2
tAC2
8
ns
1
CLK high level width
tCH
3.5
ns
CLK low level width
tCL
3.5
ns
Data-out hold time
tOH
3
ns
Data-out low-impedance time
tLZ
0
ns
/CAS latency = 3
tHZ3
3
7
ns
/CAS latency = 2
tHZ2
3
8
ns
Data-in setup time
tDS
2.5
ns
Data-in hold time
tDH
1
ns
Address setup time
tAS
2.5
ns
Address hold time
tAH
1
ns
CKE setup time
tCKS
2.5
ns
CKE hold time
tCKH
1
ns
CKE setup time (Power down exit)
tCKSP
2.5
ns
Command (/CS0, /RAS, /CAS, /WE,
tCMS
2.5
ns
tCMH
1
ns
Data-out high-impedance time
DQMB0 - DQMB7) setup time
Command (/CS0, /RAS, /CAS, /WE,
DQMB0 - DQMB7) hold time
Note 1. Output load
Z = 50 Ω
Output
50 pF
8
Note
Data Sheet M12263EJAV0DS00
1
MC-458CB64ESB, 458CB64PSB
Asynchronous Characteristics
Parameter
Symbol
-A10B
MIN.
Unit
MAX.
REF to REF/ACT command period
tRC
90
ACT to PRE command period
tRAS
60
PRE to ACT command period
tRP
30
ns
Delay time ACT to READ/WRITE command
tRCD
30
ns
ACT(0) to ACT(1) command period
tRRD
20
ns
Data-in to PRE command period
tDPL
10
ns
Data-in to ACT(REF) command /CAS latency = 3
tDAL3
1CLK+30
ns
period (Auto precharge)
tDAL2
1CLK+30
ns
tRSC
2
CLK
tT
1
/CAS latency = 2
Mode register set cycle time
Transition time
Refresh time (4,096 refresh cycles)
tREF
Data Sheet M12263EJAV0DS00
Note
ns
120,000
ns
30
ns
64
ms
9
MC-458CB64ESB, 458CB64PSB
★ Serial PD
(1/2)
Byte No.
Function Described
Hex
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Notes
0
Defines the number of bytes written into
serial PD memory
80H
1
0
0
0
0
0
0
0
128 bytes
1
Total number of bytes of serial PD memory
08H
0
0
0
0
1
0
0
0
256 bytes
2
Fundamental memory type
04H
0
0
0
0
0
1
0
0
SDRAM
3
Number of rows
0CH
0
0
0
0
1
1
0
0
12 rows
4
Number of columns
09H
0
0
0
0
1
0
0
1
9 columns
5
Number of banks
01H
0
0
0
0
0
0
0
1
1 bank
6
Data width
40H
0
1
0
0
0
0
0
0
64 bits
7
Data width (continued)
00H
0
0
0
0
0
0
0
0
0
8
Voltage interface
01H
0
0
0
0
0
0
0
1
LVTTL
9
CL = 3 Cycle time
-A10B A0H
1
0
1
0
0
0
0
0
10 ns
10
CL =3 Access time
-A10B
70H
0
1
1
1
0
0
0
0
7 ns
11
DIMM configuration type
00H
0
0
0
0
0
0
0
0
Non-parity
12
Refresh rate/type
80H
1
0
0
0
0
0
0
0
Normal
13
SDRAM width
10H
0
0
0
1
0
0
0
0
×16
14
Error checking SDRAM width
00H
0
0
0
0
0
0
0
0
None
15
Minimum clock delay
01H
0
0
0
0
0
0
0
1
1 clock
16
Burst length supported
8FH
1
0
0
0
1
1
1
1
1, 2, 4, 8, F
17
Number of banks on each SDRAM
04H
0
0
0
0
0
1
0
0
4 banks
18
/CAS latency supported
06H
0
0
0
0
0
1
1
0
2, 3
19
/CS latency supported
01H
0
0
0
0
0
0
0
1
0
20
/WE latency supported
01H
0
0
0
0
0
0
0
1
0
21
SDRAM module attributes
00H
0
0
0
0
0
0
0
0
22
SDRAM device attributes: General
0EH
0
0
0
0
1
1
1
0
23
CL = 2 Cycle time
-A10B F0H
1
1
1
1
0
0
0
0
15 ns
24
CL = 2 Access time
-A10B
80H
1
0
0
0
0
0
0
0
8 ns
00H
0
0
0
0
0
0
0
0
25-26
10
27
tRP(MIN.)
