Eudyna FLL810IQ-3C L-band high power gaas fet Datasheet

FLL810IQ-3C
L-Band High Power GaAs FET
FEATURES
•
•
•
•
•
•
Push-Pull Configuration
High Power Output: 80W
High PAE: 50%.
Excellent Linearity
Suitable for class AB operation.
Hermetically Sealed Package
DESCRIPTION
The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.
This device offers excellent linearity, ease of matching, and greater consistency
in covering the frequency band of 2.5 to 2.7 GHz. This new product is uniquely
suited for use in MMDS applications as it offers high gain, long term reliability
and ease of use.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
136
W
Tc = 25°C
Total Power Dissipation
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
+175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
gate resistance of 5Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Drain Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Symbol
IDSS
Vp
VGSO
Output Power
Pout
Linear Gain (Note 1)
GL
Power-Added Efficiency
ηadd
Drain Current
IDSR
Thermal Resistance
Rth
Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 220mA
IGS = -2.2mA
VDS = 12V
f = 2.6 GHz
IDS = 5.0A
Pin = 40.0dBm
Channel to Case
CASE STYLE: IQ
Note 1: The condition for GL is the same as Pout except Pin = 25.0dBm.
Edition 1.1
October 2001
1
Min.
Limits
Typ. Max.
Unit
-
8
-
A
-0.1
-0.3
-0.5
V
-5
-
-
V
48.0
49.0
-
dBm
11.0
12.0
-
dB
-
50
-
%
-
11.5
15.0
A
-
0.8
1.1
°C/W
FLL810IQ-3C
L-Band High Power GaAs FET
IMD & IDS(RF) vs. TOTAL OUTPUT POWER
OUTPUT POWER vs. FREQUENCY
39dBm
7
6
34dBm
IDS(RF)
44
-30
42
5
IM3
IMD (dBc)
30dBm
40
38
26dBm
36
34
22dBm
2.4
2.5
2.7
2.6
-40
-50
3
-60
2
2.8
Frequency (GHz)
34
36
38
40
42
Total Output Power (dBm)
OUTPUT POWER & ηadd vs. INPUT POWER
50
48
VDS = 12V
IDS = 5A
46
44
Pout
42
60
40
50
38
40
ηadd
36
30
34
20
32
10
30
0
22
4
IM5
24
26
28
30
32
34
Input Power (dBm)
2
36
38
40
44
IDS(RF) (A)
46
Output Power (dBm)
Output Power (dBm)
48
8
VDS = 12V
IDS = 5A
fo = 2.6GHz
f1 = 2.61GHz
ηadd (%)
50
VDS = 12V
IDS = 5A
FLL810IQ-3C
L-Band High Power GaAs FET
FREQUENCY
(MHZ)
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
MAG
ANG
S-PARAMETERS
VDS = 12V, IDS = 2500mA
S21
S12
MAG
ANG
MAG
ANG
.856
.786
.698
.579
.455
.347
.247
.141
.200
.425
.634
.738
.750
.693
.620
.601
.713
.804
.863
.895
.909
137.9
131.5
124.7
118.4
115.3
115.2
119.8
142.0
-160.2
-159.8
-179.2
156.5
129.4
94.5
48.8
0.2
-39.5
-68.6
-89.7
-104.3
-115.6
1.167
1.430
1.722
2.020
2.323
2.564
2.784
3.064
3.418
3.446
3.332
2.845
2.436
2.125
1.618
1.345
1.031
.748
.587
.420
.335
S11
39.2
25.6
10.3
-8.0
-27.7
-48.5
-67.9
-90.1
-114.9
-143.7
-173.7
161.4
134.5
113.9
89.3
67.3
50.9
31.0
19.4
9.2
0.5
.021
.026
.029
.034
.036
.039
.041
.041
.039
.035
.029
.024
.023
.020
.020
.019
.017
.014
.015
.014
.009
43.0
31.2
15.8
0.9
-16.4
-39.5
-59.6
-84.9
-114.5
-150.5
170.0
122.6
84.7
47.3
12.3
-15.0
-35.8
-60.2
-70.4
-85.8
-96.7
S22
MAG
ANG
.841
.805
.790
.777
.795
.818
.819
.781
.668
.560
.556
.659
.747
.822
.879
.910
.931
.922
.936
.936
.951
167.3
167.9
169.2
170.2
171.0
169.7
167.1
163.5
162.4
170.4
-175.3
-168.5
-168.5
-170.0
-172.2
-175.1
-177.6
-179.8
178.2
176.2
174.2
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
Download S-Parameters, click here
3
FLL810IQ-3C
L-Band High Power GaAs FET
Case Style "IQ"
2.5 MIN.
24±0.35
20.4±0.2
2
1
2.4±0.15
4-0.1
15.5±0.2
3
8.0±0.15
6
4-2.6±0.2
17.4±0.2
45°
4-R1.3±0.2
2.5 MIN.
4-2.0
5
4
6.0
1, 2: Gate
3: Source
4, 5: Drain
Unit: mm (inches)
1.9±0.2
5.5 Max.
14.9±0.2
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI05019M200
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