NEC NDL7513P Ingaasp mqw dc-pbh pulsed laser diode module 1 310 nm otdr application Datasheet

DATA SHEET
LASER DIODE
NDL7515P Series
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE
1 310 nm OTDR APPLICATION
DESCRIPTION
The NDL7515P Series is a 1 310 nm newly developed Multiple Quantum Well (MQW) structure pulsed laser diode
module with single mode fiber. It is designed for light source of optical measurement equipment (OTDR).
FEATURES
•
Output power
Pf = 20 mW MIN.@IFP = 400 mA, TC = 25 °C
•
Long wavelength
λC = 1 310 nm
•
Coaxial module without thermoelectric cooler
•
Single mode fiber pigtail
*1
*1 Pulse conditions: Pulse width (PW) = 10 µs, Duty = 1 %
PACKAGE DIMENSIONS
in millimeters
NDL7515P
Optical Fiber
SM-9/125
Length : 1 m
NDL7515P1
Optical Fiber
SM-9/125
Length : 1 m
φ 0.9
φ 0.9
φ7
25
2
4
25
2 – φ 2.2
φ7
φ6
3
1
2
1
2
3.7
7.2
PIN CONNECTIONS
P.C.D. = φ 2 4
1
3
2
φ7
φ6
12.7
17.0
PIN CONNECTIONS
P.C.D. = φ 2 4
1
φ 0.45
20
20
φ 0.45
LD
CASE
1
2
LD
CASE
The information in this document is subject to change without notice.
Document No. P11619EJ3V0DS00 (3rd edition)
Date Published December 1996 N
Printed in Japan
The mark • shows major revised points.
©
1996
NDL7515P Series
ORDERING INFORMATION
Part Number
Available Connector
FIange Type
NDL7515P
Without Connector
No Flange
NDL7515PC
With FC-PC Connector
NDL7515P1
Without Connector
NDL7515P1C
With FC-PC Connector
Flat Mount Flange
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)
Parameter
Pulsed Forward Current
*1
Symbol
Ratings
Unit
IFP
600
mA
Reverse Voltage of LD
VR
2.0
V
Operating Case Temperature
TC
−20 to +60
°C
Storage Temperature
Tstg
−40 to +85
°C
Lead Soldering Temperature (10 s)
Tsld
260
°C
*1 Pulse conditions: Pulse width (PW) = 10 µs, Duty = 1 %
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C)
Parameter
Forward Voltage
Symbol
VFP
Conditions
MIN.
IFP = 400 mA,
PW = 10 µs, Duty = 1 %
Threshold Current
Ith
Optical Output Power from Fiber
Pf
IFP = 400 mA,
PW = 10 µs, Duty = 1 %
Center Wavelength
λC
IFP = 400 mA, PW = 10 µs,
Duty = 1 %, RMS (−20 dB)
Spectral Width
σ
Rise Time
Fall Time
TYP.
MAX.
Unit
2.5
4.0
V
20
30
mA
20
30
1 290
1 310
mW
1 330
nm
IFP = 400 mA, PW = 10 µs,
Duty = 1 %, RMS (−20 dB)
10
nm
tr
10 to 90 %
1.0
ns
tf
90 to 10 %
1.0
ns
MAX.
Unit
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +60°°C)
Parameter
Conditions
Threshold Current
Ith
Optical Output Power from Fiber
Pf
IFP = 400 mA,
PW = 10 µs, Duty = 1 %
Center Wavelength
λC
IFP = 400 mA, PW = 10 µs,
Duty = 1 %, RMS (−20 dB)
Temperature Dependence of
Center Wavelength
Spectral Width
2
Symbol
TYP.
50
∆λ/∆T
σ
MIN.
10
1 280
1 342.5
0.35
IFP = 400 mA, PW = 10 µs,
Duty = 1 %, RMS (−20 dB)
mA
mW
nm
nm/°C
10
nm
NDL7515P Series
TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)
OPTICAL OUTPUT POWER FROM FIBER vs.
LD PULSED FORWARD CURRENT
LONGITUDINAL MODE (FROM FIBER)
30
PW = 10 µ s
Duty = 1 %
25
Relative Intensity (Linear Scale)
Optical Output Power from Fiber Pf (mW)
•
TC = 25 ˚C
20
15
TC = 60 ˚C
10
5
0
100
300
200
Pulsed Forward Current IFP (mA)
400
1 310
5 nm/div
Wavelength λ (nm)
3
NDL7515P Series
• LASER DIODE FAMILY FOR OTDR APPLICATION
1.31 µm
Features
Part Number
Packages
φ 5.6 Can
4-pin Coaxial Module with
SMF
14-pin DIP Module with SMF
*1 Pulse conditions:
1.55 µm
P (mW)
MIN./TYP.
Part Number
(mA)
NDL7103
290/320
NDL7153
220/240
1 000
NDL7113
160/175
NDL7163
100/120
400
NDL7503P/P1
110/180
NDL7553P/P1
95/145
1 000
NDL7513P/P1
70/110
NDL7563P/P1
60/80
400
NDL7514P/P1
25/50
NDL7564P/P1
20/40
400
NDL7515P/P1
20/30
NDL7565P/P1
8/11
400
NDL7502P
125/190
NDL7552P
100/125
1 000
NDL7512P
90/110
NDL7562P
70/80
400
NDL7510P
40/55
NDL7560P
20/30
400
Pulse width = 10 µs, Duty = 1 % (modules)
Pulse width = 1 µs, Duty = 1 % (φ 5.6 can)
4
IFP*1
P (mW)
MIN./TYP.
Remarks
P : No flange
P1 : With flange
With TEC and
Thermistor
NDL7515P Series
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
LEI-1201
Quality grades on NEC semiconductor devices
C11531E
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
5
NDL7515P Series
[MEMO]
6
NDL7515P Series
[MEMO]
7
NDL7515P Series
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEC Corporation
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
NEC Building, 7-1, Shiba 5-chome,
Minato-ku, Tokyo 108-01, Japan
Type number:
Manufactured:
Serial Number:
This product conforms to FDA
regulations as applicable
to standards 21 CFR Chapter 1.
Subchapter J.
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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