-A10B 1EH
0
0
0
1
1
1
1
0
30 ns
28
tRRD(MIN.)
-A10B
14H
0
0
0
1
0
1
0
0
20 ns
29
tRCD(MIN.)
-A10B 1EH
0
0
0
1
1
1
1
0
30 ns
30
tRAS(MIN.)
-A10B 3CH
0
0
1
1
1
1
0
0
60 ns
Data Sheet M12263EJAV0DS00
MC-458CB64ESB, 458CB64PSB
(2/2)
Byte No.
Function Described
Hex
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Notes
31
Module bank density
10H
0
0
0
1
0
0
0
0
64 M bytes
32
Command and address signal setup -A10B
time
25H
0
0
1
0
0
1
0
1
2.5 ns
33
Command and address signal hold
time
-A10B
10H
0
0
0
1
0
0
0
0
1 ns
34
Data signal input setup time
-A10B
25H
0
0
1
0
0
1
0
1
2.5 ns
35
Data signal input hold time
-A10B
10H
0
0
0
1
0
0
0
0
1 ns
00H
0
0
0
0
0
0
0
0
62
SPD revision
-A10B
12H
0
0
0
1
0
0
1
0
63
Checksum for bytes 0 – 62
B5H
1
0
1
1
0
1
0
1
36-61
64-71
72
1.2
Manufacture’s JEDEC ID code
Manufacturing location
73-90
Manufacture’s P/N
91-92
Revision code
93-94
Manufacturing date
95-98
Assembly serial number
99-125 Mfg specific
126
Intel specification frequency
-A10B
66H
0
1
1
0
0
1
1
0
127
Intel specification /CAS latency
support
-A10B
06H
0
0
0
0
0
1
1
0
66 MHz
Timing Chart
Refer to the SYNCHRONOUS DRAM MODULE TIMING CHART Information (M13348E).
Data Sheet M12263EJAV0DS00
11
MC-458CB64ESB, 458CB64PSB
★ Package Drawing
144 PIN DUAL IN-LINE MODULE (SOCKET TYPE)
A (AREA B)
Y
M1 (AREA B)
R
N
Q
M
L
M2 (AREA A)
H
S
A
(OPTIONAL HOLES)
U1
U2
C
I
B
T
E
D
A1 (AREA A)
F
ITEM
A
detail of A part
W
D2
D1
X
V
MILLIMETERS
67.6
A1
67.6±0.15
B
23.2
C
29.0
D
4.6
D1
1.5±0.10
D2
4.0
E
32.8
F
3.7
H
0.8(T.P.)
I
3.3
L
20.0
M
25.4±0.15
M1
3.4
M2
22.0
N
3.8 MAX.
Q
R2.0
R
4.0±0.10
S
φ 1.8
T
1.0±0.1
U1
3.2 MIN.
U2
4.0 MIN.
V
0.25 MAX.
W
0.6±0.05
Y
2.0 MIN.
M144S-80A10
12
Data Sheet M12263EJAV0DS00
MC-458CB64ESB, 458CB64PSB
[MEMO]
Data Sheet M12263EJAV0DS00
13
MC-458CB64ESB, 458CB64PSB
[MEMO]
14
Data Sheet M12263EJAV0DS00
MC-458CB64ESB, 458CB64PSB
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Data Sheet M12263EJAV0DS00
15
MC-458CB64ESB, 458CB64PSB
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory IC, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these
components to prevent damaging them.
When re-packing memory modules, be sure the modules are NOT touching each other. Modules in contact
with other modules may cause excessive mechanical stress, which may damage the modules.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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